"H. Sugiyama,A. Teranishi,S. Suzuki,M. Asada","Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates",,"Jpn. J. Appl. Phys.",,"vol. 53",,"p. 031202",2014,Feb.
"A. Teranishi,S. Suzuki,K. Shizuno,M. Asada,H. Sugiyama,H. Yokoyama","Estimation of Transit time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers",,"Trans. Electron. IEICE of Japan",,"vol. E95-C","no. 3","pp. 401-407",2012,Mar.
"A. Teranishi,K. Shizuno,S. Suzuki,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay",,"IEICE Electron. Express",,"vol. 9","no. 5","pp. 385-390",2012,Mar.
"H. Sugiyama,A. Teranishi,S. Suzuki,M. Asada","High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6�~10<sup>5</sup> A/cm<sup>2</sup> Grown by Metal-Organic Vapor-Phase Epitaxy",,"J. Crystal Growth",,"vol. 336",,"pp. 24-28",2011,Sept.
"S. Suzuki,M. Asada,A. Teranishi,H. Sugiyama,H. Yokoyama","Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature",,"Appl. Phys. Lett.",,"Vol. 97",,"p. 242102",2010,Dec.
"S. Suzuki,K. Sawada,A. Teranishi,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doping structures",,"Electron. Lett.",,"vol. 46",,"pp. 1006-1007",2010,July
"H. Sugiyama,H. Yokoyama,A. Teranishi,S. Suzuki,M. Asada","Extremely High Peak Current Densities of over 1�~10<sup>6</sup> A/cm<sup>2</sup> in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal?Organic Vapor-Phase Epitaxy",,"Jpn. J. Appl. Phys.",,"vol. 49",,"p. 051201",2010,
"M. Shiraishi,S. Suzuki,A. Teranishi,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas",,"Jpn. J. Appl. Phys.",,"vol. 49",,"p. 020211",2010,
"Safumi Suzuki,Atsushi Teranishi,Kensuke Hinata,Masahiro Asada,Hiroki Sugiyama,Haruki Yokoyama","Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode",,"Applied Physics Express",,"Vol. 2",,"p. 054501",2009,Apr.
"N. Kishimoto,S. Suzuki,A. Teranishi,M. Asada","Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers",,"Applied Phys. Express",,"vol. 1",,"p. 042003",2008,