"Y. M. Lei,T. Kaneko,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,M. Furuhashi,S. Tomohisa,S. Yamakawa","Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.