Double-polysilicon self-aligned HBT with non-selective epitaxial SiGe:C base layer
著者
和文:
T. Yamazaki,
S. Ohmi,
M. Sakuraba,
J. Murota,
T. Sakai.
英文:
T. Yamazaki,
S. Ohmi,
M. Sakuraba,
J. Murota,
T. Sakai.
言語
English
掲載誌/書名
和文:
英文:
Second International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices