"Yoriko Mizushima,Youngsuk Kim,Tomoji Nakamura,Akira Uedono,Takayuki Ohba","Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure",,"Microelectronic Engineering","ELSEVIER","Vol. 167",,"pp. 23-31",2017,Jan.
"Aki Dote,Hideki Kitada,Yoriko Mizushima,Tomoji Nakamura,Seiki Sakuyama","Characterization of Warpages and Layout-Dependent Local-Deformations for Large Die 3D Stacking","2016 IEEE 66th Electronic Components and Technology Conference","Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th","IEEE",,,"pp. 1899",2016,June
"Y. S. Kim,S. Kodama,Y. Mizushima,T. Nakamura,N. Maeda,K. Fujimoto,A. Kawai,T. Ohba","Warpage-free Ultra-Thinning ranged from 2 to 5-ƒÊm for DRAM Wafers and Evaluation of Devices Characteristics","2016 IEEE 66th Electronic Components and Technology Conference","Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th","IEEE",,,"pp. 1471-1476",2016,June
"Dote Aki,Kitada Hideki,Mizushima Yoriko,Nakamura Tomoji,Sakuyama Seiki","Analyzing and modeling methods for warpages of thin and large dies with redistribution layer",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 55","No. 6",,2016,May
"Mizushima Yoriko,Kim Youngsuk,Nakamura Tomoji,Sugie Ryuichi,Hashimoto Hideki,Uedono Akira,Ohba Takayuki","Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 53","No. 5",,2014,Apr.
"Noriyuki Taoka,Osamu Nakatsuka,Yoriko Mizushima,Hideki Kitada,Young Suk Kim,Tomoji Nakamura,Takayuki Ohba,Shigeaki Zaima","Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction",,"Japanese Journal of Applied Physics",,"Volume 53",,,2014,Apr.
"Akira Uedono,Yoriko Mizushima,Youngsuk Kim,Tomoji Nakamura,Takayuki Ohba,Nakaaki Yoshihara,Nagayasu Oshima,Ryoichi Suzuki","Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic",,"Journal of Applied Physics","AIP","Vol. 116","  134501",,2014,