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タイトル
和文: 
英文:Surface Modification of Si Wafer by Low-Pressure High-Frequency Plasma Chemical Vapor Deposition Method 
著者
和文: 湯地 敏史, Mungkung Narong, Yuichi Kiyota, Daishiro Uesugi, Minobu Kawano, Kenichi Nakabayashi, Hisaaki Kataoka, 須崎 嘉文, Nobuki Kashihara, 赤塚 洋.  
英文: Toshifumi Yuji, Narong Mungkung, Yuichi Kiyota, Daishiro Uesugi, Minobu Kawano, Kenichi Nakabayashi, Hisaaki Kataoka, Yoshifumi Suzaki, Nobuki Kashihara, Hiroshi Akatsuka.  
言語 English 
掲載誌/書名
和文: 
英文:IEEE Trans. Plasma Sci. 
巻, 号, ページ Vol. 39    No. 6    pp. 1427-1431
出版年月 2011年6月10日 
出版者
和文: 
英文:IEEE 
会議名称
和文: 
英文: 
開催地
和文: 
英文: 
公式リンク http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=5762638
 
DOI https://doi.org/10.1109/TPS.2011.2140383
アブストラクト In recent years, a flexible type of solar cell that can maintain various shape changes and that is applicable to virtually all products has attracted global attention. In the present research, we describe equipment for the production of thin-film material for flexible type solar cells that uses a high-frequency plasma chemical vapor deposition (CVD) method. This equipment is now at the development stage, and in order to clarify the cardinal trait of the plasma, we performed a plasma treatment on the surface of a Si wafer. Using X-ray photoelectron spectroscopy and contact angle meter measurements, we identified one index that clarifies the simple cardinal trait of plasma CVD.

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