"Y. Takamura,K. Hayashi,Y. Shuto,R. Nakane,S. Sugahara","Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors",,"J. Electron. Mater.","Springer","vol. 41","no. 5","pp. 954-958",2012,Apr.
"高村陽太,林建吾,影井泰次郎,周藤悠介,菅原聡","ラジカル酸窒化膜を用いたCFS/SiOxNy/Siトンネル接合の形成と構造評価","第16回半導体スピン工学の基礎と応用(PASPS-16)",,,,,"p. 41",2011,Nov.
"Y. Takamura,K. Hayashi,Y. Shuto,S. Sugahara","Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier","International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by World’s Leading Scientists",,,"  paper P-40",,"pp. 127-128",2011,Oct.
"?村 陽太,林 建吾,周藤 悠介,菅原 聡","ラジカル酸窒化法を用いたCo2FeSi/SiOxNy/Siトンネル接合の形成","第72回応用物理学会学術講演会",,,"  31p-ZS-12",,,2011,Sept.
"Y. Takamura,K. Hayashi,Y. Shuto,S. Sugahara","Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique","Electronic Materials Conf. (EMC) 2011",,,"  DD-9",,"p. 96",2011,June
"林建吾,高村陽太,周藤悠介,菅原聡","RTA法を用いたCo2FeSiの形成における初期多層膜構造の影響","第58回応用物理学関係連合講演会",,,"  25a-KM-10",,,2011,Mar.
"K. Hayashi,Y. Takamura,R. Nakane,S. Sugahara","Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors",,"J. Appl. Phys.","American Institute of Physics.","Vol. 107",,"pp. 09B104/1-3",2010,Apr.
"林建吾,高村陽太,中根了昌,菅原聡","Co2FeSi/SiOxNy/Siトンネル接合の形成とその構造評価","第57回応用物理学関係連合講演会",,,"  17a-ZH-5",,,2010,Mar.
"K. Hayashi,Y. Takamura,R. Nakane,S. Sugahara","Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films","IEEE International Magnetics Conference (INTERMAG 09)",,,,,"  paper ES-08",2009,May
"林建吾,高村陽太,中根了昌,菅原聡","極薄絶縁膜上へのフルホイスラー合金Co2FeSiの形成とその評価","第56回応用物理学関連連合講演会",,,"  1a-Q-5",,,2009,Mar.
"林建吾,高村陽太,中根了昌,菅原聡","非晶質絶縁膜上へのフルホイスラー合金Co2FeSiの形成と評価","第13回半導体スピン工学の基礎と応用 (PASPS-13)",,,"  B-3",,"p. 9",2009,Jan.