"黒澤裕也,角谷直哉,高橋綱己,大橋輝之,小田俊理,内田建","不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響","第74回応用物理学会秋季学術講演会",,,,,,2013,Sept.
"Teruyuki Ohashi,Shunri Oda,Ken Uchida","Impact of Deformation Potential Increase at Si/SiO$_{2}$ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal?Oxide?Semiconductor Field-Effect Transistors",,"Japanese Journal of Applied Physics",,"Vol. 52",,"pp. 04CC12 (6 pages)",2013,Mar.
"Teruyuki Ohashi,Shunri Oda,Ken Uchida","Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in MOSFET","IEEE EDS WIMNACT-37",,,,,"  P-15",2013,
"大橋輝之,小田俊理,内田建","歪みによる電子移動度向上へMOS界面における変形ポテンシャル上昇が与える影響","第60回応用物理学会春季学術講演会",,,,,,2013,
"T. Ohashi,T. Takahashi,T. Kodera,S. Oda,K. Uchida","Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms","2012 International Conference on Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"大橋輝之,高橋綱己,内田 建,小田俊理","MOS 界面における変形ポテンシャルの上昇","第59回応用物理学関係連合講演会",,,,,"  17a-A1-3",2012,Mar.
"黒澤裕也,角谷直哉,高橋綱己,大橋輝之,小田俊理,内田 建","ナノ薄膜SOI における不純物のイオン化エネルギー増大","第59回応用物理学関係連合講演会",,,,,"  17a-A1-4",2012,Mar.
"Teruyuki Ohashi,Shunri Oda,Ken Uchida","Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs","ECS Transactions",,,"Vol. 50 (9)",,"pp. 171-174",2012,
"大橋輝之,高橋綱己,小寺哲夫,小田俊理,内田 建","ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明","秋季 第73回応用物理学会学術講演会",,,,,,2012,
"T. Ohashi,T. Takahashi,N. Beppu,S. Oda,K. Uchida","Experimental Evidence of Increased Deformation Potential at MOS Interface and its Impact on Characteristics of ETSOI FETs","IEDM2011",,,,"No. 16.4",,2011,Dec.
"Teruyuki Ohashi,Naotoshi Kadotani,Tsunaki Takahashi,Shunri Oda,Ken Uchida","Mechanisms of electron mobility enhancement in junctionless SOI MOSFETs","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,"  P-15",2011,Oct.
"N. Kadotani,T. Ohashi,T. Takahashi,S. Oda,K. Uchida","Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors",,"Japanese Journal of Applied Physics",,"Vol. 50",,"pp. 094101 (7 pages)",2011,Sept.
"大橋輝之,高橋綱己,小寺哲夫,小田俊理,内田 建","低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価","第72回応用物理学会学術講演会",,,,,"pp. 2a-J-11",2011,Aug.
"T. Ohashi,T. Takahashi,N. Beppu,S. Oda,K. Uchida","Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristic of ETSOI FETs","IEDM 2011",,,,,"pp. 390-393",2011,
"N. Kadotani,T. Takahashi,T. Ohashi,S. Oda,K. Uchida","Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm",,"Journal of Applied Physics",,"Vol. 110",,"pp. 034502. (7 pages)",2011,