"An Li,Takuya Hoshii,Kazuo Tsutsui,Hitoshi Wakabayashi,Kuniyuki Kakushima","Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma",,"Japanese Journal of Applied Physics",,"Volume 63","Number 6","  066503",2024,June
"Gen Nakada,Yoshiharu Kihara,Akira Yasui,Kuniyuki KAKUSHIMA,Hiroshi Nohira","Estimation of the band alignment of metal/AlScN interfaces by hard X-ray photoelectron spectroscopy",,"Japanese Journal of Applied Physics",,"Volume 63","Number 5","  05SP14",2024,May
"Tomoya Tsutsumi,Kazuki Goshima,Yoshiharu Kirihara,Tatsuki Okazaki,Akira Yasui,Mitani Yuichiro,Kuniyuki KAKUSHIMA,Hiroshi Nohira","Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES",,,,,,,2024,Apr.
"Yukimura Tokita,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Identification of compressive strain in thin ferroelectric Al1?xScxN films by Raman spectroscopy",,"Japanese Journal of Applied Physics",,"Volume 63","Number 4","  04SP31",2024,Apr.
"Reika Ota,Shinnosuke Yasuoka,Ryoichi Mizutani,Takahisa Shiraishi,Kazuki Okamoto,Kuniyuki Kakushima,Tomoyuki Koganezawa,Osami Sakata,Hiroshi Funakubo","Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes",,"J. Appl. Phys.",,"vol. 134",,"pp. 214103-1-6",2023,Dec.
"梶川 亮介,川那子 高暢,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET","第84回応用物理学会秋季学術講演会",,,,,,2023,Sept.
"Ryosuke Kajikawa,Takamasa Kawanago,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs","International Conference on Solid State Devices and Materials",,,,,,2023,Sept.
"寺岡 楓,今井 慎也,黒原 啓太,伊東 壮真,川那子 高暢,宗田 伊理也,角嶋 邦之,若林 整","Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性","第84回応用物理学会秋季学術講演会",,,,,,2023,Sept.
"今井 慎也,梶川 亮介,川那子 高暢,宗田 伊理也,角嶋 邦之,辰巳 哲也,冨谷 茂隆,筒井 一生,若林 整","スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性","第84回応用物理学会秋季学術講演会",,,,,,2023,Sept.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure","Intermag 2023",,,,,,2023,May
"Ryo Ono,Shinya Imai,Takamasa Kawanago,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film","IEEE Electron Devices Technology and Manufacturing Conference (EDTM)",,,,,,2023,Mar.
"Peilong Wang,Atsushi Hori,Iriya Muneta,Takamasa Kawanago,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs","70th JSAP Spring meeting",,,,,,2023,Mar.
"濱田 昌也,松浦 賢太朗,濱田 拓也,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact","第70回応用物理学会春季学術講演会",,,,,,2023,Mar.
"Shinya Imai,Ryo Ono,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Shigetaka Tomiya,Kazuo Tsutsui,Hitoshi Wakabayashi","Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid","IEEE Electron Devices Technology and Manufacturing Conference (EDTM)",,,,,,2023,Mar.
"Masaki Otomo,Masaya Hamada,Ryo Ono,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer",,"Japanese Journal of Applied Physics","IOP Publishing","Vol. 62",,"p. SC1015",2023,Jan.
"Takamasa Kawanago,Ryosuke Kajikawa,Kazuto Mizutani,Sung-Lin Tsai,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 11",,"p. 15-21",2022,Nov.
"Reika Ota,Shinnosuke Yasuoka,Ryoichi Mizutani,Takahisa Shiraishi,Kuniyuki Kakushima,Hiroshi Funakubo","Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes","2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics",,,,,,2022,Nov.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure",,"Scientific Reports",,"Vol. 12",,"pp. 17199",2022,Oct.
"Shonosuke Kimura,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma","the International Workshop on Nitride Semiconductors 2022",,,,,,2022,Oct.
"川那子 高暢,梶川 亮介,水谷 一翔,Tsai Sung Lin,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"安岡慎之介,大田怜佳,岡本一輝,石濱圭佑,清水荘雄,角嶋邦之,上原雅人,山田浩志,秋山守人,小金澤智之,L. S. R. Kumara,Okkyun Seo,坂田修身,舟窪浩","メモリ応用に向けた(Al, Sc)N膜の薄膜化の検討","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"立松 真一,濱田 昌也,濱田 拓也,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","アニール処理によるWS2-Niエッジコンタクト特性の向上","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"小野 凌,今井 慎也,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"今井 慎也,小野 凌,宗田 伊理也,角嶋 邦之,辰巳 哲也,冨谷 茂隆,筒井 一生,若林 整","MoS2膜質のスパッタ成膜レート依存性調査","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"水谷 一翔,星井 拓也,川那子 高暢,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"宗田 伊理也,白倉 孝典,ファム ナムハイ,角嶋 邦之,筒井 一生,若林 整","強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"宗田 伊理也,白倉 孝典,PHAM NAM HAI,角嶋 邦之,筒井 一生,若林 整","Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2","第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム",,,,,,2022,Aug.
"阿野 響太郎,星井 拓也,若林 整,筒井 一生,依田 孝,角嶋 邦之","ゲート付きSiC pnダイオードの電気特性評価","第83回応用物理学会秋季学術講演会",,,,,,2022,Aug.
"Taiga Horiguchi,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  075506",2022,July
"M. Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,Yoshiaki Daigo,Ichiro Mizushima,T. Yoda,K. Kakushima","Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  SH1011",2022,June
"Si-Meng Chen,Sung Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Edward Yi Chang,Kuniyuki KAKUSHIMA","GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,June
"Hei Wong,Kuniyuki KAKUSHIMA","On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node",,"Nanomaterials",,"  12","  10","  1739",2022,May
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,May
"Atsuki Miyata,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure",,"Japanese Journal of Applied Physics",,"  61","  SH","  SH1005",2022,Apr.
"Ryota Shibukawa,Sung Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,Apr.
"宗田 伊理也,白倉 孝典,ファム ナム ハイ,角嶋 邦之,筒井 一生,若林 整","二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調","2022年第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Edward Y. Chang,Kuniyuki Kakushima","Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61","No. 2",,2022,Feb.
"Takamasa KAWANAGO,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya HOSHII,Kuniyuki Kakushima,Kazuo TSUTSUI,Hitoshi WAKABAYASHI","Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Takuya Hamada,Masaya Hamada,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Emi Kano,Nobuyuki Ikarashi,Hitoshi Wakabayash","Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"R. Shibukawa,S. -L. Tsai,T. Hoshii,H. Wakbayashi,K. Tsutsui,K. Kakushima","Thermal stability of ferroelectric AlScN films","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Kazuto Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Si-Meng Chen,Sung-Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation","International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Mitsuki Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Sho Sasaki,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Observation of ferroelectricity in atomic layer deposited AlN film","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"小森 勇太,木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"Takamasa Kawanago,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Nobuyuki Ikarashi,Hitoshi Wakabayashi","Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"Takuya Hamada,Taiga Horiguchi,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering","Internatonal Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"小森 勇太,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性","第69回応用物理学会春季学術講演会",,,,,,2021,Sept.
"Takuya Hamada,Masaya Hamada,Satoshi Igarashi,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET with TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box",,"Journal of the Electron Devices Society (J-EDS)",,"Vol. 9",,"p. 1117",2021,Aug.
"Hei Wong,Jieqiong Zhang,HIROSHI IWAI,Kuniyuki KAKUSHIMA","Characteristic Variabilities of Subnanometer EOT La2O3 Gate Dielectric Film of Nano CMOS Devices",,"Nanomaterials",,"Vol. 11","No. 8",,2021,Aug.
