"M. S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Electrical and Memory Window Properties of Sr<sub>0.8-x</sub>Ba<sub>x</sub>Bi<sub>2.2</sub>Ta<sub>2-y</sub>Zr<sub>y</sub>O<sub>9</sub> Ferroelectric Gate in Metal-Ferroelectric-Insulator-Semiconductor Structure",,"Journal of Electroceramics",,"Vol. 28","No. 2-3","pp. 158-164",2012,Mar.
"Lee Gwang Geun,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO","第７２回応用物理学会学術講演会",,,,,,2011,Aug.
"Gwang-Geun Lee,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Express",,"Vol. 4",,"pp. 091103-1-3",2011,Aug.
"Gwang-Geun Lee,Eisuke Tokumitsu,Sung-Min Yoon,Yosihisa Fujisaki,Joo-Won Yoon,Hiroshi Ishiwara","The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Letters",,"Vol. 99",,"pp. 012901-1-3",2011,July
"Jeong Hwan Kim,Hiroshi Funakubo,Hiroshi Ishiwara","Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering",,"Jpn. J. Appl. Phys.",,"Vol. 50",,"pp. 051501-1-4",2011,
"Jeong Hwan Kim,Hiroshi Funakubo,Hiroshi Ishiwara","High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0:95Mn0:05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates",,"Applied Physics Express",,"Vol. 4",,"pp. 081501-1-3",2011,
"G.-G. Lee,S.-M. Yoon,J.-W. Yoon,Y. Fujisaki,H. Ishiwara,E. Tokumitsu","Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)","The 17th International Display Workshops(IDW’10)",,,,,,2010,Dec.
"GwangGeun Lee,Sung-ming Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs","2010 fall meeting, Materials Research Society",,,,,,2010,Nov.
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates",,"Microelectronic Engineering",,"Vol. 87","No. 11","pp. 2173-2177",2010,July
"Sung-Min Yoon,Shin-Hyuk Yang,Soon-Won Jung,Chun-Won Byun,Sang-Hee Ko Park,Chi-Sun Hwang,Gwang-Geun Lee,Eisuke Tokumitsu,Hiroshi Ishiwara","Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor",,"Applied Physics Letters",,,"No. 96","  232903 1-3",2010,May
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,藤崎芳久,石原宏,徳光永輔","有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価",,"信学技報、SDM2010-16、OME2010-16(2010-04)","社団法人電子情報通信学会","Vol. 110","No. 15","pp. 71-75",2010,Apr.
"Young uk Song,Shun-ichiro Ohmi,Hiroshi Ishiwara","Investigation of n-type properties of pentacene based on MOS diodes utilizing ultra thin metal interlayer","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 12-435",2010,Mar.
"Jeong Hwan Kim,Hiroshi Funakubo,Yoshihiro Sugiyama,Hiroshi Ishiwara","Process-dependent coercive fields in undoped and Mn-doped BiFeO3 films formed on SrRuO3/Pt(111) electrodes by rf sputtering",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1199",,"pp. 1199-F06-33",2010,
"GwangGeun Lee,Sung-ming Yoon,JooWon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film","2009 fall meeting, Materials Research Society",,,,,,2009,Nov.
"Lee Gwang Geun,Hoowon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode","第70回 応用物理学会学術講演会","第70回 応用物理学会学術講演会",,,"  11p-L-2",,2009,Sept.
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr doping in Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films",,"Materials Science and Engineering B",,"Vol. 161",,"pp. 130-133",2009,June
"Mehmet S. Bozgeyik,Jeffrey S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"pp. 061403-6",2009,June
"M. Akhtaruzzaman,S. Ohmi,J. Nishida,Y. Yamashita,H. Ishiwara","Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics",,"Japan J. Appl. Phys.",,"Vol. 48",,"p. 04C178-1-3",2009,June
"Joo-Won Yoon,Shun-ichiro Ohmi,Hiroshi Ishiwara","Retention Characteristics of poly(vinylidenefluoride-trifluoroethylene)MFIS diodes","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,,2009,Mar.
"Jeong Hwan Kim,Hiroshi Funakubo,Yoshihiro Sugiyama,Hiroshi Ishiwara","Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering",,"Jpn. J.Appl. Phys.",,"Vol. 48",,"pp. 09KB02-1-4",2009,
"陸旭兵,石原宏","Improved electrical properties of metal-ferroelectric-insulator-silicon diodes using an epitaxial SrTio<sub>3</sub> buffer layer","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  3a-K-10/II",,,2008,Sept.
"田中敬人,安念一規,井端雅一,石原宏","平坦化強誘電体膜を用いたC<sub>60</sub>メモリトランジスタ","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  3a-K-11/II",,,2008,Sept.
"近藤佑美,鉾宏真,石原宏","2T型強誘電体メモリのデータディスターブ特性IV","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  3a-K-8/II",,,2008,Sept.
"鉾宏真,川嶋将一郎,石原宏","p-ch MFIS-FETとn-ch MOSFETからなる改良２T型FeRAMセルの電気特性",,"2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集","2008年（平成20年）秋季第69回応用物理学会学術講演会","  3a-K-7/II",,,2008,Sept.
"王冬きょう,石原宏","Sr<sub>2</sub>(Ta,Nb)<sub>2</sub>O<sub>7</sub>を強誘電体層に用いたMFISの評価","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  3a-K-5/II",,,2008,Sept.
"尹珠元,石原宏","Characterics of MFIS structures based on poly (vinylidene fluoridetrifluoroethylene)","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  3a-K-4/II",,,2008,Sept.
"金正桓,舟窪浩,石原宏","SrRuO<sub>3</sub>/Pt(111)とPt(111)の上にスパッタで形成されたBiFeO<sub>3</sub>膜の電気特性評価","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  2p-K-1/II",,,2008,Sept.
"鐘志勇,石原宏","Enhanced ferroelectric properties of BiFe<sub>x</sub>Cr<sub>1-x</sub>O<sub>3</sub> thin film formed by chemical solution deposition","2008年（平成20年）秋季第69回応用物理学会学術講演会","2008年（平成20年）秋季第69回応用物理学会学術講演会講演予稿集",,"  2a-K-11/II",,,2008,Sept.
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Ferroelectric and Electrical Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1071",,"pp. 207-212",2008,June
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr Doping in Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)",,,"No. PC07",,2008,May
"尹珠元,大見俊一郎,石原宏","Characteristics of metal-ferroelectric-insulartor-semiconductor structures based on poly(vinylidene fluoride-trifluoroethylene)","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 549","pp. 13-16",2008,Mar.
"王冬きょう,石原宏","バッファ層を用いたMFISダイオードの評価","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",,"  30a-P14-31/II",,,2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride-trifluoroethylene) MFIS diodes","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",,"  30a-P14-30/II",,,2008,Mar.
"陸旭兵,杉山芳弘,石原宏","Electrical Properties of ZrSiO<sub>4</sub> doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> films","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",,"  30a-P14-11/II",,,2008,Mar.
"Mehmet Sait Bozgeyik,Jeffery S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric and Electrical Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films","MRS Spring Meeting","MRS Spring Meeting",,,"  F3.9",,2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride - trifluoroethylene) MFIS diodes","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 579",2008,Mar.
"安念一規,田中敬人,井端雅一,石原宏","C<sub>60</sub>フラーレンを用いた強誘電体ゲートトランジスタ(II)","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",,"  28a-ZE-14/III",,,2008,Mar.
"近藤佑美,李月剛,鉾宏真,有本由弘,石原宏","2T型強誘電体メモリのデータディスターブ特性の評価III","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",,"  30a-P14-32/II",,,2008,Mar.
"X-B Lu,K. Maruyama,H. Ishiwara","Characterization of HfTaO films for gate oxide and etal-ferroelectric-insulator-silicon device applications",,"J. Appl. Phys.",,"Vol. 103",,"p. 044105(5pages)",2008,Feb.
"X-B Lu,K. Maruyama,H. Ishiwara","Metal-ferroelectric-insulator-Si devices using HfTaO buffer layers",,"Semicond. Sci. Technol.",,"Vol. 23",,"p. 045002 (5pp)",2008,Feb.
"Y. Taniguchi,T. Endo,K. Azuma,M. Matsumura,H. Ishiwara","Novel Optical Method for Widening Process Window of Phase-Modulated Excimer Laser Crystallization",,"Jpn. J. Appl. Phys.",,"Vol. 47","No. 2","pp. 947-955",2008,Feb.
"S. K. Singh,H. Ishiwara,K. Sato,K. Maruyama","Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO<sub>3</sub> thin films",,"J. Appl. Phys.",,"Vol. 102",,"p. 094109(5pages)",2007,Nov.
"S. Fujisaki,Y. Fujisaki,H. Ishiwara","Excellent Ferroelectricity of Thin Poly (Vinylidene Fluoride-Trifluoroethylene) Copolymer Films and Low Voltage Operation of Capacitors and Diodes",,"IEEE Trans. on Untrsonics, Ferroelectrics, and Frequency Control",,"Vol. 54","No. 12","pp. 2592-2594",2007,Nov.
"J-W.Yoon,S.Fujisaki,H.Ishiwara","Patterning of poly(vinyliden fluoride-trifluoroethylene) thin films by oxygen plasma etching","4th Conf. on New Exploratory Technologies","4th Conf. on New Exploratory Technologies",,"Vol. Eo3-03",,,2007,Oct.
"HIROSHI ISHIWARA","Recent Progress in Ferroelectric Memory Technology","4th Conf. on New Exploratory Technologies","4th Conf. on New Exploratory Technologies",,"Vol. II-01",,,2007,Oct.
"HIROSHI ISHIWARA","Current Status and Prospect of Ferroelectric Random Access Memory","5th IUMRS Intern. Conf. on Advanced Materials","5th IUMRS Intern. Conf. on Advanced Materials",,"Vol. C-Inv-01",,,2007,Oct.
"S.K.Singh,K.Maruyama,H.Ishiwara","Enhanced electrical properties by co-doping of La, Mn and Cr atoms in BiFeO<sub>3</sub> thin films","5th IUMRS Intern. Conf. on Advanced Materials","5th IUMRS Intern. Conf. on Advanced Materials",,"Vol. C-Oral-13",,,2007,Oct.
"HIROSHI ISHIWARA","Current status and prospect of ferroelectric random access memory","Intern. Sympo. on Organic and Inorganic Electronic Materials and Related Nanotechnologies","Intern. Sympo. on Organic and Inorganic Electronic Materials and Related Nanotechnologies",,"Vol. 1A-07I",,,2007,Oct.
"岡沢昴,丸山研二,石原宏","低比誘電率材料Bi<sub>2</sub>W<sub>0.9</sub>Mn<sub>0.1</sub>O<sub>6</sub>薄膜のMFISデバイスへの適用","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-3/?",,,2007,Sept.
"池田武嗣,田渕良志明,田村哲朗,鉾宏真,有本由弘,石原宏","MSIF-FETを用いたNAND型強誘電体メモリ回路における書込みディスター","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-5/?",,,2007,Sept.
"鉾宏真,李月剛,丸山研二,石原宏","p-ch MFIS-FETとn-ch MOSFETからなる２T型FeRAMセルの電気特性評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-6/?",,,2007,Sept.
"李月剛,丸山研二,鉾宏真,有本由弘,石原宏","２T型強誘電体メモリのディスターブ特性の評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-7/?",,,2007,Sept.
"井端雅一,高下裕一郎,石原宏","カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタのモデリング","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-10/?",,,2007,Sept.
"鍾志勇,S.K.Singh,丸山研二,石原宏","A Reduced Coercive Electric Field in Mn-substituted BiFeO<sub>3</sub> Thin Films Formed by Chemical Solution Deposition Method","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 5p-ZL-2/?",,,2007,Sept.
"安念一規,井端雅一,石原宏","C<sub>60</sub>フラーレンを用いた強誘電体ゲートトランジスタ","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-12/?",,,2007,Sept.
"陸旭兵,鉾宏真,丸山研二,石原宏","Electrical Properties of Metal-ferroelectric-Insulator-Silicon using HfTaO as Buffer Layer","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-4/?",,,2007,Sept.
"高下裕一郎,井端雅一,石原宏","強誘電体ゲートカーボンナノチューブトランジスタの作製と真空中における評価","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4p-ZL-11/?",,,2007,Sept.
"藤崎寿美子,石原宏,藤崎芳久","薄膜P(VDF-TrFE)コポリマーを用いた強誘電体キャパシタの高速動作","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4a-ZL-9/?",,,2007,Sept.
"尹珠元,石原宏","Ferroelectric Characteristics of Patterned p(VDF-TrFE) Thin Films","2007年(平成19年)秋季第68回応用物理学会学術講演会","2007年(平成19年)秋季第68回応用物理学会学術講演会",,"Vol. 4a-ZL-10/?",,,2007,Sept.
"HIROSHI ISHIWARA","Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors","Nano Korea 2007 Sympo.","Nano Korea 2007 Sympo.",,"Vol. Room 213-1",,,2007,Aug.
"HIROSHI ISHIWARA","Current status and future prospect of FET-type ferroelectric memories","2nd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory","2nd Intern. Sympo. on Next Generation Non-volatile Memory Technology for Terabit Memory",,"Vol. 3-3",,,2007,June
"S.K.Singh,N.Menou,H.Funakubo,K.Maruyama,H.Ishiwara","(111)-textured Mn-substituted BiFeO<sub>3</sub> thin films on SrRuO<sub>3</sub>/Pt/Ti/SiO<sub>2</sub>/Si structures",,"Appl. Phys. Lett.",,"Vol. 90",,"p. 242914 (3pages)",2007,June
"S.Fujisaki,Y.Fujisaki,H.Ishiwara","Excellent ferroelectricity of thin poly (vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes","16th IEEE Intern. Sympo. on Applications of Ferroelectrics","16th IEEE Intern. Sympo. on Applications of Ferroelectrics",,"Vol. 30B-FR5-O1","No. Proc.","pp. 487-489",2007,May
"S.K.Singh,K.Sato,K.Maruyama,H.Ishiwara","Frequency dependent polarization in pure and doped BiFeO<sub>3</sub> thin films prepared by chemical solution deposition","19th Intern. Sympo. on Integrated Ferroelectrics","19th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 5D-209-C",,,2007,May
"Z-Y.Zhong,S.K.Singh,K.Maruyama,H.Ishiwara","Ferroelectric properties of Mn-substituted BiFeO<sub>3</sub> thin films on Ir electrodes","16th IEEE Intern. Sympo. on Applications of Ferroelectrics","16th IEEE Intern. Sympo. on Applications of Ferroelectrics",,"Vol. 28A-TF1-O3","No. Proc.","pp. 376-379",2007,May
"X-B.Lu,H.Hoko,K.Maruyama,H.Ishiwara","Characteristics of MFIS devices using HfSiON buffer layers","19th Intern. Sympo. on Integrated Ferroelectrics","19th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 4B-115-C",,,2007,May
"S.Fujisaki,H.Ishiwara,Y.Fujisaki","Low-voltage operation of ferroelectric poly(vinylidene fluoridetrifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes",,"Appl. Phys. Lett.",,"Vol. 90",,"p. 162902 (3pages)",2007,Apr.
