"J. Molina,T. Mimura,Y. Nakamura,T. Shimizu,H. Funakubo,I. Fujiwara,T. Hoshii,S. Ohmi,A. Hori,H. Wakabayashi,K. Tsutsui,K. Kakushima","Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance","2020 IMW (The 12th International Memory Workshop)",,,,,,2020,May
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 59",,"pp. SGGB06-1-6",2020,Feb.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing","Solid State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"Joel Molina-Reyes,Haruki Iwatsuka,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing","VLSI 2019 (2019 Symposia on VLSI Technology and Circuits)",,,,,,2019,June
"J. Molina,H. Iwatsuka,T. Hoshii,S. Ohmi,H. Funakubo,A. Hori,I. Fujiwara,H. Wakabayashi,K. Tsutsui,K. Kakushima","Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode","235th ECS Meeting",,,,,,2019,May
"Kudoh, Sohya,Shun-ichiro OHMI","Influence of Si(100) surface flattening process on nonvolatile memory characteristics of Hf-based MONOS structures","75th Annual Device Research Conference (DRC)","2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)","IEEE",,,,2017,
"Shun-ichiro OHMI,Hiroki, Mizuha,Maeda, Yasutaka","Narrow Line Crystallization of Rubrene Thin Film Enhanced by Yb Interfacial Layer for Single Crystal OFET Application","75th Annual Device Research Conference (DRC)","2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC)","IEEE",,,,2017,
"Shun-ichiro OHMI,Liu, Yeyuan","In-situ formation of Hf-based MONOS structures for non-volatile memory applications",,"IEICE ELECTRONICS EXPRESS","IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG","Vol. 12","No. 24",,2015,Dec.
"工藤 聡也,大見俊一郎","開放型熱処理装置を用いたSi表面平坦化プロセスの検討 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","一般社団法人電子情報通信学会","Vol. 114","No. 255","pp. 13-17",2014,Oct.
"前田 康貴,大見俊一郎,後藤 哲也,大見 忠弘","窒素添加LaB?薄膜のデバイス応用に関する検討 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","一般社団法人電子情報通信学会","Vol. 113","No. 247","pp. 27-31",2013,Oct.
"Han, H.S.,Han, D.H.,Shun-ichiro OHMI","Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering",,"Electronics Letters",,"Vol. 49","No. 7","pp. 493-495",2013,
"Han, Huiseong,Shun-ichiro OHMI","Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering",,"IEICE ELECTRONICS EXPRESS","IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG","Vol. 9","No. 16","pp. 1329-1334",2012,
"大見俊一郎","混晶化によるPtSiのコンタクト抵抗低減に関する検討",,"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","一般社団法人電子情報通信学会","Vol. 111","No. 249","pp. 59-62",2011,Oct.
"Ishikawa, J.,Gao, J.,Shun-ichiro OHMI","Work function modulation of PtSi by alloying with Yb",,"IEICE Electronics Express",,"Vol. 8","No. 1","pp. 33-37",2011,
"Shun-ichiro OHMI,Gao, J.","Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor",,"IEICE Electronics Express",,"Vol. 8","No. 20","pp. 1710-1715",2011,
"Sano, T.,Shun-ichiro OHMI","Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations",,"IEICE Electronics Express",,"Vol. 8","No. 18","pp. 1492-1497",2011,
"Gao, J.,Ishikawa, J.,Shun-ichiro OHMI","A study on precise control of PtSi work function by alloying with Hf",,"IEICE Electronics Express",,"Vol. 8","No. 1","pp. 45-49",2011,
"Liao, M.,Ishiwara, H.,Shun-ichiro OHMI","Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator",,"IEICE Electronics Express",,"Vol. 8","No. 18","pp. 1461-1466",2011,
"佐野 貴洋,大見俊一郎","ECRスパッタ法によるHfN/HfSiON積層構造の in-situ 形成",,"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","一般社団法人電子情報通信学会","Vol. 110","No. 241","pp. 57-60",2010,Oct.
"高 峻,石川 純平,大見俊一郎","Hf混晶化によるPtSiの高精度仕事関数制御に関する検討",,"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","一般社団法人電子情報通信学会","Vol. 110","No. 241","pp. 17-20",2010,Oct.
"石川 純平,高 峻,大見俊一郎","Yb混晶化PtSiの仕事関数変調機構",,"電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス","一般社団法人電子情報通信学会","Vol. 110","No. 241","pp. 13-16",2010,Oct.
"高 峻,石川 純平,大見俊一郎","2段階シリサイド化によるHf混晶化極薄PtSiの耐熱性向上に関する検討",,"電子情報通信学会論文誌. C, エレクトロニクス = The transactions of the Institute of Electronics, Information and Communication Engineers. C","一般社団法人電子情報通信学会","Vol. 93","No. 10","pp. 346-352",2010,Oct.
"Han Hui-Seong,Takahiro Sano,Young uk Song,Shun-ichiro Ohmi","Electrical Properties of Hf/HfSiON/p-Si(100) Structure MIS capacitor by Using ECR-Sputtering","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 13-105",2010,Mar.
"石川純平,高峻,大見俊一郎","ウェットエッチングによるYb混晶化PtSiのパターニングに関する検討","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 13-177",2010,Mar.
"高峻,石川純平,大見俊一郎","２段階シリサイド化によるHf混晶化PtSiの極薄膜化にかんする検討","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 13-178",2010,Mar.
"佐野貴洋,大見俊一郎","ECRスパッタ法により形成したHfN/HfSiON/Si(100)ゲートスタック構造の評価","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 13-104",2010,Mar.
"木村雄一郎,高峻,石川純平,大見俊一郎","RFマグネトロンスパッタ法によるPtSiゲート電極の形成","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 13-152",2010,Mar.
"Liao Min,Young uk Song,Jumpei Ishikawa,Shun-ichiro Ohmi","Dielectric layer dependence of electrical and physical properties of pentacene films","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 12-424",2010,Mar.
"Young uk Song,Shun-ichiro Ohmi,Hiroshi Ishiwara","Investigation of n-type properties of pentacene based on MOS diodes utilizing ultra thin metal interlayer","春季第５７回応用物理学関係連合講演会","春季第５７回応用物理学関係連合講演会予稿集","応用物理学会",,,"p. 12-435",2010,Mar.
"佐野貴洋,大見俊一郎","ECRスパッタ法による３次元構造上へのHfN/HfONゲートスタック構造の形成","秋季第７０回応用物理学会学術講演会","秋季第７０回応用物理学会学術講演会予稿集","応用物理学会",,,"pp. 737",2009,Sept.
"石川純平,高峻,大見俊一郎","ポストアニールによるYb混晶化PtSiの低抵抗率化に関する検討","秋季第７０回応用物理学会学術講演会","秋季第７０回応用物理学会学術講演会予稿集","応用物理学会",,,"pp. 756",2009,Sept.
"M. Akhtaruzzaman,S. Ohmi,J. Nishida,Y. Yamashita,H. Ishiwara","Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics",,"Japan J. Appl. Phys.",,"Vol. 48",,"p. 04C178-1-3",2009,June
"Young uk Song,Md.Akhtaruzzaman,Shun-ichiro Ohmi,Hiroshi Ishiwara","Characteristics of pentacene based MOS diodes with thin gate dielectric","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会","応用物理学会",,,"pp. 1396",2009,Mar.
"高峻,石川純平,大見俊一郎","Hf混晶化PtSiの耐熱性に関する検討","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,"pp. 867",2009,Mar.
"石川純平,高峻,大見俊一郎","Yb混晶化PtSiの結晶性に関する検討","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,"pp. 866",2009,Mar.
"佐野貴洋,大見俊一郎","3次元構造上に形成したHfON薄膜の側壁部膜質の評価","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,"pp. 850",2009,Mar.
"Joo-Won Yoon,Shun-ichiro Ohmi,Hiroshi Ishiwara","Retention Characteristics of poly(vinylidenefluoride-trifluoroethylene)MFIS diodes","春季第56回応用物理学関係連合講演会","春季第56回応用物理学関係連合講演会予稿集","応用物理学会",,,,2009,Mar.
"高峻、石川純平、大見俊一郎","２段階シリサイド化によるHf混晶化PtSiの耐熱性向上に関する検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 109","No. 118","pp. 7?10",2009,
"Young uk Song,Shun-ichiro Ohmi,Hiroshi Ishiwara","Investigation of characteristics of pentacene-based MOSFETs structures","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 109","No. 127","pp. 43?46",2009,
"佐野貴洋、大西峻人、大見俊一郎","ECRスパッタ法によるHfN/HfON積層構造の形成","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 109","No. 119","pp. 11?14",2009,
"高峻,石川純平,大見俊一郎","Hf結晶化PtSiの結晶性に関する検討","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,,"pp. 750",2008,Sept.
"須田雄一郎、モハメド アヌア、高峻、大見俊一郎","RFマグネトロンスパッタ法によるPtSiゲート電極の形成","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,,"pp. 749",2008,Sept.
"佐野貴洋、大見俊一郎","ECRスパッタ法による３次元構造上へのHfOxNy薄膜の形成","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,,"pp. 748",2008,Sept.
"Uzzaman Md. Akhtar,S. Ohmi,J. Nishida,Y. Yamashita,H. Ishiwara","Improvement of Pentacene Based MOS Diodes Characteristics by Surface Treatment of SiO2","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 3","p. 1286",2008,Apr.
"高峻,仲野雄介,大見俊一郎","Hf混晶化PtSiのシリサイド化条件に関する検討","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 885",2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride-trifluoroethylene) MFIS diodes","2008年（平成20年）第55回応用物理学関係連合講演会","2008年（平成20年）春季第55回応用物理学関係連合講演会講演予稿集",," 30a-P14-30/II",,,2008,Mar.
"須田雄一郎,野武幸輝,高峻,佐野貴洋,大見俊一郎","RFスパッタ法による3次元構造上へのSiO2薄膜の形成","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 881",2008,Mar.
"尹珠元,大見俊一郎,石原宏","Ferroelectrics Characteristics of poly (vinylidene fluoride - trifluoroethylene) MFIS diodes","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 579",2008,Mar.
"尹珠元,大見俊一郎,石原宏","Characteristics of metal-ferroelectric-insulartor-semiconductor structures based on poly(vinylidene fluoride-trifluoroethylene)","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 549","pp. 13-16",2008,Mar.
"佐野貴洋,仲野雄介,大見俊一郎","ECRスパッタ法による3次元ゲート構造上へのHfO2薄膜の形成","第55回応用物理学関係連合講演会講演予稿集","第55回応用物理学関係連合講演会講演予稿集","応用物理学会",,"No. 2","p. 882",2008,Mar.
"高峻、石川純平、大見俊一郎","Hf結晶化PtSiの仕事関数変数機構の検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 108",,"pp. 41-44",2008,
"高峻,石川純平,大見俊一郎","Hf結晶化PtSiの仕事関数変調機構の検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 108","No. 162","pp. 41-44",2008,
"大見俊一郎","HfNのECRプラズマ酸化により形成したHfOxNyのPDAプロセスの検討","International Symposium on Semiconductor Manufacturing 2007 日本特別報告会","International Symposium on Semiconductor Manufacturing 2007 日本特別報告会 Conf. Proc.","ISSM日本事務局",,,"pp. 25-33",2007,Nov.
"大見俊一郎,高峻,仲野雄介","Hfとの混晶化によるPtSiの仕事関数変調","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 245","pp. 53-56",2007,Oct.
"野武幸輝,須田雄一郎,大見俊一郎","SBSIプロセスによるSOI/BOX層の均一形成に関する検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 245","pp. 49-52",2007,Oct.
"S. Ohmi,Y. Nakano","Investigation of PDA Process to Improve Electrical Characteristics of HfOxNy High-k Dielectric Formed by ECR Plasma Oxidation of HfN","2007 International Symposium on Semiconductor Manufacturing","2007 International Symposium on Semiconductor Manufacturing, Conf. Proc.","IEEE",,,"pp. 514-517",2007,Oct.
"仲野雄介,佐藤雅樹,大見俊一郎","ECRプラズマプロセスによるHfO2系絶縁膜の極薄膜化の検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告","電子情報通信学会","Vol. 107","No. 245","pp. 19-22",2007,Oct.
"仲野雄介,大見俊一郎","高誘電率HfOxNy絶縁膜のPDAプロセスの検討","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会 講演予稿集","応用物理学会",,"No. 2","p. 812",2007,Sept.
"野武幸輝,金本啓,加藤樹理,大見俊一郎","SBSIプロセスによる極薄SOI/BOX層の均一形成に関する検討","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会 講演予稿集","応用物理学会",,"No. 2","p. 859",2007,Sept.
"Shun-ichiro OHMI,K. Kanemoto,H. Oka,H. Hisamatsu,Y. Matsuzawa,Y. Kitano,T. Hara,M. Hoshina,S. Ohmi,J. Kato","Fabrication of SOI MOSFET by “Separation by Bonding Silicon Islands (SBSI) Method",,"ECS Transactions",,"Vol. 6","No. 8","pp. 309-313",2007,Aug.
"J. Kato,H. Oka,K. Kanemoto,H. Hisamatsu,Y. Matsuzawa,Y. Kitano,T. Hara,M. Hoshina,S. Ohmi","Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems",,"ECS Transactions","The Electrochemical Society","Vol. 6","No. 8","pp. 245-251",2007,Aug.
"J. Kato,H. Oka,K. Kanemoto,H. Hisamatsu,Y. Matsuzawa,Y. Kitano,T. Hara,M. Hoshina,S. Ohmi","Fabrication of SOI MOSFET by “Separation by Bonding Silicon Islands (SBSI) Method",,"The 211th Meeting of The Electrochemical Society, Meeting Abstract","The Electrochemical Society",,"No. 745",,2007,May
"J. Kato,H. Oka,K. Kanemoto,H. Hisamatsu,Y. Matsuzawa,Y. Kitano,T. Hara,M. Hoshina,S. Ohmi","Mechanism of Selective Etching of SiGe Layers in SiGe/Si Systems",,"The 211th Meeting of The Electrochemical Society, Meeting Abstract","The Electrochemical Society",,"No. 868",,2007,May
"S. Ohmi,T. Sakai","A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels",,"IEICE Trans. Electron.",,"Vol. E90-C","No. 1","pp. 994-999",2007,May
"大見俊一郎,澤熊悠,大熊直樹","PtSiの混晶化による仕事関数変調","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告",,"Vol. 106","No. 277","pp. 33-36",2006,Oct.
"大見俊一郎","ECRプラズマプロセスによる高誘電率ゲート絶縁膜の形成","電気学会電子・情報・システム部門大会講演論文集",,,,,"pp. 14-19",2006,Sept.
"野武幸輝,矢橋健一,大見俊一郎","SBSIプロセスにおけるSi島の均一形成に関する検討","第67回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 778",2006,Aug.
"仲野雄介,佐藤雅樹,黒瀬朋紀,大見俊一郎","HfNのECRプラズマ酸化により形成したHfOxNyのゲート絶縁膜応用","第67回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 715",2006,Aug.
"佐藤雅樹,仲野雄介,大見俊一郎","Pt/HfOxNy/Si(100)ゲート積層構造の形成とPMA条件の検討","第67回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 715",2006,Aug.
"矢橋健一,野武幸輝,大見俊一郎","SBSI技術による極薄SOI/BOX層の形成","第67回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 779",2006,Aug.
"Shun-ichiro Ohmi,Tetsushi Sakai","A Proposal of Twin-Channel(TC)-MOSFET and its Fabrication Process",,"2006 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, Ext. Abst.",,,,"pp. 223-228",2006,July
"Masaki Satoh,Shun-ichiro Ohmi,Tetsushi Sakai","Characterization of n-MISFETs with Ultrathin HfOxNy Gate Insulator Formed by ECR-Ar/N2 Plasma Nitridation","2006 Electronic Materials Conference",,,,,"pp. 67",2006,June
"大見俊一郎,黒瀬朋紀,佐藤雅樹","HfNのECRプラズマ酸化によるHfON薄膜の形成","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告",,"Vol. 106","No. 108","pp. 93-97",2006,June
"Shun-ichiro Ohmi,Tomoyuki Nakanishi,Ken-ichi Yahashi,Tetsushi Sakai","Novel Fabricaition Process for Multi SOI Layers Using Selective Etching of SiGe in Multi Si/SiGe Layers","2006 Electronic Materials Conference",,,,,"pp. 61",2006,June
"S. Ohmi,T. Kurose,M. Sato","Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron resonance Ar/N2 Plasma nitridation of HfO2 Thin Films",,"IEICE Trans. Electron.",,"Vol. E89-C","No. 1","pp. 596-601",2006,May
"大見俊一郎","半導体の基礎：半導体とはどのようなものであるか","2006半導体入門セミナー","プレスジャーナル",,,,"pp. 17-36",2006,Apr.
"大熊直樹,澤熊悠,大見俊一郎","せり上げPtSi-SALICIDEにおける選択エッチングプロセスの検討","第53回応用物理学関係連合講演会講演予稿集",,,"Vol. 2",,"pp. 899",2006,Mar.
"佐藤雅樹,黒瀬朋紀,大見俊一郎","ECR-Ar/N2プラズマにより形成したHfOxNy膜を用いたn-MISFETの作製","第53回応用物理学関係連合講演会講演予稿集",,,"Vol. 2",,"pp. 854",2006,Mar.
"川下道宏,山崎浩史,大見俊一郎,櫻庭政夫,室田淳一,酒井徹志.","TML-MOSFETにおける極微細3次元チャネル形成プロセスの検討",,"第53回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 934",2006,Mar.
"Hiroshi Nohira,T. Yoshida,H. Okamoto,S. Shinagawa,W. Sakai,K. Nakajima,M. Suzuki,K. Kimura,NJ. Aun,Y. Kobayashi,Shun-ichiro OHMI,HIROSHI IWAI,E. Ikenaga,Y. Tanaka,K. Kobayashi,takeo hattori","Thermal stability of Gd2O3/Si(100) interfacial transition layer",,"JOURNAL DE PHYSIQUE IV",,"Vol. 132",,"pp. 273-277",2006,
"大見俊一郎","耐熱性金属との混晶化によるPtSiの仕事関数制御とせり上げsalicideプロセスへの応用","International Symposium on Semiconductor Manufacturing (ISSM) 2005 日本特別報告会、 Conference Proceedings",,,,,"pp. 121?130",2005,Nov.
"黒瀬朋紀,佐藤雅樹,大見俊一郎","HfNのECR Ar/O2プラズマ酸化プロセスによる極薄HfSiONの形成","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告",,"Vol. 105","No. 318","pp. 17-20",2005,Oct.
"仲西知之,高橋博,矢橋健一,大見俊一郎,酒井徹志","多層Si/SiGe構造におけるSiGe層横方向選択エッチングと多層SOI構造の形成","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告",,"Vol. 105","No. 317","pp. 9-12",2005,Oct.
"佐藤雅樹,黒瀬朋紀,大見俊一郎","ECR-Ar/N2プラズマにより形成したHfON膜の極薄膜化に関する検討","電子情報通信学会SDM研究会","電子情報通信学会技術研究報告",,"Vol. 105","No. 318","pp. 11?15",2005,Oct.
"川下道宏,大見俊一郎,櫻庭政夫,室田淳一,酒井徹志.","TML(Twin-Multi-Layer Channel) MOSFETの作製プロセスに関する検討",,"第66回応用物理学会学術講演会講演予稿集",,"Vol. 2",,"pp. 741",2005,Sept.
"佐藤雅樹,黒瀬朋紀,大見俊一郎","極薄HfO2薄膜のECR Ar/N2プラズマ窒化条件の検討","第66回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 674",2005,Sept.
"S. Ohmi,Y. Kato,H. Fujiura,Y. Sawakuma,N. Ohkuma","Effect of Ultra-thin Ti Layer on PtSi Work Function Modulation","2005 IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings",,,,,"pp. 426-429",2005,Sept.
"黒瀬朋紀,佐藤雅樹,大見俊一郎","HfNのECR Ar/O2プラズマ酸化プロセスによる極薄HfSiONの形成","第66回応用物理学会学術講演会講演予稿集",,,"Vol. 2",,"pp. 681",2005,Sept.
"Shun-ichiro Ohmi,Tomoki Kurose,Masaki Satoh,Takafumi Uchikawa","ECR Ar/N2 Plasma Nitridation of HfO2 for High-k Gate Insulator Applications",,"2005 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices, Ext. Abst.",,,,"pp. 7-10",2005,June
"J.-A. Ng,Y. Kuroki,N. Sugii,K. Kakushima,S. Ohmi,K. Tsutsui,T. Hattori,H. Iwai,H. Wong","Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing",,"Microelectron. Eng.",,"Vol. 80",,"pp. 206-209",2005,June
"藤裏弘樹,加藤有亮,大見俊一郎,酒井徹志","Si/Pt/Si(100)積層構造のシリサイド化によるPtSiの形成",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 944",2005,Apr.
"森俊介,中港努,大見俊一郎,酒井徹志","ECRスパッタ法による3次元ゲート構造上への高誘電率絶縁膜の形成",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 980",2005,Mar.
"川下道宏,山崎浩史,袴田佳孝,大見俊一郎,櫻庭政夫,室田淳一,酒井徹志.","新構造TML(Twin-Multi-Layer Channel)MOSFET",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 982",2005,Mar.
"黒瀬朋紀,内川偉史,大見俊一郎,酒井徹志","HfNのECR Ar/O2プラズマ酸化により形成したHfOxNy薄膜の熱処理に関する検討",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 899",2005,
"福山享,金容?,大見俊一郎,筒井一生,岩井洋","MIM構造の高誘電率La2O3薄膜におけるリーク電流機構",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. ２",,"pp. ９１８",2005,
"吉田徹史,松田徹,岡本英介,品川盛治,野平博司,中川健太郎,黒木裕介,宮内邦裕,大見俊一郎,岩井洋,池永英司,高田恭孝,小林啓介,服部健雄","LaOx/YOx/Si界面組成遷移層の化学結合状態の熱処理依存性",,"第52回応用物理学関係連合講演会講演予稿集",,"Vol. 2",,"pp. 918",2005,
"Y. Kim,S. Ohmi,K. Tsutsui,H. Iwai","Analysis of variation in leakage currents of Lanthana thin films",,"Solid-State Electronics",,"Vol. 49",,"pp. 825-833",2005,
"Junichi Tonotani,Shun-ichiro Ohmi,Hiroshi Iwai","Dry Etching of Cr2O3/Cr Stacked Film during Resist Ashing by Oxygen Plasma",,"Jpn. J. Appl. Phys.",,"Vol. 44",,"pp. 114-117",2005,
"Y. Kim,K. Miyauchi,S. Ohmi,K. Tsutsui,H. Iwai","Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation",,"Microelectronics Journal",,"Vol. 36",,"pp. 41-49",2005,
"T. Kurose,T. Uchikawa,S. Ohmi,T. Sakai","ECR Ar/O2 Plasma Oxidation of HfN Thin Films for High Dielectric HfOxNy Formations",,"Trans. Mat. Res. Soc. Japan",,"Vol. 30",,"pp. 209-212",2005,
"T. Yamazaki,S. Ohmi,S. Morita,H. Ohri,J. Murota,M. Sakuraba,H. Omi,T. Sakai","Separation by Bonding Si Iskands (SBSI) for LSI Applications",,"Materials Science in Semiconductor Processing",,"Vol. 8",,"pp. 59-63",2005,
"T. Yamazaki,S. Ohmi,S. Morita,H. Ohri,J. Murota,M. Sakuraba,H. Omi,T. Sakai","Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications",,"IEICE Trans. Electron.",,"Vol. E88-C",,"pp. 656-661",2005,
"T. Kurose,T. Uchikawa,S. Ohmi,T. Sakai","HfOxNy Thin Films Formed by ECR Ar/O2 Plasma Oxidation of HfN Thin Films",,"The 15th Symposium of The Materials Research Society of Japan",,,,"pp. 129",2004,Dec.
"S. Ohmi,H. Ohri,T. Yamazaki,M. Sakuraba,J. Murota,T. Sakai","Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI)",,"Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of properties and applications to ultrahigh speed and opto-electronic devices",,,,"pp. 77-78",2004,Oct.
"H. Ohri,T. Yamazaki,S. Ohmi,T. Sakai","A Study on Selective Etching of SiGe Layers and Electrical Characteristics of MOS Diodes Formed after Selective Etching in SBSI Process",,"Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of properties and applications to ultrahigh speed and opto-electronic devices",,,,"pp. 79-80",2004,Oct.
"中光豊,中港努,内川偉史,大見俊一郎,酒井徹志","AlOx/Si(100)界面特性のECRスパッタ条件依存性",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 664",2004,Sept.
"T. Yamazaki,S. Ohmi,S. Morita,H. Ohri,J. Murota,M. Sakuraba,H. Omi,T. Sakai","Separation by Bonding Si Islands (SBSI) for Adavnced CMOS LSIs","2004Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices","2004Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices",,,,"pp. 13-16",2004,June
"Tetsushi Sakai,Takashi Yamazaki,Shun-ichiro Ohmi,Shinya Morita,Hiroyuki Ori,Junichi Murota,Masao Sakuraba,HIroo Omi,Yasuo Takahashi","Separation by Bonding Si Islands (SBSI) for LSI Applications",,"Second International SiGe Technology and Device Meeting",,,,"pp. ?",2004,May
"黄仁安,栗山篤,大見俊一郎,筒井一生,岩井洋","La2O3薄膜に対する熱処理に関する検討",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 869",2004,
"吉田丈治,ヘンドリアッシャサウッディン,大見俊一郎,筒井一生,岩井洋","La2O3をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール雰囲気依存性",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 869",2004,
"宮内邦裕,大見俊一郎,筒井一生,岩井洋","La2O3薄膜における電気特性のアニール時間依存性",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 870",2004,
"金容提,大見俊一郎,筒井一生,岩井洋","高誘電率La2O3薄膜におけるリーク電流機構の解析",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 870",2004,
"内川偉史,山中剛,大見俊一郎,酒井徹志","ECRスパッタ法により形成したHfOxNy薄膜の熱処理に関する検討",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 883",2004,
"古山直人,加藤有亮,大見俊一郎,酒井徹志","極浅プレアモルファス層によるTiSi2形成膜厚制御",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 907",2004,
"加藤有亮,古山直人,鈴木貴也,大見俊一郎,酒井徹志","極薄SOI上に形成したPtSiの耐熱性",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 907",2004,
"山崎崇,関川智英,袴田佳孝,大見俊一郎,酒井徹志","Si/SiGe/Si構造におけるSiGe層選択エッチングのGe組成比およびアニール温度依存性",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 936",2004,
"大理洋征龍,山崎崇,盛田伸也,関川智英,大見俊一郎,酒井徹志","SiGe/Si層におけるSiGe層選択エッチング特性",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 936",2004,
"佐藤貴久,田村秀貴,檜垣良太,佐々木雄一朗,水野文二,筒井一生,大見俊一郎,岩井洋","プラズマドーピング後の基板洗浄がドーズに与える影響",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 945",2004,
"高木克洋,佐藤貴久,田村秀貴,筒井一生,佐々木雄一朗,水野文二,大見俊一郎,岩井洋","プラズマドーピングにおけるHeプラズマ後処理による不純物プロファイル制御",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 945",2004,
"中港努,世古裕亮,大見俊一郎,酒井徹志","新構造Double-Gate MOSFETの作製プロセスに関する検討",,"第51回応用物理学関係連合講演会",,"Vol. 2",,"pp. 976",2004,
"黒瀬朋紀,内川偉史,大見俊一郎,酒井徹志","HfNのECR Ar/O2プラズマ酸化によるHfOxNy薄膜の形成",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 679",2004,
"黒木裕介,黄仁安,栗山篤,大見俊一郎,筒井一生,岩井洋","La2O3をゲート絶縁膜に用いたMISFETにおけるポストメタライゼーションアニールの効果に関する検討",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 686",2004,
"福山享,金容提,大見俊一郎,筒井一生,岩井洋","高誘電率La2O3薄膜におけるリーク電流機構の解析",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 686",2004,
"吉崎智史,吉田丈治,大見俊一郎,筒井一生,岩井洋","La2O3をゲート絶縁膜に用いたMISFETの低周波ノイズのアニール温度依存性",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 686",2004,
"吉田徹史,岡本英介,品川盛治,野平博司,酒井渉,中島薫,鈴木基史,木村健二,吉田丈治,大見俊一郎,岩井洋,池永英司,高田恭孝,辛埴,小林啓介,服部健雄","GdOx/Si界面組成遷移層の化学結合状態の深さ方向分布の熱処理依存性",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 688",2004,
"野平博司,吉田徹史,岡本英介,品川盛治,酒井渉,中島薫,鈴木基史,木村健二,Ng Jin Aun,小林洋一,宮内邦裕,吉田丈治,大見俊一郎,岩井洋,池永英司,高田恭孝,辛","LaOx/Si界面組成遷移層の化学結合状態の熱処理依存性",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 688",2004,
"大理洋征龍,山崎崇,盛田伸也,袴田佳孝,大見俊一郎,酒井徹志","極薄SOI層と素子間分離領域を一体化する新技術:SBSI(Separation by Bonding Si Islands) -Si島とSi基板間の熱酸化-",,"第65回応用物理学会学術講演会",,"Vol. 2",,"pp. 745",2004,
"S. Ohmi,M. Takeda,H. Ishiwara,H. Iwai","Characterization of Lu2O3 Thin Films Fabricated by E-beam Deposition Method",,"J. Electrochem. Soc.",,,,,2004,
"D. Sasaki,S. Ohmi,M. Sakuraba,J. Murota,T. Sakai","Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers",,"Applied Surface Scienece",,"Vol. 224",,"pp. 270-273",2004,
"D. Sasaki,S. Ohmi,M. Sakuraba,J. Murota,T. Sakai","Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Layers",,"Appl. Surf. Sci.",,"Vol. 224",,"pp. 270-273",2004,
"S. Ohmi,H. Yamamoto,J. Taguchi,K. Tsutsui,H. Iwai","Effect of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy2O3/Si(100) Diode Characteristics",,"Jpn. J. Appl. Phys.",,"Vol. 43","No. 4B","pp. 1873-1878",2004,
"Go Yamanaka,Takafumi Uchikawa,Shun-ichiro Ohmi,Tetsushi Sakai","AlON Thin Films Formed by ECR Plasma Oxidation for High-k gate Insulator Application",,"Material Research Society Fall Meeting Abstracts",,,,"pp. 140",2003,Dec.