"Masaya Hamada,Takuya Hamada,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Side-Contact Architecture for p/n-Stacked-Nano-Sheet ZrS2 2D-FETs Beyond 1-nm Technology Node","International Workshop on Junction Technology (IWJT2021)",,,,,,2021,June
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBA05",2021,Apr.
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices","IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)","Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)",,,,"pp. 217-219",2021,Apr.
"筒井一生,濱田拓也,高山 研,金 相佑,星井拓也,角嶋邦之,若林 整,高橋言緒,井手利英,清水三聡","選択成長法を用いたGaN 系FinFET","電気学会電子デバイス研究会",,,,,,2021,Mar.
"S-L. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,T-K. Chung,E. Chang,K. Kakushima","Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering",,"Applied Physics Letters",,"Vol. 118","No. 8","Page 82902",2021,Feb.
"Junji Kataoka,Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","A possible origin of the large leakage current in ferroelectric Al1-xScxN films",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30907",2021,Feb.
"Jinhan Song,Atsuhiro Ohta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30901",2021,Feb.
"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Shigetaka Tomiya,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of Crystallinity Improvement in MoS2 film just after MoS2-Compound Sputtering even followed by Post Sulfurization for Chip-Size Fabrication",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH10",2021,Feb.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Symmetrical-Ambipolar FETs with Near-Midgap TiN Film for Both Top-Gate electrode and Schottky-Barrier Contact",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH05",2021,Jan.
"Takuya Hamada,Shigetaka Tomiya,Tetsuya Tatsumi,Masaya Hamada,Taiga Horiguchi,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Sheet Resistance Reduction of MoS2 Film using Sputtering and Chlorine Plasma Treatment followed by Sulfur Vapor Annealing",,"Journal of the Electron Devices Society (J-EDS)",,"Vol. 9",,"Page 278-285",2021,Jan.
"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned-TiSi2 Bottom Contact with APM Cleaning and Post-annealing for Sputtered-MoS2 Film",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBH04",2021,Jan.
"Takuya Saraya,Kazuo Ito,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Katsumi Satoh,Tomoko Matsudai,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology","International Electron Devices Meeting (IEDM) 2020",,,,,,2020,Dec.
"S. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Highly Oriented Growth of AlxSc1-xN Ferroelectric Film on W Bottom Electrodes","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
""Atsuhiro Ohta,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima"","Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"H. Nishida,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","A simulation study on the transient leakage current analysis of a GaN epitaxial layer","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
""Kazuto Mizutani,Yu-Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima"","Observation of wake-up effect on ferroelectric Y:HfO2 thickness scaling","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"Y.-W. Lin,K. Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,Y.-F. Tsao,T.-J. Huang,H.-T. Hsu,K. Kakushima","Ferroelectric HfO2 Capacitors for Varctor Application in GHz","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"A. Miyata,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Photocurrent measurements of AlGaN/GaN HEMT under X-ray irradiation","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Haruki Tanigawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Sulfurization even through Al2O3 Passivation Film Simultaneously Preventing Oxidation",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59","No. 10","Page 105501",2020,Sept.
"Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Shigetaka Tomiya,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Kazuo Tsutsui,Hitoshi Wakabayashi","Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Sunglin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Thickness Scaling on Ferroelectric Al0.8Sc0.2N Films","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Satoshi Igarashi,Yusuke Mochiduki,Haruki Tanigawa,Masaya Hamada,Kentaro Matsuura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"Masaya Hamada,Kentaro Matsuura,Takuya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack","International Conference of Solid State Devices and Materials (SSDM) 2020",,,,,,2020,Sept.
