発明者,発明の名称,種別,状態,出願人,出願日,出願番号,公開日,公開番号,登録日,登録番号
"松本祐司,石井　誉,鯉沼　秀臣","酸化亜鉛単結晶基板の製造方法","特許","公開","国立大学法人東京工業大学, 株式会社信光社, 独立行政法人科学技術振興機構","2008/04/03","特願2008-096734","2009/10/29","特開2009-249208",,
"松本祐司,石井　誉,鯉沼　秀臣","薄膜基板の製造方法","特許","公開","国立大学法人東京工業大学, 株式会社信光社, 独立行政法人科学技術振興機構","2006/03/17","特願2006-073731","2007/09/27","特開2007-246354",,
"鯉沼秀臣,松本祐司,片山　正士","二酸化チタンを活性層として用いる半導体装置およびその製造方法","特許","公開","国立大学法人東京工業大学, 独立行政法人科学技術振興機構","2006/02/23","特願2007-510338","2006/10/05","特再表2006-103853",,
"鯉沼秀臣,松本祐司,高橋　竜太","金属酸化物単結晶基板表面の平坦化方法及び金属酸化物単結晶基板","特許","公開","国立大学法人東京工業大学","2005/03/28","特願2005-091840","2006/04/13","特開2006-096649",,
"鯉沼秀臣,松本祐司,生澤　正克,矢作　政隆","低抵抗率透明導電体","特許","公開","国立大学法人東京工業大学, 株式会社日鉱マテリアルズ","2004/11/19","特願2004-335340","2006/06/08","特開2006-147325",,
"鯉沼秀臣,松本祐司,伊高　健治,片山　正士","成膜装置用マルチソース機構","特許","公開","国立大学法人東京工業大学, 独立行政法人科学技術振興機構","2004/08/30","特願2004-251150","2006/03/09","特開2006-063432",,
"鯉沼秀臣,松本祐司,伊高　健治,片山　正士","マスキング機構及びそれを備えた成膜装置","特許","公開","国立大学法人東京工業大学, 独立行政法人科学技術振興機構","2004/08/30","特願2004-251151","2006/03/09","特開2006-063433",,