発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"石原宏,丸山　研二,川嶋　将一郎,鉾　宏真","強誘電体メモリ","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2008/03/25","特願2008-078090","2009/10/08","特開2009-230835",,
"石原宏,丸山　研二,川嶋　将一郎,鉾　宏真","強誘電体メモリセルおよび強誘電体メモリ","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2008/03/25","特願2008-078089","2009/10/08","特開2009-230834",,
"石原宏,スシル　クマル　シン,鉾　宏真,杉山　芳弘","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2008/03/18","特願2008-069338","2009/10/01","特開2009-224668",,
"石原宏,スシル　クマル　シン,丸山　研二,近藤　正雄","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2007/03/30","特願2007-092413","2008/10/16","特開2008-251907",,
"石原宏,スシル　クマル　シン,丸山　研二,近藤　正雄","半導体装置及びその製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2006/09/19","特願2006-253569","2008/04/03","特開2008-078248",,
"石原宏,丸山　研二,田村　哲朗,鉾　宏真","半導体素子及びそれを用いた半導体記憶装置、及びそのデータ書込み方法、データ読出し方法、及びそれらの製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2006/08/25","特願2006-229896","2007/08/23","特開2007-214532",,
"石原宏,Singh Kumar Sushil,丸山　研二,近藤　正雄,佐藤　桂輔","半導体装置および半導体装置の製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2006/02/20","特願2006-042921","2007/08/30","特開2007-221066",,
"石原宏,會澤康治,青木　千恵子,鉾　宏真,田村　哲朗,丸山　研二","強誘電体キャパシタ、強誘電体メモリ、及びそれらの製造方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2005/10/18","特願2005-302611","2007/05/10","特開2007-115733",,
"石原宏,田渕　良志明,高橋　憲弘,長谷川　聡志,會澤康治,有本　由弘,田村　哲朗,鉾　宏真,山口　正臣,奈良　安雄","強誘電体メモリ、多値データ記録方法、および多値データ読出し方法","特許","公開","国立大学法人東京工業大学, 富士通株式会社","2005/08/31","特願2005-252504","2006/04/20","特開2006-108648",,