"木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/(AlN)/GaN構造におけるキャリア移動度の温度依存性","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"門 龍翔,横川 凌,沼沢 陽一郎,筒井 一生,角嶋 邦之,小椋 厚志","Si-IGBT作製プロセスにおける水素熱処理の影響","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"筒井 一生,松橋 泰平,星井 拓也,角嶋 邦之,若林 整,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,室 隆桂之,松下 智裕,森川 良忠","AsおよびBの共ドープによるSi中Asクラスターの特性制御","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"高山 研,太田 貴士,佐々木 満孝,向井 勇人,濱田 拓也,高橋 言雄,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,筒井 一生","選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"久恒 悠介,金 相佑,星井 拓也,角嶋 邦之,若林 整,筒井 一生","横型GaN FinFETの構造最適化についての検討","第81回応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Kazuto Mizutani,Yu Wei Lin,Takuya Hoshii,Hiroshi Funakubo,Hitoshi Wakabayashi,Kazuto Tsutsui,Kuniyuki Kakushima","Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing","2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications)",,,,,,2020,Aug.
"Kentaro Matsuura,Masaya Hamada,Takuya Hamada,Haruki Tanigawa,Takuro Sakamoto,Atsushi Hori,Iriya Muneta,Takamasa Kawanago,Kuniyuki Kakushima,Kazuo","Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 59","No. 8","Page 80906",2020,Aug.
"Kiyoshi Takeuchi,Munetoshi Fukui,Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Shinichi Suzuki,Yohichiroh Numasawa,Naoyuki Shigyo,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Masanori Tsukuda,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs",,"IEEE Trans. On Semiconductor Manufactureing",,"Vol. 33","No. 2","pp. 159-165",2020,May
"J. Molina,T. Mimura,Y. Nakamura,T. Shimizu,H. Funakubo,I. Fujiwara,T. Hoshii,S. Ohmi,A. Hori,H. Wakabayashi,K. Tsutsui,K. Kakushima","Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance","2020 IMW (The 12th International Memory Workshop)",,,,,,2020,May
"Haruki Tanigawa,Kentaro Matsuura,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Enhancement-Mode Accumulation Capacitance-Voltage Characteristics in TiN/ALD-Al2O3/Sputtered-MoS2 Top-Gated Stacks",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"Jinan Song,Lyu Wei Lin,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Atomic Layer Deposition of Y2O3 Thin Films with a High Growth per Cycle by Ar Multiple Boost Injection",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 59",,,2020,Apr.
"松橋 泰平,星井 拓也,沖田 寛昌,中島 昭,角嶋 邦之,若林 整,筒井 一生","分極接合基板における2DEG枯渇電圧の解析的導出","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"木村 安希,星井 拓也,宮野 清孝,布上 真也,名古 肇,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/GaNヘテロ構造におけるキャリア輸送特性のAlNスペーサ層膜厚依存性","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"松浦 賢太朗,濱田 昌也,濱田 拓也,谷川 晴紀,坂本 拓朗,堀 敦,宗田 伊理也,川那子 高暢,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs","第67回応用物理学会春期学術講演会",,,,,,2020,Mar.
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Kuniyuki Kakushima,Takuya Hoshii,Kazuo Tsutsui,Hiroshi Iwai,Shin-ichi Nishizawa,Ichiro Omura,Toshiro Hiramoto","Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Mar.
"Tomohiko Yamagishi,Atsushi Hori,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Japanese Journal of Applied Physics",,"Vol. 59","No. SG",,2020,Feb.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 59",,"pp. SGGB06-1-6",2020,Feb.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization",,"Journal of the Electron Devices Society (J-EDS)","IEEE","Vol. 7","No. 1","pp. 1258-1263",2019,Dec.
"K. Tsutsui,K. Natori,T. Ogawa,T. Muro,T. Matsuishita,Y. Morikawa,T. Hoshii,K. Kakushima,H. Wakabayashi,K. Hayashi,F. Matsui,T. Kinoshita","Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography","Material Resarch Meeing 2019 (MRM2019)",,,,,,2019,Dec.
