IEEE 21th Conference on Indium Phosphide and Related Materials
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Newport Beach, California, America
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We propose a vertical InGaAs MOSFET with hetero-launcher and undoped channel. In a previous trial ofthis particular MISFET innovation, the number of devices that achieved current modulation by gate bias wasonly 10% of the total number of the fabricated devices. This poor result was caused by loss of thickness ofthe gate dielectric. In the new version of this device, the gate stuck was fabricated by successive depositionsof SiO2 and gate metal. The number of devices achieving current modulation by gate bias now increased to50% of the total number of the fabricated devices. Moreover, the drain current density was observed toincrease from 100 mA/mm to 270 mA/mm .
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