The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown
by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI)
multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with
out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the
[001] direction with the in-plane epitaxial relation of CFG[100]kGOI[100], although the film
slightly contained a non-epitaxial component. The strong (111) and (200) superlattice diffraction
intensities indicated that the CFG film had a high degree of order for the L21 structure.
Cross-sectional high-resolution transmission electron microscopy images of the film revealed that
the film had dominant epitaxial and slight non-epitaxial components, which was consistent with
the XRD measurements. The epitaxial component was grown directly on the buried oxide layer of
the SOI substrate without formation of any interfacial layer.
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