In-plane and out-of-plane lattice parameters of epitaxial yttria-stabilized zirconia (YSZ) thin films deposited on (001)Si substrates by pulsed laser deposition (PLD) were determined by XRD reciprocal-space-mapping method. Residual stress was calculated by these lattice parameters and controlled by the annealing at the various temperatures. Deposited YSZ films showed the compressive stress along with the substrates. By the annealing, the residual stress of the films gradually changed to tensile.
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