Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy
Recombination dynamics of excitons in Mg0.11Zn0.89O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMgO4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 mu J/cm(2) was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.
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