"K. Ohashi,M. Fujimatsu,S. Iwata,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs",,"Jpn. J. Appl.Phys.",,"Vol. 54","Number 4S",,2015,Apr.
"大橋一水,藤松基彦,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける SSとON電流のボディ幅依存性","第75回応用物理学会秋季学術講演会",,,,,,2014,Sept.
"K. Ohashi,M. Fujimatsu,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs","2014 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2014,Sept.
"大橋一水,藤松基彦,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いたDouble-Gate Tunnel FETの理論特性とその実験的検証","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"宮本 恭幸,藤松 基彦","GaAsSb/InGaAs 縦型トンネル FET","電気学会電子デバイス研究会",,,,,,2013,Mar.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ト?レイン層及ひ?狭チャネルメサ幅による縦型 InGaAs チャネル MISFET の高電圧利得化","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"藤松基彦,宮本恭幸","GaAsSb/InGaAs ヘテロ接合を用いた縦型トンネル FET における サフ?スレッショルト?スローフ?の改善","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"M. Fujimatsu,H. Saito,Y. Miyamoto","71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure","24th Int. Conf. Indium Phosphide and Related Materials (IPRM2012)",,,,,,2012,Aug.
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","半導体ドレイン層及び狭チャネルメサ幅による縦型InGaAsチャネルMISFETの高電圧利得化","電子情報通信学会技術研究報告",,,,,,2012,May
"柏野壮志,平井準,池田俊介,藤松基彦,宮本恭幸","GaN HEMT のソース・ドレイン間容量のデバイスシミュレーションによる解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"藤松基彦,齋藤尚史,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"藤松基彦,齋藤尚史,楠崎智樹,松本 豊,平井 準,宮本恭幸","GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究","第58回応用物理学会関係連合講演会",,,,,,2011,Mar.
"Motohiko Fujimatsu,Hisashi Saito,YASUYUKI MIYAMOTO","GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure","2011 International Conference on Solid State Devices and Materials(SSDM 2011)",,,,,,2011,