"S.K.Singh,K.Maruyama,H.Ishiwara","The influence of La-substitution on the micro-structure and ferroelectric properties of chemical-solution-deposited BiFeO<sub>3</sub> thin films",,"J. Phys. D: Appl. Phys.",,"Vol. 40",,"pp. 2705-2709",2007,Apr.
"S.Fujisaki,Y.Fujisaki,H.Ishiwara","Large ferroelectricity of thin poly (vinylidene fluoride- trifluoroethylene) copolymer films suitable for non-volatile memory applications","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)",,,"No. I6.3",,2007,Apr.
"HIROSHI ISHIWARA","Recent researches for realizing high-density ferroelectric memories","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)","Spring Meeting of Mater. Res. Soc. (Sympo. I; Materials and Processes for Nonvolatile Memories)",,,"No. I8.5",,2007,Apr.
"高下裕一郎,白尾瑞基,矢野亜季,井端雅一,石原宏","強誘電体ゲートカーボンナノチューブトランジスタの作製と評価","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-9/?",,,2007,Mar.
"梅山将志,岡沢昴,石原宏,丸山研二","Bi<sub>2</sub>WO<sub>6</sub>添加Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub>を用いたMFIS-FETの動作特性","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-11/?",,,2007,Mar.
"李月剛,齋藤貢一,丸山研二,鉾宏真,有本由弘,石原宏","2T型強誘電体メモリのディスターブ特性の評価","2007年(平成19年）春季第54回応用物理学関係連合講演会","2007年(平成19年）春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-6/?",,,2007,Mar.
"藤崎寿美子,石原 宏","VDF/TrFE共重合体を用いたMFISダイオードの低電圧動作","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-7/?",,,2007,Mar.
"井端雅一,高下裕一郎,石原宏","カーボンナノチューブを用いた強誘電体ゲート電界効果トランジスタ","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-8/?",,,2007,Mar.
"岡沢昴,梅山将志,丸山研二,石原宏","低比誘電率Bi<sub>2</sub>WO<sub>6</sub>薄膜のMFISへの適用","2007年(平成19年)春季第54回応用物理学関係連合講演会","2007年(平成19年)春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-10/?",,,2007,Mar.
"池田武嗣,田渕良志明,田村哲朗,鉾宏真,有本由弘,石原宏","MFIS-FETを用いたNAND型強誘電体メモリ回路における書込みディスターブ","2007年(平成19年）春季第54回応用物理学関係連合講演会","2007年(平成19年）春季第54回応用物理学関係連合講演会",,"Vol. 29a-SV-5/?",,,2007,Mar.
"SINGH SUSHIL KUMAR,H.Ishiwara","Site engineering in chemical-solution-deposited Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films using Ce, Zr, Mn and Si atoms",,"J. Sol-Gel Sci. Technol.",,,,,2007,Feb.
"S.K.Singh,K.Maruyama,H.Ishiwara","Reduced leakage current in La and Ni codoped BiFeO<sub>3</sub> thin films",,"Appl. Phys. Lett.",,"Vol. 91",,"p. 112913 (3pages)",2007,
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-Bit Programming Technique for an MFIS-FET with a Pt/(Bi, Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si Substrate Structure",,"Integrated Ferroelectrics",,"Vol. 89",,"pp. 171-179",2007,
"kumar singh_sushil,HIROSHI ISHIWARA","Bottom electrodes dependence of ferroelectric properties in epitaxial BiFeO<sub>3</sub>/SrRuO<sub>3</sub>/SrTiO<sub>3</sub> structures",,"Integrated Ferroelectrics",,"Vol. 87",,"pp. 42-49",2007,
"S.K.Singh,K.Sato,K.Maruyama,H.Ishiwara","Cr-doping Effects to Electrical Properties of BiFeO<sub>3</sub> Thin Films Formed by Chemical Solution Deposition",,"Jpn. J. Appl. Phys.",,"Vol. 45, Part 2","No. 41","pp. L1087-L1089",2006,Oct.
"H.Ishiwara","Recent progress in ferroelectric memory technology","8th Intern. Conf. on Solid-State and Integrated Circuit Technology","8th Intern. Conf. on Solid-State and Integrated Circuit Technology",,,"No. C3.8 Proc. Part 2","pp. 713-716",2006,Oct.
"H.Ishiwara","Recent progress in ferroelectric memory technology",,"8th Intern. Conf. on Solid-State and Integrated Circuit Technology",,"Vol. Proc. Part 2","No. C3.8","pp. 713-716",2006,Oct.
"S.K.Singh,Y-K.Kim,H.Funakubo,H.Ishiwara","Epitaxial BiFeO<sub>3</sub> multiferroic thin films fabricated by chemical solution deposition","IUMRS Intern. Conf. in Asia","IUMRS Intern. Conf. in Asia",,"Vol. 6-O-15",,,2006,Sept.
"S.K.Singh,H.Ishiwara","Enhanced polarization and reduced leakage current in BiFeO<sub>3</sub> thin films fabricating by chemical solution deposition",,"J. Appl. Phys.",,"Vol. 100","No. 6","pp. 064102",2006,Sept.
"齋藤貢一,石原宏","シリケート添加によるSBT薄膜の比誘電率制御",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-4/II",,,2006,Aug.
"鉾宏真,田渕良志明,丸山研二,石原宏","SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>とHfSiONを強誘電体膜とバッファ層に用いたMFIS-FETの特性評価",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-6/II",,,2006,Aug.
"田渕良志明,長谷川聡志,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","弱電界におけるPt/(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/Ptキャパシタの疲労現象",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31p-V-15/II",,,2006,Aug.
"梅山将志,石原宏,丸山研二,田村哲朗","Pt/Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub>/HfO<sub>2</sub>/Si構造MFISダイオードにおけるバッファ層膜厚の最適化",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 31a-V-5/II",,,2006,Aug.
"Byung-Eun Park,Hiroshi Ishiwara","Characterization of Polyvinylidene fluoride thin films by sol-gel method",,"2006年(平成18年）秋季第67回応用物理学会学術講演会",,"Vol. 30p-V-20/II",,,2006,Aug.
