We report on a Schottky junction fabricated on O-polar ZnO surfaces with a silane-coupling agent as a protective layer, and a conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as a deep work function metal electrode, simply by using wet processes. The silane-coupling agent prevented the O-polar ZnO surface from an etching reaction in contact with the acidic PEDOT:PSS solution, resulting in a good rectification with a current rectification ratio of 107 at +/- 1 V. The junction characteristics were systematically controlled in accord with the electron density in ZnO ranging from 8 X 10, 4 to 4 X 10SUP>16 cm-3.
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