"Takashi Yamazaki,Tomohide Sekikawa,Shinya Morita,Yoshitaka Hakamada,Hiroyuki Ohri,Shun-ichiro Ohmi,Tetsushi Sakai","A Study on Etching of SiGe Layers in SiGe/Si Systems for Device Applications",,"Material Research Society Fall Meeting Abstracts",,,,"pp. 572",2003,Dec.
"S. Ohmi,I. Ueda,Y. Kobayashi,K. Tsutsui,H. Iwai","Electrical characteristics of rare-earth oxides stacked-layer structures",,"Ext. Abst. of International Workshop on Gate Insulator",,,,"pp. 28-31",2003,Nov.
"Yongshik Kim,Atsushi Kuriyama,Isao Ueda,Shun-ichiro OHMI,Kazuo Tsutsui,HIROSHI IWAI","Analysis of Electrical Characteristics of La2O3 Thin Film Annealed in Vacuum and Others","33rd European Solid-State Device Research Conference (ESSDERC2003)",,,,,"pp. 569-572",2003,Sept.
"Ryota Higaki,Kazuo Tsutsui,Yuichiro Sasaki,Sadahiro Akama,Bunji Mizuno,Shun-ichiro OHMI,HIROSHI IWAI","Effect of gas phase absorption into Si substrates on plasma doping process","33rd European Solid-State Device Research Conference (ESSDERC2003)",,,,,"pp. 231-234",2003,Sept.
"S. Ohmi,H. Yamamoto,J. Taguchi,K. Tsutsui,H. Iwai","Effect of Vacuum Annealing on High-k Dy2O3 Thin Films Deposited on Si(100)",,"Ext. Abst. of the 2003 Intenational Conference on Solid State Devices and Materials",,,,"pp. 510-511",2003,Sept.
"野平博司,白石 貴義,高橋 健介,柏木 郁未,大島 千鶴,大見俊一郎,岩井洋,城森 慎司,中嶋 薫,鈴木 基史,木村 健二,服部 健雄","極薄希土類酸化膜/Si(100)界面構造（極薄ゲート絶縁膜・シリコン界面の評価技術・解析技術）",,"電子情報通信学会技術研究報告、SDM、シリコン材料・デバイス","電子情報通信学会","Vol. 103","No. 149","pp. 25-29",2003,June
"T. Sakai,S. Ohmi,D. Sasaki,M. Sakuraba,J. Murota","A Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Lyaers",,"Abst. First International SiGe Technology and Device Meeting",,,,"pp. 31-32",2003,Jan.
"T.Hattori,T.Yoshida,T.Shiraishi,K.Takahashi,H.Nohira,S.Joumori,K.Nakajima,M.Suzuki,K.Kimura,I.Kashiwagi,C.Ohshima,S.Ohmi,H.Iwai","Composition, Chemical Structure and Electronic Band Structure of Rare Earth Oxide/Si(100) Interfacial Transition Layer",,"INFOS2003",,,,"pp. WS1-9",2003,
"Y.Kim,A.Kuriyama,I.Ueda,S. Ohmi,K.Tsutsui,H.Iwai","Analysis of Electrical Characteristics of La2O3 Thin Films Annealed in Vacuum and Others",,"ESSDERC 2003",,,,"pp. 569-572",2003,
"I.Ueda,S.Ohmi,H.Iwai","Electrical Characteristics of High-K Stack Gate Dielectric Thin Films with La2O3 as Buffer Layer",,"204^th^ ECS Meeting",,,,"pp. Abs. 545",2003,
"H.Sauddin,Y.Yoshihara,S.Ohmi,K.Tsutsui,H.Iwai","Low-Frequency Noise Characteristics of MISFET's with La2O3 Gate Dielectrics",,"204^th^ ECS Meeting",,,,"pp. Abs.564",2003,
"A.Kuriyama,S.Ohmi,K.Tsutusi,H.Iwai","Effect of Post Metallization Annealing for La2O3 Gate Thin Films on Electrical Characteristics",,"204^th^ ECS Meeting",,,,"pp. Abs.564",2003,
"Y.Kim,S.Ohmi,K.Tsusui,H.Iwai","Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method",,"204^th^ ECS Meeting",,,,"pp. Abs. 582",2003,
"大見俊一郎","希土類酸化物薄膜のゲート絶縁膜応用",,"STRJ WG3-FEP会議（第52回）",,,,,2003,
"大見俊一郎","希土類酸化物薄膜のゲート絶縁膜応用",,"電気学会誘電体薄膜材料技術調査専門委員会 第８回委員会",,,,,2003,
"吉田丈治,ヘンドリアンシャーサウッディン,大見俊一郎,筒井一生,岩井洋","La2O3をゲート絶縁膜に用いたMISFET の低周波ノイズ",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 736",2003,
"黄仁安,栗山篤,大見俊一郎,筒井一生,岩井洋","La2O3薄膜におけるポストメタルアニールに関する検討",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 736",2003,
"檜垣良太,筒井一生,佐々木雄一朗,水野文二,吉川住和,大見俊一郎,岩井洋","プラズマ前処理を用いたガスドーピングにおける基板表面状態の影響",,"第64 回応用物理学関係連合講演会",,"Vol. 2",,"pp. 771",2003,
"佐藤貴久,檜垣良太,筒井一生,佐々木雄一朗,田村秀貴,金成国,水野文二,大見俊一郎,岩井洋","プラズマドーピング前後のHF 洗浄とドーズ量の変化",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 772",2003,
"R.Higaki,K.Tsutsui,Y.Sasaki,S.Akama,B.Mizuno,S.Ohmi,H.Iwai","Effects of gas phase absorption into Si substrates on plasma doping process",,"ESSDERC 2003",,,,"pp. 231-234",2003,
"山中剛,佐々木大輔,大見俊一郎,酒井徹志","ECRスパッタ法により形成したAlOxNy薄膜の電気特性に対する熱処理の効果",,"第50回応用物理学関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 893",2003,
"大見俊一郎","チャネル多層化 新構造Multi-Layer Channel MOSFET",,"第50回応用物理学関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 965",2003,
"山崎崇,高瀬恭英,大見俊一郎,酒井徹志","SFC構造SiGe HBTの高周波特性の解析",,"第50回 応用物理学関係連合講演会 予稿集",,"Vol. 2",,"pp. 967",2003,
"高瀬恭英,山崎崇,大見俊一郎,酒井徹志","SFC構造SiGe HBTにおけるp+poly-Siコンタクト領域作製プロセスの検討",,"第50回 応用物理学関係連合講演会 予稿集",,"Vol. ２",,"pp. 967",2003,