"T.Furukawa,T.Kuroiwa,T.Sato,Y.Fujisaki,H.Ishiwara","Leakage current characteristics of Pt/Bi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub>/Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films",,"J. Appl. Phys.",,"Vol. 100","No. 1","pp. 014108",2006,July
"S.K.Singh,H.Ishiwara,K.Maruyama","Room temperature ferroelectric properties of Mn-substituted BiFeO<sub>3</sub> thin films deposited on Pt electrodes using chemical solution deposition",,"Appl. Phys. Lett.",,"Vol. 88","No. 26","pp. 262908 (3 pages)",2006,June
"K.Takahashi,K.Aizawa,H.Ishiwara","Optimum ferroelectric film thickness in metal-ferroelectric-insulator -semiconductor structures composed of Pt, (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>, HfO<sub>2</sub>, and Si",,"Jpn. J. Appl. Phys.",,"Vol. 45, Part 1","No. 6A","pp. 5098-5101",2006,June
"石原宏","トランジスタ型強誘電体メモリの現状と展望",,"応用物理",,"Vol. 75","No. 5","pp. 546-552",2006,May
"H.Ishiwara,S.K.Singh","Characteristics of BiFeO<sub>3</sub> thin films prepared by chemical solution deposition",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 9-561-I",,,2006,Apr.
"S.K.Singh,H.Ishiwara","Excellent Room-Temperature Ferroelectricity in Mn-substituted BiFeO<sub>3</sub> Thin Films Formed by Chemical Solution Deposition",,"Spring Meeting of Mater. Res. Soc. (Sympo. G; Science and Technology of Nonvolatile Memories)",,,"No. G3.3",,2006,Apr.
"S.K.Singh,H.Ishiwara,K.Maruyama","Site-engineering of BiFeO<sub>3</sub> thin films for obtaining ferroelectric properties at room temperature",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 6A-101-C",,,2006,Apr.
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-bit programming for MFIS-FET using Pt/(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/n-type Si structures",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 1-441-C",,,2006,Apr.
"S.K.Singh,Y-K.Kim,H.Kuwabara,H.Funakubo,H.Ishiwara","Strain effect due to the bottom electrodes in epitaxial BiFeO<sub>3</sub> films formed by chemical solution deposition",,"18th Intern. Sympo. on Integrated Ferroelectrics",,"Vol. 9-281-C",,,2006,Apr.
"H.Ishiwara","Ferroelectric FET Memory",,"ITRS workshop on Assessment of Options for Emerging Research Memory Devices",,,"No. 2-4",,2006,Apr.
"S.K.Singh,H.Ishiwara","Doping effect of rare earth ions to electric properties of BiFeO<sub>3</sub> thin films fabricated by chemical solution deposition",,"Jpn. J. Appl. Phys.",,"Vol. 45Part 1","No. 4B","pp. 3194-3197",2006,Apr.
"S.K.Singh,H.Ishiwara","Electrical properties of Pt/Bi<sub>3.45</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub>/Pt thin film capacitors tailored by cerium doping",,"J. Mater. Res.",,"Vol. 21","No. 4","pp. 988-994",2006,Apr.
"鉾宏真,田渕良志明,田村哲朗,丸山研二,石原宏","HfSiON膜バッファ層を用いたPt/(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfSiON/Si構造の強誘電体ゲートFETの特性",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-7/II",,,2006,Mar.
"小原秀一郎,田村哲朗,丸山研二,石原宏","Sr<sub>2</sub>(Ta,Nb)<sub>2</sub>O<sub>7</sub>/HfO<sub>2</sub>/Si構造デバイスの作製と評価",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-12/II",,,2006,Mar.
"林大祐,S.K.Singh,大島憲昭,丸山研二,石原宏","PtならびにRu電極上へのMnドープBiFeO<sub>3</sub>膜の形成",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 26p-S-5/II",,,2006,Mar.
"田渕良志明,長谷川聡志,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","MFIS-FETのメモリウィンドウ測定による分極状態の評価",,"2006年(平成18年)春季第53回応用物理学関係連合講演会",,"Vol. 25p-S-8/II",,,2006,Mar.
"S.K.Singh,Y-K.Kim,H.Funakubo,H.Ishiwara","Epitaxial BiFeO<sub>3</sub> thin films fabricated by chemical solution deposition",,"Appl. Phys. Lett.",,"Vol. 88","No. 16","pp. 162904 (3pages)",2006,
"S.K.Singh,K.Maruyama,H.Ishiwara","Room temperature ferroelectric properties of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>- and (Bi, La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>-incorporated BiFeO<sub>3</sub> thin films",,"Integrated Ferroelectrics",,"Vol. 84",,"pp. 115-120",2006,
"Y.Tabuchi,K. Aizawa,T. Tamura,K. Takahashi,H. Hoko,K. Kato,Y. Arimoto,H. Ishiwara","Characterization of (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/p-Type Si Structures for MFIS-FeRAM Application",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 211-218",2006,
"kumar singh_sushil,HIROSHI ISHIWARA","Excellent room-temperature ferroelectricity in Mn-substituted BiFeO<sub>3</sub> thin films formed by chemical solution deposition",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 933",,"p. G03-03 (5pages)",2006,
"kumar singh_sushil,HIROSHI ISHIWARA","Improved fatigue endurance in Mn-doped Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films",,"Solid State Communications",,"Vol. 140",,"pp. 430-434",2006,
"kumar singh_sushil,S.K.Singh   H.Ishiwara","Micro-structure and ferroelectric properties of BiFeO<sub>3</sub> thin films formed on Pt-coated R-plane sapphire substrates",,"J. Electrocramics",,"Vol. 16",,"pp. 553-556",2006,
"S.K.Singh,H.Ishiwara","Micro-structure and ferroelectric properties of BiFeO<sub>3</sub> thin films formed on Pt-coated R-plane sapphire substrates",,"J. Electrocramics",,"Vol. 16",,"pp. 553-556",2006,
"Y.Tabuchi,K.Aizawa,T.Tamura,K.Takahashi,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Characterization of (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/p-type Si structures for MFIS-FeRAM application",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 211-218",2006,
"H.Hoko,C.Aoki,Y.Tabuchi,T.Tamura,K.Maruyama,Y.Arimoto,H.Ishiwara","Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 105-111",2006,
"S.K.Singh,H.Ishiwara","Defect engineering for control of polarization fatigue in Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin film capacitors",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 25-35",2006,
"H.Ishiwara","Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 3-13",2006,
"S.K.Singh,H.Ishiwara","Enhanced electrical properties in Mn-doped Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films",,"Mater. Res. Soc. Symp. (Ferroelectric Thin Films XIII) Proc.",,"Vol. 902E",,"pp. T03-52.1- T03-52.6",2006,
"S.K.Singh,H.Ishiwara","Ferroelectric properties enhancement in niobium-substituted Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films prepared by chemical solution route",,"Thin Solid Films",,"Vol. 497",,"pp. 90-95",2006,
"S.K.Singh,R.Ueno,H.Funakubo,H.Uchida,S.Koda,H.Ishiwara","Dependence of ferroelectric properties on thickness of BiFeO<sub>3</sub> thin films fabricated by chemical solution deposition",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 12","pp. 8525-8527",2005,Dec.
"S.K.Singh,H.Ishiwara","Enhanced electrical properties in Mn-doped Bi<sub>3.35</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin film",,"Fall Meeting of Mater. Res. Soc. (Sympo. T ; Ferroelectric Thin Films XIII)",,,"No. T3.52",,2005,Nov.
"S.K.Singh,H.Ishiwara","Improved insulating properties in La-doped BiFeO<sub>3</sub> films fabricated by chemical solution deposition",,"Fall Meeting of Mater. Res. Soc. (Sympo. U ; Multiferroic materials)",,,"No. U5.7",,2005,Nov.