"Takuya Hamada,Shinpei Yamaguchi,Taiga Horiguchi,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film","Material Resarch Meeing 2019 (MRM2019)",,,,,,2019,Dec.
"Y. W. Lin,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"Jinhan Song,A. Ohta,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"H. Tanigawa,K. Matsuura,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"Kuan Ning Huang,Yueh-Chin Lin,Jia Ching Lin,Chia Chieh Hsu,Jin Hwa Lee,Chia-Hsun Wu,Jing Neng Yao,Heng-Tung Hsu,Venkatesan Nagarajan,Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,Edward Yi Chang,Chao Hsin Chien","Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications",,"Journal of Electronic Materials",,"Vol. 49",,"pp. 1348?1353",2019,Nov.
"T. Kinoshita,T. Matsushita,T. Muro,T. Ohkochi,H. Osawa,K. Hayashi,F. Matsui,K.Tsutsui,K. Natori,Y. Morikawa,T. Hoshii,K. Kakushima,H. Wakabayashi,A. Takeda,K. Terashima,W. Hosoda,T. Fukura,Y. Yano,H. Fujiwara,M. Sunagawa,H. Kato,T. Oguchi,T. Wakita,Y. Muraoka,T. Yokoya","Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites","T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya",,,,,,2019,Nov.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing",,"Applied Physics Letters",,"Vol. 115",,"p. 192404",2019,Nov.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography","8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)",,,,,,2019,Nov.
"Takuya Hoshii,Hiromasa Okita,Taihei Matsuhashi,Indraneel Sanyal,Yu-Chih Chen,Ying-Hao Ju,Akira Nakajima,Kuniyuki Kakushima,Hitoshi Wakabayashi,Jen-Inn Chyi,Kazuo Tsutsui","Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE","The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)",,,,,,2019,Nov.
"渡辺正裕,執行直之,星井拓也,古川和由,角嶋邦之,佐藤克己,末代知子,更屋拓哉,高倉俊彦,伊藤一夫,福井宗利,鈴木慎一,竹内 潔,宗田伊里也,若林 整,中島 昭,西澤伸一,筒井一生,平本俊郎,大橋弘通,岩井洋","トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション","電子情報通信学会 SDM(シリコン材料・デバイス)研究会","電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 119","No. 273","pp. 45-48",2019,Nov.
"T. Hiramoto,T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,H. Wakabayashi,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohash","Switching of 3300V Scaled IGBT by 5V Gate Drive","ASICON (International Conference on ASIC)",,,,,,2019,Oct.
"太田 惇丈,宋 ?漢,星井 拓也,若林 整,筒井 一生,角嶋 邦之","原子層堆積法を用いたイットリウムシリケート薄膜の形成","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing","The 80th JSAP Autumn meeting",,,,,,2019,Sept.
"松橋 泰平,星井 拓也,沖田 寛昌,Indraneel Sanyal,Yu-Chih Chen,Ying-Hao Ju,中島 昭,角嶋 邦之,若林 整,Jen-Inn Chyi,筒井 一生","TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"今井 慎也,濱田 昌也,五十嵐 智,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","硫化プロセスにおけるスパッタMoS2膜質向上の重要性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"五十嵐 智,望月 祐輔,谷川 晴紀,濱田 昌也,松浦 賢太朗,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"谷川 晴紀,松浦 賢太朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"木村 安希,久永 真之佑,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing","Solid State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"Tomohiko Yamagishi,Atsushi Hori,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,K. Kakushima,T. Hoshii,K. Tsutsui,H. Iwai,S. Nshizawa,I. Omura,T. Hiramoto","Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"宋 ジンハン,太田 惇丈,星井 拓也,若林 整,筒井 一生,角嶋 邦之","Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"山岸 朋彦,堀 敦,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"草深 一樹,Sunglin Tsai,星井 拓也,若林 整,筒井 一生,角嶋 邦之","スパッタリングによって形成したAlScN膜のリーク電流の評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"西田 宗史,星井 