"Katuya Matano,Kiyohisa Funamizu,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric","China Semiconductor Technology International Conference",,"[",,,"pp. 1129-1134",2010,Mar.
"_“c‚Žu,‘D…΄‰i,Yueh Chin Lin,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,Edward Yi Chang,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","HfO2/ La2O3/ In0.53 Ga0.47As\‘’‚ΜŠE–Κ“Α«‚Μ•Ο‰»","‘ζ57‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰ο","‘ζ57‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰οu‰‰—\eW",,,,"pp. 13-141",2010,Mar.
"Kiyohisa Funamizu,Y.C. Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,E.Y. Chang,takeo hattori,HIROSHI IWAI","Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 265-270",2009,Oct.
"Kiyohisa Funamizu,Takashi Kanda,Y.C.Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"‘D…΄‰i,Yueh-Chin Lin,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,™ˆδM”V,Edward Yi Chang,•ž•”Œ’—Y,Šβˆδ—m","High-k ƒQ[ƒgβ‰–Œ‚π—p‚’‚½InxGa1-xAs MOS\‘’‚ΜŒ€‹†","‘ζ56‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰ο","‘ζ56‰ρ‰ž—p•¨—ŠwŠΦŒW˜A‡u‰‰‰ο—\eW","‰ž—p•¨—Šw‰ο",,"No. 2","pp. 837",2009,July
"‘D…΄‰i,K“c‚έ‚δ‚«,ŠΪŠμˆκ,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,™ˆδM”V,•ž•”Œ’—Y,Šβˆδ—m","CeOX/La2O3Ο‘wƒQ[ƒgβ‰–Œ\‘’‚Μ–Œ“Α«•]‰Ώ","H‹G‘ζ69‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο","H‹G‘ζ69‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο—\eW","‰ž—p•¨—Šw‰ο",,"No. 2","pp. 703",2008,Sept.