We present never semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By develop ing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10(-3) Ohmm to 10(4) Ohm cm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.
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