"Y.Tabuchi,S.Hasegawa,T.Tamura,H.Hoko,K.Kato,Y.Arimoto,H.Ishiwara","Multi-bit programming for 1T-FeRAM by local polarization method",,"Intern. Conf. on Solid State Devices and Materials",,"Vol. H-8-4",,"pp. Ext. Abstracts pp.1038-1039",2005,Sept.
"S.K.Singh,H.Ishiwara","Bismuth ferrite thin films for advanced FeRAM devices",,"Intern. Conf. on Solid State Devices and Materials",,"Vol. H-8-3",,"pp. Ext. Abstracts pp.1036-1037",2005,Sept.
"小原秀一郎,田村哲朗,石原宏","Pt/(Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>)<sub>x</sub>(Bi<sub>1.05</sub>FeO<sub>3</sub>)<sub>(1-x)</sub>/Pt構造デバイスの評価",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-6",,,2005,Sept.
"田渕良志明,長谷川聡史,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si構造を用いたMFIS-FETの多値メモリ化の検討",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-7",,,2005,Sept.
"長谷川聡史,田渕良志明,田村哲朗,加藤一実,有本由弘,石原宏","Pt/BNT((Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>)/HfO<sub>2</sub>/Siキャパシタのメモリ特性におけるBNT膜厚の影響",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9a-L-8",,,2005,Sept.
"林大祐,S. K. Singh,小菅博明,大島憲明,石原宏","CVD法により形成したRu電極を用いたBiFeO<sub>3</sub>キャパシタの評価",,"2005年（平成17年）秋季第66回応用物理学会学術講演会",,"Vol. 9p-L-12",,,2005,Sept.
"S.Ohara,K.Aizawa,H.Ishiwara","Ferroelectric properties of Pt/Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>/Pt and Pt/Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>/HfO<sub>2</sub>/Si structures",,"Jpn. J. Appl. Phys",,"Vol. 44, Part 1","No. 9A","pp. 6644-6647",2005,Sept.
"K.Takahashi,K.Aizawa,B-E.Park,H.Ishiwara","Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO<sub>2</sub> buffer layers",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 8","pp. 6218-6220",2005,Aug.
"K.Aizawa,H.Ishiwara","Reduction of pyrochlore phase and pronounced improvemrnt of ferroelectric properties in ultrathin SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> films derived from Bi-rich sol-gel solution",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 8","pp. 6221-6223",2005,Aug.
"S.K.Singh,H.Ishiwara","Reduced Leakage Current in BiFeO<sub>3</sub> Thin Films on Si Substrates Formed by a Chemical Solution Method",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 23","pp. L734-L736",2005,May
"石原宏","トランジスタ型強誘電体メモリ開発の現状と将来展望",,"電子情報通信学会誌",,"Vol. 88","No. 4","pp. 266-271",2005,Apr.
"H-S.Kim,S.Yamamoto,T.Ishikawa,T.Fuchikami,H.Ohki,H.Ishiwara","Fabrication and characterization of 1k-bit 1T2C-type ferroelectric memory cell array",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 4B","pp. 2715-2721",2005,Apr.
"H. Ishiwara","Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-1-I",,2005,Apr.
"S. K. Singh,H. Ishiwara","Defect engineering for control of polarization fatigue in Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> film capacitors",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-4-C",,2005,Apr.
"H. Hoko,C. Aoki,Y. Tabuchi,T. Tamura,K. Maruyama,Y. Arimoto,H. Ishiwara","Electrical properties of Pt/BLT/HfSiON/Si structure for 1T-type ferroelectric memory",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-20-P",,2005,Apr.
"Y. Tabuchi,K. Aizawa,T. Tamura,K. Takahashi,H. Hoko,K. Kato,Y. Arimoto,H. Ishiwara","Characterization of (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/p-type Si structures for MFIS-FeRAM application",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 3-33-P",,2005,Apr.
"S. Ohara,K. Aizawa,H. Ishiwara","Fabrication and characterization of metal-ferroelectric- insulator-semiconductor devices with Pt/Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>/HfO<sub>2</sub>/Si structures",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 2-14-C",,2005,Apr.
"S. K. Singh,H. Funakubo,H. Uchida,H. Ishiwara","Structural and electrical properties of BiFeO<sub>3</sub> thin films",,"17th Intern. Sympo. on Integrated Ferroelectrics",,,"No. 7-5-C",,2005,Apr.
"長谷川聡史,田渕良志明,加藤一実,田村哲朗,有本由弘,石原宏","(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/CVD HfO<sub>2</sub>構造を用いたMFISダイオードの作製と評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-9",,,2005,Mar.
"高橋憲弘,會澤康治,田村哲朗,有本由弘,石原宏","(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/CVD-HfO<sub>2</sub>/p-Si 構造の作製と電気的特性評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-3",,,2005,Mar.
"小原秀一郎,會澤康治,石原宏","Pt/Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>/Pt構造とPt/Pb<sub>5</sub>Ge<sub>3</sub>O<sub>11</sub>/HfO<sub>2</sub>/Si構造デバイスの評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-4",,,2005,Mar.
"田渕良志明,會澤康治,田村哲朗,高橋憲弘,鉾宏真,加藤一実,有本由弘,石原宏","(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/p-type Si 構造を用いたMFIS-FETの特性評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-12",,,2005,Mar.
"林大祐,小菅博明,大島憲昭,石原宏","CVD Ru薄膜を下部電極として用いたMo添加BLT強誘電体キャパシタの評価",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 29a-P1-1",,,2005,Mar.
"H.Ohki,Y.Fujisaki,H.Ishiwara","Characterization of Si- and Mo-codoped Bi<sub>3.35</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> ferroelectric thin films",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 3","pp. 1329- 1332",2005,Mar.
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Fatigueless ferroelectric capacitors with ruthenium bottom and top electrodes formed by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 12","pp. L378-L380",2005,Mar.
"會澤康治,田村哲朗,有本由弘,石原宏","SBT/HfO<sub>2</sub>/Si構造デバイスにおけるデータ保持特性の温度依存性",,"2005年(平成17年)春季第52回応用物理学関係連合講演会",,"Vol. 31a-P4-2",,,2005,Mar.
"H.Ohki,X.Wang,H.Ishiwara","Improvement of ferroelectric properties in Mo-substituted Bi<sub>3.35</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> films by optimization of heating rate",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 1","No. 2","pp. 964- 967",2005,Feb.
"S.Kikuchi,H.Ishiwara","Improvement of ferroelectric properties in RF-magnetron- sputtered SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films by addition of Si atoms",,"Jpn. J. Appl. Phys.",,"Vol. 44, Part 2","No. 4","pp. L161- L163",2005,Jan.
"B-E.Park,K.Takahashi,H.Ishiwara","Fabrication and electrical properties of Pt/ (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si structures",,"J. Korean Phys. Soc.",,"Vol. 46","No. 1","pp. 346-349",2005,Jan.
