In this report, we describe vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel. In
the conventional structure, the number of the device which could be observed the modulation of drain current by
gate bias was only about 10 %. Thus, we proposed a new structure whose mesa was covered by the stuck of gate
insulator and gate metal. In the new structure, the number of the device which could be observed the modulation
of drain current by gate bias was increased from about 10 % to 50 %. Moreover, the drivability of the device was
also increased. The drain current density was increased from 100 mA/mm to 400 mA/mm, and transconductance
was increased from 130 mS/mm to 300 mS/mm.
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