"山中剛,内川偉史,大見俊一郎,酒井徹志","ECRスパッタ法により形成したAlOxNy薄膜の熱処理に関する検討",,"第64回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 733",2003,
"関川智英,袴田佳孝,山崎崇,大見俊一郎,酒井徹志","Si/SiGe/Si構造におけるSiGe選択エッチングに関する検討",,"第64回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 770",2003,
"盛田伸也,大理洋征龍,山崎崇,大見俊一郎,酒井徹志","新構造MOS/SOIの電気特性 -2Dシミュレーション-",,"第64回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 795",2003,
"世古裕亮,大見俊一郎,酒井徹志","n+-poly-Siゲートを有する新構造Double-Gate MOSFETの特性解析",,"第64回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 796",2003,
"金容?,柏木郁未,大見俊一郎,岩井洋","希土類酸化物の結晶化におけるSi 基板面方位依存性",,"第63回応用物理学会学術講演会講演予稿集",,"Vol. 2",,"pp. 734",2003,
"吉原義昭,大島千鶴,大見俊一郎,岩井洋","高誘電率希土類酸化物薄膜のSi基板表面処理の効果",,"第63回応用物理学会学術講演会講演予稿集",,"Vol. 2",,"pp. 735",2003,
"金容?,大見俊一郎,筒井一生,岩井洋","MBE 法により形成した高誘電率La2O3薄膜における電気特性",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 868",2003,
"吉原義昭,大島千鶴,大見俊一郎,筒井一生,岩井洋","La2O3薄膜の電気特性におけるSi基板表面処理の効果",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 868",2003,
"上田功,大見俊一郎,筒井一生,岩井洋","高誘電率希土類酸化物の積層構造に関する検討",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 869",2003,
"中嶋薫,城森慎司,鈴木基史,木村健二,大見俊一郎,岩井洋","La2O3, Gd2O3およびLu2O3極薄膜の高分解能RBS による分析",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 869",2003,
"白石貴義,竹林一騎,高橋健介,野平博司,柏木郁未,大島千鶴,大見俊一郎,岩井洋,城森慎司,中嶋薫,鈴木基史,木村健二,服部健雄","LuOx極薄膜の深さ方向組成・化学結合状態分析",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 869",2003,
"吉田徹史,白石貴義,高橋健介,野平博司,柏木郁未,大島千鶴,大見俊一郎,岩井洋,城森慎司,中嶋薫,鈴木基史,木村健二,服部健雄","LuOx極薄膜中のシリケート",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 870",2003,
"野平博司,白石貴義,高橋健介,柏木郁未,大島千鶴,大見俊一郎,岩井洋,城森慎司,中嶋薫,鈴木基史,木村健二,高田恭孝,小林啓介,辛埴,服部健雄","希土類酸化物極薄膜中のシリケートとシリサイド",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 870",2003,
"大島千鶴,吉原義昭,大見俊一郎,筒井一生,岩井洋","高誘電率Gd2O3薄膜のSi 基板表面処理の効果",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 871",2003,
"栗山篤,大見俊一郎,筒井一生,岩井洋","希土類酸化物薄膜におけるポストアニールに関する検討",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 871",2003,
"柏木郁未,大見俊一郎,筒井一生,岩井洋","希土類酸化物の電気特性におけるSi基板面方位依存性",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 871",2003,
"山本浩之,栗山篤,大見俊一郎,筒井一生,岩井洋","希土類酸化物薄膜における超高真空アニールの効果に関する検討",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 872",2003,
"戸野谷純一,大見俊一郎,岩井洋","TaN ゲート電極のRIE特性",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 935",2003,
"檜垣良太,赤間貞洋,筒井一生,佐々木雄一朗,水野文二,吉川住和,大見俊一郎,岩井洋","室温ガスドーピング法におけるドーズ量の制御",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 941",2003,
"赤間貞洋,檜垣良太,筒井一生,佐々木雄一朗,水野文二,吉川住和,大見俊一郎,岩井洋“","室温ガスドーピングの表面反応機構",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 941",2003,
"佐々木雄一朗,水野文二,赤間貞洋,檜垣良太,大見俊一郎,筒井一生,岡下勝己,前嶋聡,吉川住和,中山一郎,岩井洋","プラズマドーピング法におけるH 等の深さ分布プロファイルの挙動とコンタミの検討",,"第50回応用物理学関係連合講演会",,"Vol. 2",,"pp. 941",2003,
"白石貴義,吉田徹史,野平博司,柏木郁未,大島千鶴,大見俊一郎,岩井洋,城森慎司,中嶋薫,鈴木基史,木村健二,服部健雄","LaOx極薄膜の組成・化学結合状態の深さ方向分析(II)",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 735",2003,
"小林洋一,上田功,大見俊一郎,筒井一生,岩井洋","高誘電率希土類酸化物の積層構造に関する検討",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 735",2003,
"宮内邦裕,金容?,大見俊一郎,筒井一生,岩井洋","電子ビーム蒸着法により形成した高誘電率La2O3薄膜における漏れ電流特性",,"第64回応用物理学関係連合講演会",,"Vol. 2",,"pp. 735",2003,
"C. Ohshima,J. Taguchi,I. Kashiwagi,H. Yamamoto,S. Ohmi,H. Iwai","Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics",,"Appl. Surf. Sci.",,"Vol. 216",,"pp. 302-306",2003,
"H. Nohira,T. Shiraishi,T. Nakamura,K. Takahashi,M. Takeda,S. Ohmi,H. Iwai,T. Hattori","Chemical and electronic structures of Lu2O3/Si interfacial transition layer",,"Appl. Surf. Sci.",,"Vol. 216",,"pp. 234-238",2003,
"S. Ohmi,C. Kobayashi,I. Kashiwagi,C. Ohshima,H. Ishiwara,H. Iwai","Characterization of La2O3 and Yb2O3 Thin Films for High-k Gate Insulator Application",,"J. Electrochem. Soc.",,"Vol. 150",,"pp. F134-F140",2003,
"J. Tonotani,T. Iwamoto,F. Sato,K. Hattori,S. Ohmi,H. Iwai","Dry etching characteristics of TiN film using Ar/CHF3, Ar/Cl2, and Ar/BCl3 gas chemicals in an inductively coupled plasma",,"J. Vac. Sci. Technol.",,"Vol. B21","No. 5","pp. 2163-2168",2003,
"Ikmi Kashiwagi,Chizuru Ohshima,Yongshik Kim,Shun-ichiro Ohmi,Kazuo Tsutsui,Hiroshi Iwai","Dependence of Gd2O3 Thin Film Properties on Si Substrate Orienteation","IEEE Workshop on Microelectronics and Electron Devices (uE-ED2002)",,,,,,2002,Oct.
