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タイトル
和文: 
英文:Robust, high-performance n-type organic semiconductors 
著者
和文: 岡本 敏宏, 熊谷 翔平, 福﨑 英治, Hiroyuki Ishii, Go Watanabe, Naoyuki Niitsu, Tatsuro Annaka, Masakazu Yamagishi, Yukio Tani, Hiroki Sugiura, Tetsuya Watanabe, Shun Watanabe, Jun Takeya.  
英文: Toshihiro Okamoto, Shohei Kumagai, Eiji Fukuzaki, Hiroyuki Ishii, Go Watanabe, Naoyuki Niitsu, Tatsuro Annaka, Masakazu Yamagishi, Yukio Tani, Hiroki Sugiura, Tetsuya Watanabe, Shun Watanabe, Jun Takeya.  
言語 English 
掲載誌/書名
和文: 
英文:Science Advances 
巻, 号, ページ Vol. 6    Issue 18   
出版年月 2020年5月1日 
出版者
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英文: 
会議名称
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英文: 
開催地
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英文: 
公式リンク https://doi.org/10.1126/sciadv.aaz0632
 
DOI https://doi.org/10.1126/sciadv.aaz0632
アブストラクト Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.

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