"Yusuke Takei,Kazuo Tsutsui,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai","Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 4",,2016,Apr.
"武井優典","AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究",,,,,,,2016,Mar.
"武井優典","AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究",,,,,,,2016,Mar.
"武井優典","AlGaN/GaN系HEMTにおけるオーミック電極のコンタクト抵抗低減に関する研究",,,,,,,2016,Mar.
"Yusuke Takei,Tomohiro Shimoda,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai","Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns","2015 Material Research Society (MRS) Fall Meeting",,,,,,2015,Nov.
""Yusuke Takei","Masayuki Kamiya","Kazuo Tsutsui","Wataru Saito","Kuniyuki Kakushima","Hitoshi Wakabayashi","Yoshinori Kataoka","Hiroshi Iwai"","Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers",,"Physica Status Solidi A",,"Vol. 212","No. 5","pp. 1104-1109",2015,Feb.
"Kazuo Tsutsui,Masayuki Kamiya,Yusuke Takei,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Yoshinori Kataoka,Hiroshi Iwai","Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers","The International Workshop on Nitride Semiconductors (IWN2014)",,,,,,2014,Aug.
""Yusuke Takei","Mari Okamoto","Wataru Saito","Kazuo Tsutsui","Kuniyuki Kakushima","Hitoshi Wakabayashi","Yoshinori Kataoka","Hiroshi Iwai"","Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures",,"ECS Transactions",,"Vol. 61","No. 4","pp. 265-270",2014,May
"Y. Takei,M. Okamoto,W. Saito,K. Tsutsui,K. Kakushima,H. Wakabayashi,Y. Kataoka,H. Iwai","Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures","225th ECS Meeting",,,,,,2014,May
"M. Kamiya,Y. Takei,W. Saito,K. Kakushima,H. Wakabayashi,Y. Kataoka,K. Tsutsui,H. Iwai","Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Yusuke Takei,Mari Okamoto,S. Man,Ryosuke Kayanuma,Masayuki Kamiya,齋藤渉,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,HIROSHI IWAI","Contact resistances depending on AlGaN layer thickness  for AlGaN/GaN HEMT structures","The Workshop on Future Trend of Nanoelectronics:WIMNACT",,,,,,2014,
"武井優典,岡本真里,マンシン,萱沼怜,神谷真行,齋藤渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系2次元電子ガスへのコンタクト特性における電極材料およびAlGaN膜厚依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"Masayuki Kamiya,Yusuke Takei,齋藤渉,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,HIROSHI IWAI","Evaluation of 2DEG distribution on AlGaN/GaN HEMTs introducing uneven AlGaN layers and its possibility for low-resistive contacts formation","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Sin Man,Rei Kayanuma,Yusuke Takei,T. Takahashi,M. Shimizu,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,HIROSHI IWAI","A Study on the Fabrication of GaN-FinFET Using  Selective Area Growth Method","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"神谷真行,武井優典,齋藤渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN高電子移動度トランジスタへの凹凸AlGaN層導入による低抵抗コンタクト形成の可能性","第61回応用物理学会春季学術講演会",,,,,,2014,
"武井優典,神谷真行,寺山一真,米澤宏昭,齋藤 渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"神谷真行,寺山一真,武井優典,齋藤 渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性","第74回応用物理学会秋季学術講演会",,,,,,2013,