Transactions of the Japan Society of Mechanical Engineers. C
巻, 号, ページ
Vol. 74
No. 743
pp. 1740-1748
出版年月
2008年7月
出版者
和文:
社団法人日本機械学会
英文:
会議名称
和文:
英文:
開催地
和文:
英文:
アブストラクト
For photolithography in semiconductor manufacturing, the precise temperature control of a wafer has been demanded to realize a more fine device and high yield in recent years. However, it is difficult to achieve the precise temperature control by current hot and cooling plates, because those plates cannot measure wafer temperature during actual processing, which will cause thermal budget error because of the warp of each wafer and the temperature change of those chambers. For that reason, we propose an in-situ measurement and control method of wafer temperature based on micro area contact to a processing wafer using some micro sensors. The micro sensor consists of the resistance temperature detector (RTD) of a platinum membrane type, a thermal insulation substrate with air cavity, and a micro-bellows. In this paper, the large model of the micro sensor was prototyped for an experimental study. Experimental results illustrate the effectiveness of the proposed method, in-situ measurement accuracy 0.1 degrees centigrade, and 25% reduction of settling time by in-situ feedback control.
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