"X.Wang,H.Ishiwara","Properties of ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films derived by the sol-gel method",,"J. Crystal Growth",,"Vol. 285",,"pp. 103-110",2005,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Improvement of data readout disturbance effect in 1T2C-type ferroelectric memory",,"Integrated Ferroelectrics",,"Vol. 67",,"pp. 271-280",2005,
"K.Aizawa,S.Kobayashi,H.Ishiwara,K.Suzuki,K.Kato","Ferroelectric-gate field effect transistors using (Y,Yb)MnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si(111) structures for 1T-type FeRAMs",,"Integrated Ferroelectrics",,"Vol. 65",,"pp. 169-174",2005,
"K.Aizawa,Y.Kawashima,H.Ishiwara","Long time data retention and a mechanism in ferroelectric-gate field effect transistors with HfO<sub>2</sub> buffer layer",,"Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.",,"Vol. 830",,"pp. D2.9.1- D2.9.6",2005,
"Y.Fujisaki,H.Ishiwara","Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)",,"Mater. Res. Soc. Symp. (Materials and Processes for Nonvolatile Memories) Proc.",,"Vol. 830",,"pp. D2.1.1- D2.1.12",2005,
"S.Yamamoto,T.Ishikawa,T.Fuchikami,H-S.Kim,K.Aizawa,B-E.Park,T.Furukawa,H.Ohki,S.Kikuchi,H.Hoko,H.Ishiwara","Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array",,"Integrated Ferroelectrics",,"Vol. 67",,"pp. 281-286",2005,
"Y.Tabuchi,B-E.Park,K.Aizawa,Y.Kawashima,K.Takahashi,K.Kato,Y.Arimoto,H.Ishiwara","Formation of ferroelectric (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films on HfO<sub>2</sub>/Si(100) structures for MFIS-type ferroelectric memory applications",,"Integrated Ferroelectrics",,"Vol. 65",,"pp. 125-134",2005,
"S.K.Singh,H.Funakubo,H.Uchida,H.Ishiwara","Structural and electrical properties of BiFeO<sub>3</sub> thin films",,"Integrated Ferroelectric",,"Vol. 76",,"pp. 139-146",2005,
"K.Kato,K.Suzuki,K.Tanaka,D.Fu,K.Nishizawa,T.Miki,H.Ishiwara","Ferroelectric characteristics of silicate-bound (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films",,"Appl. Phys. A",,"Vol. 80",,"pp. 271-273",2005,
"K.Aizawa,B-E.Park,Y.Kawashima,K.Takahashi,H.Ishiwara","Effect of Ferroelectric/HfO<sub>2</sub>/Si Structures on Electrical Properties of Ferroelectric-gate FETs",,"Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston",,,"No. D2.9",,2004,
"K.Aizawa,H.Ishiwara","Low voltage operation of ferroelectric capacitors using Sr-deficient and praseodymium-substituted strontium bismuth tantalete ultra thin films",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 211-214",2004,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Leakage current suppression of Pt/Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub>/Ru capacitors by post-annealing of Ru films",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 171-176",2004,
"Y.Kawashima,H.Ishiwara","Formation of ultra thin SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> films using protective layers",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 155-161",2004,
"B-E.Park,H.Ishiwara","Fabrication and characterization of (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films using LaAlO<sub>3</sub> buffer layers for MFIS structures",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 141-147",2004,
"T.Tamura,H.Hoko,Y.Arimoto,H.Ishiwara","Fabrication of sol-gel thin films of silicate- doped PZT",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 105-107",2004,
"H.Ohki,X.Wang,H.Ishiwara","Ferroelectric properties of Mo-doped Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> films",,"Integrated Ferroelectrics",,"Vol. 61",,"pp. 37-42",2004,
"S.Kim,S.Yamamoto,H.Ishiwara","Improved data disturbance effects in 1T2C-type ferroelectric memory array",,"Jpn. J.Appl. Phys.",,"Vol. 53","No. 5A","pp. 2558-2563",2004,
"HIROSHI ISHIWARA","Recent progress in FET-type ferroelectric memories",,"Proc. of 1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing (Electrochem. Soc. Pennington, 2004)",,,,"pp. 195-205",2004,
"Y.Fujisaki,H.Ishiwara","Ferroelectric thin film depositions for various types of FeRAMs (ferroelectric random access memories)",,"Fall Meeting of Mater. Res. Soc. (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston",,,"No. D2.1",,2004,
"S.K.Singh,H.Ishiwara","Thickness dependence properties of Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin film capacitors",,"National Seminar on Ferroelectrics and Dielectrics, Delhi",,,"No. 67","pp. 159-162",2004,
"HIROSHI ISHIWARA","Recent progress in FET-type ferroelectric memories",,"1^st^ Intern. Sympo. on Dielectrics for Nanosystems : Materials Science, Processing, Reliability, and Manufacturing in 206^th^ Meeting of Electrochem. Soc. Honolulu",,,"No. 870",,2004,
"H-S.Kim,S.Yamamoto,T.Ishikawa,H.Ishiwara","Fabrication and characteriza- tion of 1k-bit 1T2C-type ferroelectric memory cell array",,"Intern. Conf. on Solid State Devices and Materials, Tokyo",,,"No. D-1-3","pp. 54-55",2004,
"K.Takahashi,B-E.Park,K.Aizawa,H.Ishiwara","30-day-long data retention in ferroelectric-gate FET’s with HfO<sub>2</sub> buffer layers",,"Intern. Conf. on Solid State Devices and Materials, Tokyo",,,"No. D-1-2","pp. 52-53",2004,
"HIROSHI ISHIWARA","Current status and prospect of FET-type ferroelectric memories",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-04-I",,2004,
"K.Takahashi,B-E.Park,H.Ishiwara","Electrical properties of Pt/SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/HfO<sub>2</sub>/Si structure for a 1T-type ferroelectric memory",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-24-P",,2004,
"B-Y.Tan,K.Iseki,H.Ohki,Y.Fujisaki,H.Ishiwara","Al<sub>2</sub>O<sub>3</sub> hydrogen barrier encapsulation layer for FeRAM",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-20-P",,2004,
"Y.Tabuchi,B-E.Park,K.Takahashi,K.Kato,Y.Arimoto,H.Ishiwara","Formation of ferroelectric (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films on HfO<sub>2</sub>/Si(100) structures for MFIS-type ferroelectric memory applications",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-19-P",,2004,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Improvement of data readout disturbance effects in 1T2C-type ferroelectric memory array",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-02-P",,2004,
"S.Yamamoto,T.Ishikawa,T.Fuchikami,H-S.Kim,K.Aizawa,B-E.Park,T.Furukawa,H.Ohki,S.Kikuchi,H.Hoko,H.Ishiwara","Fabrication of 1k-bit 1T2C-type ferroelectric memory cell array",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 5-01-P",,2004,
