"Takuya Hoshii,Shuma Tsuruta,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"’ß“c ãų^,Ŋˆä ‘ņ–į,’†“‡ š,žāV Lˆę,‘å‹ī O’Ę,Šp“ˆ –M”V,Žá—Ņ Ū,“›ˆä ˆęķ","AlGaN/GaN ŠE–ʏ€ˆĘ‚Š•Š‹ÉÚ‡Šî”ã p-MOSFET ‚Ė“d—Ž“ÁŦ‚É—^‚Ķ‚é‰e‹ŋ","‘æ79‰ņ‰ž—p•Ļ—Šw‰ïH‹GŠwpu‰‰‰ï",,,,,,2018,Sept.