In this study, the photoirradiation effect on the impedance of quantum dot solar cells (QDSCs) is evaluated. QDSCs under 1070 nm LED irradiation show current generation owing to the combination of photoexcitation and thermal escape via the QD state and exhibit an increase in conductance. On the other hand, 1550 nm LED irradiation increases the conductance of QDSCs with Si doping, although the current is not extracted. This result can be explained by the state filling of QDs by Si doping. Furthermore, the carrier generation efficiency is estimated, which implies that photoassisted impedance spectroscopy can potentially be used to evaluate intermediate-band solar cells.
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