"C.Aoki,H.Hoko,B-E.Park,H.Ishiwara","Electrical properties of Hf<sub>x</sub>Al<sub>y</sub>O/Si and Bi<sub>3.45</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub>/Hf<sub>x</sub>Al<sub>y</sub>O/Si structures",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 12-18-C",,2004,
"K.Aizawa,S.Kobayashi,H.Ishiwara,K.Suzuki,K.Kato","Ferroelectric-gate field effect transistors using (Y,Yb)MnO<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub>/Si(111) structures for 1T-type FeRAMs",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-10-C",,2004,
"B-J.Koo,Y.Hoshide,H.Ishiwara","Long-term retention characteristics of 1T2C-type ferroelectric memory",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 11-06-C",,2004,
"B-E.Park,K.Takahashi,H.Ishiwara","Fabrication and characterization of Pt/(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/ HfO<sub>2</sub>/Si(100) structures",,"16th Intern. Sympo. on Integrated Ferroelectrics, Gyeongiu",,,"No. 12-03-P",,2004,
"石原宏 監修　","強誘電体メモリーの新展開",,"シーエムシー出版","シーエムシー出版",,,,2004,
"石原宏","トランジスタ型強誘電体メモリの新展開",,"第66回半導体･集積回路技術シンポジウム講演論文集","第66回半導体･集積回路技術シンポジウム講演論文集",,,"pp. 46-49",2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,加藤一実,有本由弘,石原宏","(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si(100) 構造の作製と評価",,"電子情報通信学会技術研究報告","電子情報通信学会技術研究報告",,"No. SDM2003-232",,2004,
"Y. Arimoto,H. Ishiwara","Current status of ferroelectric random-access memory",,"MRS Bulletin","MRS Bulletin","Vol. 29","No. 11","pp. 823-828",2004,
"石原宏","次世代強誘電体メモリへの期待",,"化学工業","化学工業","Vol. 55","No. 1","pp. 20-25",2004,
"H.Ishiwara,M.Okuyama,Y.Arimoto eds.","Ferroelectric Random Access Memories - Fundamentals and Applications",,"Springer-Verlag","Springer-Verlag",,,,2004,
"T.Kijima,H.Ishiwara","“Part I, Novel Si-substituted ferroelectric films”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto",,"Springer-Verlag","Springer-Verlag",,,"pp. 17-30",2004,
"H.Ishiwara","“Part IV, The FET-type FeRAM”, Ferroelectric Random Access Memories - Fundamentals and Applications, eds. by H.Ishiwara, M.Okuyama, and Y.Arimoto",,"Springer-Verlag","Springer-Verlag",,,"pp. 233-251",2004,
"タンブンイー,井関邦江,大木博,藤崎芳久,石原宏","Radical-Si<sub>3</sub>N<sub>4</sub>/高誘電率バッファー層を用いたMFIS?FETの作製と評価",,"第51回応用物理学関連連合講演会",,,"No. 31ｐ-ZL-3",,2004,
"キムヒンス,山本修一郎,石原宏","1T2C型強誘電体メモリアレイにおけるV/4ルールデータ書き込み法の提案",,"第51回応用物理学関連連合講演会",,,"No. 31p-ZL-2",,2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,加藤一実,有本由弘,石原宏","(Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si(100)構造MFIS型強誘電体メモリの作製とデータ保持特性の評価",,"第51回応用物理学関連連合講演会",,,"No. 31a-ZL-1",,2004,
"會澤康治,川島良仁,高橋憲弘,朴炳垠,石原宏","SBT/HfO<sub>2</sub>構造を用いたMFIS DiodeおよびFETの作製と評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-19",,2004,
"高橋憲弘,朴炳垠,川島良仁,田渕良志明,會澤康治,石原宏","(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>構造を用いたMFISダイオードおよび１T型FETの電気的特性評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-18",,2004,
"星出裕亮,具本宰,有本由弘,石原宏","均一なキャパシタ特性を持つ1T2C型強誘電体メモリの作製",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-17",,2004,
"藤崎芳久,井関邦江,石原宏","減圧仮焼成プロセスによるゲルゾルBLT薄膜の特性改善（２）",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-10",,2004,
"大木博,石原宏","Si添加Bi<sub>3.35</sub>La<sub>0.75</sub>(Ti<sub>1-x</sub>Mo<sub>x</sub>)<sub>3</sub>O<sub>12</sub>強誘電体薄膜の特性評価",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-4",,2004,
"大木博,Xusheng Wang,石原宏","MoドープBi<sub>4-x</sub>La<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub>薄膜の強誘電体特性に及ぼす昇温レートの効果",,"第51回応用物理学関連連合講演会",,,"No. 30p-ZL-3",,2004,
"菊池真,石原宏","FRマグネトロンスパッタ法によるSi添加SiBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>強誘電体薄膜の作製（３）",,"第51回応用物理学関連連合講演会",,,"No. 30a-ZL-3",,2004,
"高橋憲弘,會澤康治,田村哲朗,有本由弘,石原宏","(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/CVD HfO<sub>2</sub>構造を用いたMFISダイオードの電気的特性評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-10",,2004,
"會澤康治,高橋憲弘,田村哲朗,有本由弘,石原宏","CVD HfO<sub>2</sub>薄膜をバッファ層に用いたSBT/HfO<sub>2</sub>/p-Si構造の作製と評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-8",,2004,
"キムヒンス,山本修一郎,石川徹,石原宏","1T2C型強誘電体メモリアレイの作製と評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-7",,2004,
"B-E.Park,K.Takahashi,H.Ishiwara","Five-day-long ferroelectric memory effect in Pt/(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si structures",,"Appl. Phys. Lett.",,"Vol. 85","No. 19","pp. 4448-4450",2004,
"K.Aizawa,B-E.Park,Y.Kawashima,K.Takahashi,H.Ishiwara","Impact of HfO<sub>2</sub> buffer layers on data retention characteristics of ferroelectric-gate field effect transistors",,"Appl. Phys. Lett.",,"Vol. 85","No. 15","pp. 3199-3201",2004,
"Y.Fujisaki,K.Iseki,H.Ishiwara","Long retention performance of a MFIS device achieved by introducing high-k Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub>/Si buffer layer",,"Mater. Res. Soc. Sympo. Proc. (Ferro- electric Thin Films XII)",,"Vol. 784",,"pp. C(E)9.6.1-C(E)9.6.11",2004,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Fabrication of Ru/Bi<sub>4-X</sub>La<sub>X</sub> Ti<sub>3</sub>O<sub>12</sub>/Ru ferroelectric capacitor structure using a Ru film deposited by metalorganic chemical vapor deposition",,"Mater. Res. Soc. Sympo. Proc. (Ferroelectric Thin Films XII)",,"Vol. 784",,"pp. C7.7.1-C7.7.6",2004,
"石原宏","強誘電体メモリーの新展開　第1章　強誘電体メモリーの現状と次世代型への期待",,"シーエムシー出版","シーエムシー出版",,,,2004,
"青木千恵子,石原宏,鉾宏真","HfSiON非晶質バッファ層を用いたMFIS型構造の特性",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-2",,2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","(Bi, Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>/HfO<sub>2</sub>/Si(100)構造MFIS型強誘電体メモリの特性評価",,"第65回応用物理学会学術講演会",,,"No. 4a-Y-9",,2004,
"青木千恵子,鉾宏真,朴炳垠,石原宏","HfO<sub>2</sub>系非晶質バッファ層を用いたMFIS(metal-ferroelectric-insulator-semiconductor)構造の特性",,"第51回応用物理学関連連合講演会",,,"No. 31ｐ-ZL-1",,2004,
"金?秀,山本修一郎,石川徹,大木博,石原宏","1T2C型強誘電体メモリアレイの作製と評価",,"第65回応用物理学会学術講演会講演予稿集",,"Vol. 2",,"pp. 496",2004,
"S.Kikuchi,H.Ishiwara","Preparation of Bi<sub>2</sub>SiO<sub>5-</sub>SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> ferroelectric thin films by RF magnetron sputtering",,"Mater. Res. Soc. Sympo. Proc.",,"Vol. 748",,"pp. 117-122",2003,
"K.Aizawa,H.Ishiwara","Praseodymium-substituted strontium bismuth tantalate films with saturated remanent polarization at 1V",,"Jpn. J. Appl. Phys.",,"Vol. 42","No. 7B","pp. 840-842",2003,
