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タイトル
和文: 
英文:Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells 
著者
和文: Taweewat Krajangsang, 檜座 秀一, 林 輝明, Ihsanul Afdi Yunaz1, HONGSINGTHONG A, 宮島 晋介, 小長井 誠.  
英文: Taweewat Krajangsang, Shuichi Hiza, Teruaki Hayashi, Ihsanul Afdi Yunaz1, Aswin Hongsingthong, Shinsuke Miyajima, Makoto Konagai.  
言語 English 
掲載誌/書名
和文: 
英文: 
巻, 号, ページ Vol. 51        pp. 051101
出版年月 2012年4月13日 
出版者
和文: 
英文:The Japan Society of Applied Physics 
会議名称
和文: 
英文: 
開催地
和文: 
英文: 
DOI https://doi.org/10.1143/JJAP.51.051101
アブストラクト The optimization of textured boron-doped conductive zinc oxide (ZnO:B) films deposited by metal organic chemical vapor deposition (MOCVD) for hydrogenated microcrystalline silicon (µc-Si:H) solar cells was performed. We found that the argon (Ar) plasma treatment of a textured ZnO:B substrate is effective in improving the open-circuit voltage and fill factor of µc-Si:H solar cells. We proposed (tan θ)/λ2 as an evaluation factor and found that there is a clear correlation between the (tan θ)/λ2 of textured ZnO:B films and the open-circuit voltage of µc-Si:H solar cells. Moreover, the effect of the surface morphology of a textured ZnO:B substrate on the growth of intrinsic hydrogenated amorphous silicon (i-a-Si:H) top layers was examined to obtain the optimum conditions for preparing a-Si:H/µc-Si:H tandem solar cells. We confirmed that our proposed evaluation factor (tan θ)/λ2 could be used to obtain the surface morphology of i-a-Si:H top layers that are appropriate for µc-Si:H bottom-cell deposition.

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