"金容?,柏木郁未,大見俊一郎,岩井洋","希土類酸化物の結晶化におけるSi基板面方位依存性",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 734",2002,
"H. Yamamoto,J. Taguchi,S. -I. Ohmi,H. Iwai","Electrical Characterisitics Improvement of Dy2O3 Thin Films by In-situ Vacuum Anneal",,"202^nd^ meeting of The Electrochemical Society",,,,"pp. 375",2002,
"A. Kikuchi,S. Akama,S. Ohmi,K. Tsutsui,H. Iwai","High-k Gate Insulator Endurance against Moisture Ambience and Wet Process",,"WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)",,,,"pp. 13-14",2002,
"Ikumi Kashiwagi,Chizuru Ohshima,Yongshik Kim,Shun-ichiro Ohmi,Kazuo Tsutsui,Hiroshi Iwai","Dependence of Gd2O3 thin film properties on Si substrate orientation",,"WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)",,,,"pp. 15-16",2002,
"Hiroyuki Yamamoto,Junichi Taguchi,Shun-ichiro Ohmi,Hiroshi Iwai","The Effect of In-situ Vacuum Anneal for High-Dielectric Dy2O3 Thin Films",,"WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES (μE-ED 2002)",,,,"pp. 17-18",2002,
"C. Ohshima,J. Taguchi,I. Kashiwagi,H. Yamamoto,S. Ohmi,H. Iwai","Effect of Surface Treatment of Si substrates and Annealing Condition on High-k Rare Earth Oxide Gate Dielectrics ",,"Fourth International Symposium on Control of Semiconductor Interfaces ",,,,"pp. P2-12",2002,
"H. Nohira,T. Shiraishi,T. Nakamura,K. Takahashi,M. Takeda,S. Ohmi,H. Iwai,T. Hattori","Chemical and Electronic Structures of Lu2O3/Si Interfacial Transition Layer",,"Fourth International Symposium on Control of Semiconductor Interfaces",,,,"pp. P4-5",2002,
"T. Yamazaki,S. Ohmi,M. Sakuraba,J. Murota,T. Sakai","Double-polysilicon self-aligned HBT with non-selective epitaxial SiGe:C base layer",,"Second International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices",,,,"pp. VIII-06",2002,
"T. Shiraishi,T. Nakamura,K. Takahashi,I. Kashiwagi,C. Ohshima,H. Nohira,S. Ohmi,H. Iwai,T. Hattori","Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer",,"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials",,,,"pp. 758-759",2002,
"山中剛,佐々木大輔,大見俊一郎,酒井徹志","ECRスパッタ法により形成したAlOxNy薄膜の電気特性",,"第63回応用物理学関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 745",2002,
"S. Ohmi,M. Takeda,H. Ishiwara,H. Iwai","Characterization of Lu2O3 Thin Films Fabricated by E-beam Deposition Method",,"Proc. 2nd Int. Conf. Semicond. Technol.",,"Vol. PV 2002-17",,"pp. 251-261",2002,
"Chizuru Ohshima,Ikumi Kashiwagi,Shun-ichiro Ohmi,Hiroshi Iwai","Electrical characteristics of Gd2O3 thin film deposited on Si substrate",,"32nd European Solid-State Device Research Conference",,,,"pp. 415-418",2002,
"Sadahiro Akama,Akira Kikuchi,Junichi Tonotani,Shun-ichiro Ohmi,Hiroshi Iwai","Stability of High-k Thin Films in Moisture Ambience - The effect of Dissolution Gas from Acryl Apparatus - ",,"32nd European Solid-State Device Research Conference",,,,"pp. 587-590",2002,
"田口順一,山本浩之,大見俊一郎,岩井洋","Dy2O3/Si(100)構造における電気特性のアニール条件依存性",,"STARCシンポジウム2002",,,,,2002,
"赤間貞洋,菊池明,大見俊一郎,岩井洋","高誘電率薄膜の耐湿性に関する検討 ?アクリル容器からの放出ガスの影響?",,"STARCシンポジウム2002",,,,,2002,
"大島千鶴,柏木郁未,大見俊一郎,岩井洋","Si基板上に形成した高誘電率Gd2O3薄膜の電気特性",,"STARCシンポジウム2002",,,,,2002,
"大見俊一郎","最先端ＣＭＯＳデバイス・プロセス技術",,"第99回電子デバイス技術委員会",,,,,2002,
"大見俊一郎,岩井洋","微細シリコンデバイスに要求される各種高性能薄膜",,"第63回応用物理学会学術講演会 応用物理学会論文賞受賞記念講演",,"Vol. 0",,"pp. 10",2002,
"白石貴義,中村智裕,吉田徹史,高橋健介,柏木郁未,大島千鶴,武田光弘,野平博司,大見俊一郎,岩井洋,服部健雄","GdOx/Si(100)およびLuOx/Si(100)界面遷移層の角度分解X線光電子分光解析",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 735",2002,
"檜垣良太,赤間貞洋,大見俊一郎,筒井一生,佐々木雄一朗,水野文二,岩井洋","プラズマドーピングとプラズマ前処理を用いたガスドーピング",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 769",2002,
"上田功,田口順一,大見俊一郎,岩井洋","希土類酸化物上へのTaNゲート電極の形成",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 737",2002,
"吉原義昭,大島千鶴,大見俊一郎,岩井洋","高誘電率希土類酸化物薄膜のSi基板表面処理の効果",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 735",2002,
"I. Kashiwagi,C. Ohshima,S.-I. Ohmi,H. Iwai","Characteristics of High-k Gd2O3 films deposited on different orientation of Si substrate",,"202nd meeting of The Electrochemical Society",,,,,2002,
"栗山篤,山本浩之,大見俊一郎,岩井洋","希土類酸化物薄膜におけるin-situ真空アニールの効果に関する検討",,"第63回応用物理学会学術講演会 講演予稿集",,"Vol. 2",,"pp. 734",2002,
"山崎崇,大見俊一郎,室田淳一,酒井徹志","Pイオン注入による非晶質Si薄膜の増速エッチングとその応用",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 859",2002,
"奥田慶文,大見俊一郎,酒井徹志","Sub-20nm新構造Double-Gate MOSFET",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 890",2002,
"安西邦夫,佐々木大輔,大見俊一郎,酒井徹志","ECRスパッタ法により形成したAlN薄膜へのAr/O2プラズマ照射の効果",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 834",2002,
"戸野谷純一,赤間貞洋,菊池明,大見俊一郎,岩井洋","High-kゲート絶縁膜のRIE特性",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 837",2002,
"中村智裕,白石貴義,高橋健介,柏木郁未,大島千鶴,武田光弘,野平博司,大見俊一郎,岩井洋,服部健雄","GdOxおよびLuOxの極薄膜確度分解X線光電子分光分析",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 837",2002,
"武田光弘,大見俊一郎,石原宏,岩井洋","Lu2O3薄膜形成における基板表面処理の効果",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 837",2002,