"K.Kato,H.Ishiwara","Effects of SiO<sub>2-</sub>based additives on Bi-based layer-structured ferroelectrics",,"Key Engineering Materials",,"Vol. 248",,"pp. 41-44",2003,
"田渕良志明,田村哲朗,石原宏","Biバッファ層を用いたシリケート添加BLT薄膜の特性評価",,"第64回応用物理学会学術講演会",,,"No. 30p-V-14",,2003,
"S.Yamamoto,T.Ishikawa,T.Fuchigami,T.Furukawa,K.Aizawa,H.Ohki,S.Kikuchi,B-E.Park,H.Hoko,T.Kuroiwa,H-S.Kim,B-J.Koo,H.Isjiwara,HIROSHI ISHIWARA","Fabrication of 1T2C-type ferroelectric memory array with sense amplifiers",,"10th European Meeting on Ferroelectricity",,,"No. S03-18",,2003,
"Y.Idemoto,T.Miyahara,N.Koura,T.Kijima,H.Ishiwara","Crystal structure and ferro- electric properties of (Bi,La)<sub>4</sub>(Ti,Si)<sub>3</sub>O<sub>12</sub> as a bulk ferroelectric material",,"Solid State Communications",,"Vol. 128",,"pp. 255-259",2003,
"石原 宏","第6版 化学便覧、応用化学編 II編 7章　電子・光材料プロセス技術",,"日本化学会編、丸善","日本化学会編、丸善",,,,2003,
"H.Kohlstedt,H.Ishiwara","Part III, Chap.14, Ferroelectric field effect transistors ed. by R.Waser Nanoelectronics and Information Technology - Advanced Electronic Materials and Novel Devices",,"Wiley-VCH, Weinheim","Wiley-VCH, Weinheim",,,"pp. 387-405",2003,
"石原 宏","「次世代エレクトロニクス薄膜技術」第10章　強誘電体薄膜の作製とメモリ素子への応用",,"シーエムシー出版","シーエムシー出版",,,"pp. 229-253",2003,
"金&#27883;秀､山本修一郎､石原宏","1T2C型強誘電体メモリにおけるデータディスターブの解析と低減法の提案",,"電子情報通信学会技術研究報告",,,"No. SDM2002-267",,2003,
"藤崎芳久,井関邦江,石原宏","減圧仮焼成プロセスを用いたBLT強誘電体薄膜の大幅特性向上",,"電子情報通信学会技術研究報告",,,"No. SDM2002-271",,2003,
"藤崎芳久,井関邦江,石原宏","乾燥ゲル構造の最適化によるBLT薄膜の強誘電性向上",,"電気学会，電子材料研究会資料",,,"No. EFM-03-15",,2003,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Operation simulation of an 8F<sup>2</sup> 1T2C-type ferroelectric memory array with a revised data writing method",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 4.1.7-C",,2003,
"B.J.Koo,H.Ishiwara","Fabrication and characterization of gate-connected 1T2C-type ferroelectric memory with paired Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> (BLT) capacitors",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 4.1.8-C",,2003,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> capacitors",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 8.2.2-C",,2003,
"T.Ishikawa,S.Yamamoto,T.Fuchikami,T.Furukawa,K.Aizawa,B-E.Park,S.Kikuchi,H.Ohki,H.Hoko,H.Ishiwara","Fabrication of 1T2C-type ferroelectric memory cell array",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 4.3.1-P",,2003,
"B-E.Park,H.Ishiwara","Formation of silicate-added (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films on LaAlO<sub>3</sub>/Si structures",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 10.3.9-P",,2003,
"B-E.Park,H.Ishiwara","Retention characteristics on (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films on Si(100) substrates using LaAlO<sub>3</sub> buffer layers",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 10.3.10-P",,2003,
"H.Ohki,H.Ishiwara","Characterization of BLT films formed by using a flash-annealing process on Pt/(Cr,Ti)N/TiN/Ti bottom electrode",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 10.3.14-P",,2003,
"K.Iseki,Y.Fujisaki,H.Ishiwara","Improvement of crystallinity in sol-gel derived BLT by optimizing dry-gel",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 10.1.6-C",,2003,
"K.Kato,H.Ishiwara","Address of SiO<sub>2</sub>-based additives in Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 10.2.6-I",,2003,
"S.Kikuchi,H.Ishiwara","Preparation of Bi<sub>2</sub>SiO<sub>5</sub>-SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> ferroelectric thin films by RF magnetron sputtering",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 11.1.7-C",,2003,
"Y.Fjisaki,K.Iseki,H.Ishiwara","Elimination of charge states in high-k Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> stacked insulator using nitrogen radicals",,"15th Intern. Sympo. on Integrated Ferroelectrics, Colorado Springs",,,"No. 5.2.5-C",,2003,
"B-E.Park,H.Ishiwara","Formation of LaAlO<sub>3</sub>  films on Si(100) substrates using molecular beam deposition",,"Jpn. J. Appl. Phys.",,"Vol. 82","No. 8",,2003,
"Y.Fjisaki,K.Iseki,H.Ishiwara","Significant enhancement of Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> thin films achieved by optimizing dry gel structure during sol-gel process",,"Sympo. on Polar Oxides &#8211; Properties, Characterization and Imaging, Capri",,,"No. P3",,2003,
"E.Tokumitsu,M.Kishi,K.Iseki,Y.Fujisaki,H.Ishiwara","Ferroelectric-gate structures using ferroelectric (Sr,Sm)Bi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> films with Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> buffer layer",,"2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices",,,,,2003,
"T.Tamura,H.Hoko,Y.Arimoto,H.Ishiwara","Fabrication of sol-gel thin films of silicate doped PZT",,"10th European Meeting on Ferroelectricity",,,"No. S07-F06",,2003,
"S.Kikuchi,H.Ishiwara","Preparation of Si-added SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> ferroelectric thin films by RF magnetron sputtering at high temperature",,"10th European Meeting on Ferroelectricity",,,"No. S18-6",,2003,
"B-E.Park,H.Ishiwara","Fabrication and characterization of (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films using LaAlO<sub>3</sub> buffer layers for MFIS structures",,"10th European Meeting on Ferroelectricity",,,"No. S18-8",,2003,
"H.Ohki,X.Wang,H.Ishiwara","Ferroelectric properties of Mo-doped Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> films",,"10th European Meeting on Ferroelectricity",,,"No. S03-28",,2003,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Leakage current suppression of Pt/ Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> /Ru capacitors by post-annealing of Ru films",,"10th European Meeting on Ferroelectricity",,,"No. S18-5",,2003,
"T.Furukawa,T.Kuroiwa,Y.Fujisaki,T.Sato,H.Ishiwara","Chemical vapor deposition of Ru bottom electrode for ferroelectric Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> capacitors",,"Integrated Ferroelectrics",,"Vol. 59",,"pp. 1437-1443",2003,
"B-J.Koo,H.Ishiwara","Fabrication and characterization ofgate-connected 1T2C-type ferroelectric memory with paired Bi<sub>4-X</sub>La<sub>X</sub>Ti<sub>3</sub>O<sub>12</sub> capacitors",,"Integrated Ferroelectrics",,"Vol. 56",,"pp. 1055-1064",2003,
"H-S.Kim,S.Yamamoto,H.Ishiwara","Operation simulation of an 8F<sup>2</sup> 1T2C-type ferroelectric memory array with a revised data writing method",,"Integrated Ferroelectrics",,"Vol. 56",,"pp. 1045-1054",2003,