"Ryo Wakabayashi,Kohei Yoshimatsu,Mai Hattori,Jung-Soo Lee,Osami Sakata,Akira Ohtomo","Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1?x)2O3 (100) Films by Pulsed-laser Deposition",,"Cryst. Growth Des.",,"Vol. 21","No. 5","Page 2844-2849",2021,Apr.
"Jung-Soo Lee,Ryo Wakabayashi,Takumi Saito,Kohei Yoshimatsu,Motohisa Kado,Akira Ohtomo","High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma","CSW2019",,,,,,2019,May
"Takumi Saito,Ryo Wakabayashi,Jung-Soo Lee,Kaisei Kamei,Kohei Yoshimatsu,Motohisa Kado,Akira Ohtomo","Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer","CSW2019",,,,,,2019,May
"李 政洙,若林 諒,斉藤 拓海,吉松 公平,加渡Kado,大友 明","PLD法による窒素ドープ酸化ガリウム薄膜の成長と電気特性評価","第66回応用物理学会春季学術講演会",,,,,,2019,Mar.
"斉藤 拓海,若林 諒,李 政洙,亀井 海聖,吉松 公平,加渡Kado,大友 明","半絶縁性中間層によるβ-Ga2O3ホモエピタキシャル層の界面伝導の抑制","第66回応用物理学会春季学術講演会",,,,,,2019,Mar.
"李政洙,若林諒,吉松 公平,大友 明","ウェットエチングを用いた<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>(100)基板表面のSi不純物除去","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.