15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
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Tokyo, Japan
アブストラクト
The noise power spectral density of the mesoscopic devices was measured at low temperatures with two homemade systems
for low- and high-frequency ranges. By measuring the noise of the devices at finite bias voltages in the lowfreqiency
setup, we estimated a typical cut-off frequency to avoid the 1/f noise. We developed a high-frequency measurement
system with an cryogenic amplifier and a resonant circuit and calibrated it by measuring the Johnson-Nyquist noise. We compare these two systems and discuss the advantage of the high-frequency measurement system.
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