"ΰ_“c —TŽj,’η ‘μ–η,™ŽR OŽχ,Όθ GΊ,‰ͺ“c Œ’ˆκ,–μβ G”V","80nm InP-HEMTƒeƒNƒmƒƒW‚π—p‚’‚½300GHz‘Ρ‘½’l•Ο’²ƒgƒ‰ƒ“ƒV[ƒo—p‚ƒAƒCƒ\ƒŒ[ƒVƒ‡ƒ“ƒ~ƒLƒT","“dŽqξ•ρ’ʐMŠw‰ο ƒ\ƒTƒCƒGƒeƒB‘ε‰ο",,,,,,2018,Sept.
"ΰ_“c —TŽj,“‘‘Ί ‘ρ–ν,Ibrahim Abdo,‰ͺ“c Œ’ˆκ,’η ‘μ–η,ƒ\ƒ“ ƒzƒWƒ“,™ŽR OŽχ,Όθ GΊ,–μβ G”V","InP-HEMT‚Ι‚ζ‚ι300GHz‘Ρ100Gb/sƒgƒ‰ƒ“ƒV[ƒo","“dŽqξ•ρ’ʐMŠw‰ο ƒ}ƒCƒNƒ”gŒ€‹†‰ο",,,"Vol. MW2018-60",,"pp. 7-12",2018,Sept.
"Hiroshi Hamada,Takuya Fujimura,Ibrahim Abdo,Kenichi Okada,Ho-jin Song,Hiroki Sugiyama,Hideaki Matsuzaki,Hideyuki Nosaka","300-GHz, 100-Gb/s InP-HEMT Wireless Transceiver Using a 300-GHz Fundamental Mixer","IEEE MTT-S International Microwave Symposium (IMS)",,,,,"pp. 1480-1483",2018,June
"H. Sugiyama,A. Teranishi,S. Suzuki,M. Asada","Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates",,"Jpn. J. Appl. Phys.",,"vol. 53",,"p. 031202",2014,Feb.