Double-Polysilicon self-aligned HBT with non-selective epitaxial SiGe:C base layer
著者
和文:
T.Yamazaki,
S.Ohmi,
M. Sakuraba,
J. Murota,
T. Sakai.
英文:
T.Yamazaki,
S.Ohmi,
M. Sakuraba,
J. Murota,
T. Sakai.
言語
English
掲載誌/書名
和文:
英文:
Second International Workshop on New Group Ⅳ(Si‐Ge‐C)Semiconductors: Control of Properties and Applications to Ultra-high Speed and Opto‐Electronics Devices