"Y. Miyamoto,S. Takahashi,T. Kobayashi,Hiroyuki Suzuki,K. Furuya","Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector",,"IEICE Trans. Electron.","電子情報通信学会","vol. E93C","no. 5","pp. 644-647",2010,May
"武部直明,山下浩明,高橋新之助,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったin-situエッチング","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"YASUYUKI MIYAMOTO,Shinnosuke Takahashi,Takashi Kobayashi,Hiroyuki Suzuki,KAZUHITO FURUYA","Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"武部直明,山下浩明,高橋新之助,齋藤尚史,小林 嵩,宮本恭幸,古屋一仁","SiO2細線埋込InP系HBTにおけるCBr4を使ったIn-situエッチング","電子情報通信学会電子デバイス研究会",,,,,,2009,June
"高橋新之助,山下浩明,小林嵩,磯谷優治,鈴木裕之,宮本恭幸,古屋一仁","EB露光により作製したエミッタ幅200nmのInP/InGaAs SHBT","2008年秋季第69回応用物理会学術講演会",,,,,,2008,Sept.
"Shinnosuke Takahashi,Tsukasa Miura,Hiroaki Yamashita,Yasuyuki Miyamoto,Kazuhito Furuya","DC Characteristics of Heterojunction Bipolar Transistor with Buried SiO2 Wires in Collector","The 34th International Symposium on Compound Semiconductors",,,,,,2007,Oct.
"Hiroaki Yamashita,Tsukasa Miura,Shinnosuke Takahashi,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT","7th Topical Workshop on Heterostructure Microelectronics",,,,,,2007,Aug.