"M. Yamada,K. Uchida,Y. Miyamoto","Delay time component of InGaAs MOSFET caused by dynamic source resistance",,"IEICE Trans. Electron",,"Vol. E97-C","No. 5","pp. 419-422",2014,May
"宮本恭幸,山田真之,内田建","InGaAs MOSFETにおけるソース充電時間の検討","電子情報通信学会技術研究報告",,,,,,2012,Jan.
"M. Yamada,T. Uesawa,Y. Miyamoto,K. Furuya","Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density",,"IEEE Electron Device Lett.","IEEE","vol. 32","# 4","pp. 491-493",2011,Apr.
"M. Yamada,T. Uesawa,Y. Miyamoto,K. Furuya","Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density","37th International Symposium on Compound Semiconductor",,,,,,2010,June
"Takafumi Uesawa,Masayuki Yamada,Yasuyuki Miyamoto,Kazuhito Furuya","Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases",,"Japanese Journal of Applied Physics","応用物理学会","Vol. 49",,"  024302",2010,Feb.
"山田真之,上澤岳史,宮本恭幸,古屋一仁","HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱","電子情報通信学会電子デバイス研究会","電子情報通信学会技術研究報告 電子デバイス",,,,,2010,Jan.
"山田真之,上澤岳史,宮本恭幸,古屋一仁","HBTにおける超高速動作時エミッタ充電時間の理論的解析","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"Takafumi Uesawa,Masayuki Yamada,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases","Topical Workshop on Heterostructure Materials (TWHM2009)",,,,,,2009,Aug.
"上澤岳史,山田真之,宮本恭幸,古屋一仁","超薄層ベースInP/GaInAs HBTの組成傾斜によるベース走行時間短縮","2009年春季第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"上澤岳史,山田真之,宮本恭幸,古屋一仁","超薄層ベースInP 系HBT におけるGraded Base によるベース走行時間短縮","Technical Report of IEICE, Electron Devices",,,,,,2009,Jan.