"K. Tsutsui,M. Watanabe,Y. Nakagawa,T. Matsuda,Y. Yoshida,E. Ikenaga,K. Kakushima,P. Ahmet,H. Nohira,T. Maruizumi,A. Ogura,T. Hattori,H. Iwai","New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"Kazuo Tsutsui,Masamitsu Watanabe,Yasumasa Nakagawa,Kazunori Sakai,Takayuki Kai,Cheng-Guo Jin,Yuichiro Sasaki,Kuniyuki Kakushima,Parhat Ahmet,Bunji Mizuno,Takeo Hattori,Hiroshi Iwai.","Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique","The 8th International Workshop on Junction Technology (IWJT2008)",,,,,,2008,May
"ŽðˆäˆêŒ›,“nç³�«Œõ,’†�싱�¬,‹à �¬�‘,‰ª‰º �ŸŒÈ,�²�X–Ø—Yˆê˜N,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,Šp“ˆ–M”V,�…–ì •¶“ñ,•ž•”Œ’—Y,“›ˆäˆê�¶,Šâˆä—m","‹É�ó�Ú�‡ƒvƒ�ƒtƒ@ƒCƒŠƒ“ƒO‚Ì‚½‚ß‚Ì”½•œ‹]�µŽ_‰»ƒGƒbƒ`ƒ“ƒO‹Z�p","�t‹G‘æ55‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï","�t‹G‘æ55‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï—\�e�W","‰ž—p•¨—�Šw‰ï",,"No. 2","pp. 900",2008,Mar.