Low-loss amorphous-silicon (a-Si) waveguides comprising three vertically stacked layers prepared onsilicon-on-insulator substrates are demonstrated. All the process temperatures were regulated below 400°C for theCMOS backend process compatibility. The measured propagation loss was 3.7 dB/cm even in the case of the 3rd layera-Si waveguide.
各種検索
サポート
ヘルプ