Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition
巻, 号, ページ
pp. 398-403
出版年月
2009年9月
出版者
和文:
英文:
会議名称
和文:
英文:
The 24th European Photovoltaic Solar Energy Conference and Exhibition
開催地
和文:
英文:
Hamburg, Germany
アブストラクト
It was found that the dark conductivity of a stoichiometric a-SiC thin film, which is used as barrier
layers in a Si quantum dots superlattice (Si-QDSL), increased drastically after thermal annealing above 800 oC. This
is due to the crystallization of an a-SiC phase in the films. To resolve this problem, N2 gas was introduced during the
deposition of stoichiometric a-SiC thin films. As a result, the dark conductivity of the films annealed at either 900 or
1000 oC was reduced below 10-9 S/cm, since the introduction of nitrogen atoms into the films prevented the a-SiC
phase from crystallizing during the annealing. N-containing Si-QDSLs were prepared and the dark conductivity was
measured. The dark conductivity of the N-containing Si-QDSLs was in the range of 10-6 to 10-8 S/cm, suggesting that
the Si-QDSLs got close to intrinsic. The solar cell structure using a N-containing Si-QDSL as a light absorption layer
was fabricated. The open circuit voltage and short circuit current were improved compared with the Si-QDSL
without the introduction of nitrogen atoms. The quantum efficiency data indicated that the absorption edge was
shifted to higher energy as the diameter of Si-QDs decreases, suggesting the quantum size effect.
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