"Lei Yiming","A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics",,,,,,,2018,June
"Lei Yiming","A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics",,,,,,,2018,June
"Lei Yiming","A Study on Atomic Layer Deposited SiO2 for SiC Gate Dielectrics",,,,,,,2018,June
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakawa,Kuniyuki Kakushima","Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors",,"Microelectronics Reliability",,"vol. 84",,"pp. 248-252",2018,May
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakaw,Kuniyuki Kakushima","Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing",,"Microelectronics Reliability",,"vol. 84",,"pp. 226-229",2018,May
"Y. M. Lei,T. Kaneko,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,M. Furuhashi,S. Tomohisa,S. Yamakawa","Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.