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"A. Teranishi,K. Shizuno,S. Suzuki,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay",,"IEICE Electron. Express",,"vol. 9","no. 5","pp. 385-390",2012,Mar.
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"H. Sugiyama,A. Teranishi,S. Suzuki,M. Asada","High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6�~10<sup>5</sup> A/cm<sup>2</sup> Grown by Metal-Organic Vapor-Phase Epitaxy",,"J. Crystal Growth",,"vol. 336",,"pp. 24-28",2011,Sept.
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"S. Suzuki,K. Sawada,A. Teranishi,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doping structures",,"Electron. Lett.",,"vol. 46",,"pp. 1006-1007",2010,July
"H. Sugiyama,H. Yokoyama,A. Teranishi,S. Suzuki,M. Asada","Extremely High Peak Current Densities of over 1�~10<sup>6</sup> A/cm<sup>2</sup> in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal?Organic Vapor-Phase Epitaxy",,"Jpn. J. Appl. Phys.",,"vol. 49",,"p. 051201",2010,
"M. Shiraishi,S. Suzuki,A. Teranishi,M. Asada,H. Sugiyama,H. Yokoyama","Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas",,"Jpn. J. Appl. Phys.",,"vol. 49",,"p. 020211",2010,
"Safumi Suzuki,Atsushi Teranishi,Kensuke Hinata,Masahiro Asada,Hiroki Sugiyama,Haruki Yokoyama","Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode",,"Applied Physics Express",,"Vol. 2",,"p. 054501",2009,Apr.
"N. Kishimoto,S. Suzuki,A. Teranishi,M. Asada","Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers",,"Applied Phys. Express",,"vol. 1",,"p. 042003",2008,