"菊地明,赤間貞洋,戸野谷純一,大見俊一郎,石原宏,岩井洋","希土類酸化物薄膜のウェットプロセス耐性",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 836",2002,
"大島千鶴,柏木郁未,大見俊一郎,石原宏,岩井洋","Si基板上に形成した高誘電率 Gd2O3薄膜の電気特性",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 836",2002,
"山本浩之,田口順一,大見俊一郎,石原宏,岩井洋","In-situ アニールによるDy2O3薄膜の電気特性向上に関する検討",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 836",2002,
"田口順一,山本浩之,戸野谷純一,大見俊一郎,石原宏,岩井洋","Dy2O3/Si(100)構造の電気特性のアニール時間依存性",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 835",2002,
"柏木郁未,大島千鶴,大見俊一郎,石原宏,岩井洋","希土類酸化物薄膜の電気特性におけるSi基板面方位依存性",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 796",2002,
"赤間貞洋,菊池明,戸野谷純一,大見俊一郎,石原宏,岩井洋","高誘電率希土類酸化物薄膜の耐湿性に関する検討 ?アクリル容器からの放出ガスの影響?",,"第49回応用物理学会関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 795",2002,
"佐藤航一郎,大見俊一郎,石原宏,岩井洋","Si基板上への高誘電率Pr2O3薄膜の形成条件に関する検討",,"第49回応用物理学関係連合講演会 講演予稿集",,"Vol. 2",,"pp. 795",2002,
"S.Ohmi,I.Kashiwagi,C.Ohshima,J.Taguchi,H.Yamamoto,J.Tonotani,H.Ishiwara,H.Iwai","Electrical Characteristics of Rare Earth Gate Oxides Improved by Chemical Oxide and Long Low Temperature Annealing",,"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials",,,,"pp. 718-719",2002,
"S.Ohmi,M.Takeda,H.Ishiwara,H. Iwai","Characterization of Lu2O3 High-k Thin Films on Si(100) Fabricated by E-beam Deposition Method",,"ECS International Semiconductor Technology Conference 2002",,,,"pp. Abstract No.59",2002,
"S.Ohmi,S.Akama,A.Kikuchi,I.Kashiwagi,C.Ohshima,J.Taguchi,H.Yamamoto,K.Sato,M.Takeda,H.Ishiwara,H.Iwai","Rare Earth Metal Oxides for High-k Gate Insulator",,"Electrochemical Society Proceedings Volume 2002-2",,,,"pp. 376-387",2002,
"J. Taguchi,H. Yamamoto,J. Tonotani,S. Ohmi,H. Ishiwara,H. Iwai","Annealing Condition Dependence of Electrical Characteristics for Dy2O3/Si(100) Structures",,"32nd European Solid-State Device Research Conference",,,,"pp. 591-594",2002,
"A. Kikuchi,S. Akama,S. -I. Ohmi,H. Iwai","Stability of High-k Thin Films for Wet Process",,"202nd meeting of The Electrochemical Society",,,,,2002,
"徳光永輔,大見俊一郎,岩井洋","High-k ゲート絶縁膜用酸化物材料の研究","電気学会電子材料研究会","電気学会電子材料研究会資料",,"Vol. EFM-01",,"pp. 37-41",2001,Sept.
"柏木郁未,大島千鶴,佐藤航一郎,武田光弘,大島享介,大見俊一郎,石原宏,岩井洋","High-kゲート絶縁膜用希土類酸化物薄膜の電気特性",,"STARCシンポジウム2001",,,,,2001,
"佐藤航一郎,大見俊一郎,石原宏,岩井洋","高誘電率Pr2O3薄膜の形成条件に関する検討",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"田口順一,山本浩之,佐藤航一郎,武田光弘,大島享介,大見俊一郎,石原宏,岩井洋","高誘電率希土類酸化物のSi基板上への形成",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"赤間貞洋,菊地明,佐藤航一郎,武田光弘,大島享介,大見俊一郎,石原宏,岩井洋","高誘電率希土類酸化物薄膜の耐湿性に関する検討",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"山本浩之,田口順一,佐藤航一郎,武田光弘,大島享介,大見俊一郎,石原宏,岩井洋","高誘電率希土類酸化物のSi基板上への形成",,"STARCシンポジウム2001",,,,,2001,
"武田光弘,佐藤航一郎,大見俊一郎,石原宏,岩井洋","電子ビーム蒸着法による高誘電率Lu2O3薄膜の形成",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"大島千鶴,柏木郁未,佐藤航一郎,武田光弘,大島享介,大見俊一郎,石原宏,岩井洋","High-kゲート絶縁膜用希土類酸化物薄膜の電気特性",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"大島享介,大見俊一郎,朴炳垠,石原宏,岩 井 洋","電子ビーム蒸着法によるZrO2薄膜形成時における酸素導入の効果",,"第62回応用物理学会学術講演会",,"Vol. 2",,,2001,
"岩井洋,大見俊一郎","高誘電体ゲート絶縁膜技術",,"半導体・集積回路技術第６０回シンポジウム",,,,"pp. 6-11",2001,
"岩井 洋,大見 俊一郎","次世代ゲート絶縁膜用高誘電率薄膜に関する研究",,"日本学術振興会 未来開拓学術研究推進事業 研究プロジェクト、｢次世代ULSI用薄膜材料の開発とナノスケールプロセスインテグレーション｣第８回研究会",,,,,2001,
"芦田光行,大見俊一郎,大黒達也,岩井洋","微細CMOSにおける1/f雑音のゲート長依存性",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"小林千尋,大見俊一郎,徳光永輔,石原宏,岩井洋","電子ビーム蒸着法によるLa2O3薄膜のSi基板上への形成",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"佐藤航一郎,大見俊一郎,徳光永輔,石原宏,岩井洋","電子ビーム蒸着法によりSi基板上に堆積したPr酸化物の特性",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"大島享介,大見俊一郎,徳光永輔,岩井洋,石原宏","超高真空電子ビーム蒸着法により堆積した高誘電率材料ZrO2膜の特性",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"藤村亮介,武田光弘,大見俊一郎,石原宏,岩井洋","シミュレーションによる極微細高誘電率ゲートFETの電気特性解析",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"大見俊一郎,R. S. Johnson,J. G. Hong,G. Lucovsky,岩井 洋","RPECVD法によるAl2O3のSi基板上への形成",,"第４８回応用物理学関係連合講演会",,"Vol. 2",,,2001,
"岩井洋,大見俊一郎","high-kゲート絶縁膜技術の最新研究動向と将来展望",,"Semiconductor FPD World",,"Vol. 20","No. 12","pp. 39-51",2001,
"大見俊一郎,岩井洋","アメリカを中心とするゲート絶縁膜用High-k材料の最新技術動向",,"Material Stage",,"Vol. 1","No. 2","pp. 1-11",2001,
"S.Ohmi,S. Akama,A. Kikuchi,I. Kashiwagi,C. Ohshima,J. Taguchi,H. Yamamoto,C. Kobayashi,K. Sato,M. Takeda,K. Oshima,H. Ishiwara,H.Iwai","Rare Earth Metal Oxide Gate Thin Films Prepared by E-beam Dposition",,"International Workshop on Gate Insulator 2001",,,,"pp. 200-204",2001,
"S.Ohmi,C. Kobayashi,E. Tokumitsu,H. Ishiwara,H.Iwai","Low Leakage La┣D22┫D2O┣D23┫D2 Gate Insulator Film with EOTs of 0.8-1.2 nm",,"2001 International Conference on Solid State Devices and Conferences",,,,"pp. 496-497",2001,
"S.Ohmi,C. Kobayashi,K. Aizawa,S. Yamamoto,E. Tokumitsu,H. Ishiwara,H.Iwai","High Quality La┣D22┫D2O┣D23┫D2 Films for High-k Gate Insulator",,"31st European Solid-State Device Research Conference",,,,"pp. 235-238",2001,