拓也,片岡 寛明,筒井 一生,角嶋 邦之,若林 整","ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"宮田 篤希,齋藤 大樹,星井 拓也,若林 整,筒井 一生,角嶋 邦之","4H-SiCエピタキシャル層によるX線検出に関する検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"神林 郁哉,星井 拓也,角嶋 邦之,若林 整,筒井 一生","Si(111)基板上GaNのためのMgF2バッファの検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"蔡 松霖,草深 一樹,星井 拓也,若林 整,筒井 一生,角嶋 邦之","スパッタリングを用いたAlScN膜の形成","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"濱田 昌也,松浦 賢太朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"沖田 寛昌,星井 拓也,松橋 泰平,Sanyal Indraneel,Chen Yu-Chih,Ju Ying-Hao,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,Chyi Jen-Inn,筒井 一生","TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"濱田 拓也,堀口 大河,辰巳 哲也,冨谷 茂隆,濱田 昌也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"井上 毅哉,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"向井 勇人,?山 研,濱田 拓也,高橋 言緒,井手 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","選択成長法を用いたGaN FinFETの作製","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"高山 研,向井 勇人,濱田 拓也,高橋 言緒,井手 利英,清水 三総,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","GaN Fin構造選択成長における低抵抗領域の発生原因の検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"堀口 大河,濱田 拓也,辰巳 哲也,冨谷 茂隆,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"更屋 拓哉,伊藤 一夫,高倉 俊彦,福井 宗利,鈴木 慎一,竹内 潔,附田 正則,沼沢 陽一郎,佐藤 克己,末代 知子,齋藤 渉,角嶋邦之,星井 拓也,古川 和由,渡辺正裕,執行 直之,筒井一生,岩井洋,小椋 厚志,西澤 伸一,大村 一郎,大橋 弘通,平本 俊郎","5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 118","No. 429","pp. 39-44",2019,Aug.
"Takuya Hoshii,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces","13tu Int. Conf. on Nitride Semiconductor (ICNS)",,,,,,2019,July
"Iriya Muneta,Naoki Hayakawa,Takanori Shirokura,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetic tunnel devices with two-dimensional layered material MoS2","Collaborative Conference on Materials Research (CCMR) 2019",,,,,,2019,June
"Takuya Hoshii,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI","Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates",,"Japanese Journal of Applied Physics",,"Vol. 58","No. 6","pp. 061006",2019,June
"星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価","日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会",,,,,,2019,June
"K. Matsuura,M. Hamada,T. Hamada,H. Tanigawa,T. Sakamoto,W. Cao,K. Parto,A. Hori,I. Muneta,T. Kawanago,K. Kakushima,K. Tsutsui,A. Ogura,K. Banerjee,H. Wakabayashi","Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration","Int. Workshop on Juction Technology (IWJT2019)",,,,,,2019,June
"筒井一生,松下 智裕,名取 鼓太?,小川 達博,室 隆桂之,森川 良忠,星井 拓也,角嶋邦之,若林整,林 好一,松井 文彦,木下 豊彦","光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 119","No. 96","pp. 23-27",2019,June
"Joel Molina-Reyes,Haruki Iwatsuka,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing","VLSI 2019 (2019 Symposia on VLSI Technology and Circuits)",,,,,,2019,June
"J. Molina,H. Iwatsuka,T. Hoshii,S. Ohmi,H. Funakubo,A. Hori,I. Fujiwara,H. Wakabayashi,K. Tsutsui,K. Kakushima","Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode","235th ECS Meeting",,,,,,2019,May
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Yohichiroh Numasawa,Katsumi Satoh,Tomoko Matsudai,Wataru Saito,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Naoyuki Shigyo,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Shin-Ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramo","3300V Scaled IGBTs Driven by 5V Gate Voltag","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Toshihiro Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"M. Fukui,T. Saraya,K. Itou,T. Takakura,S. Suzuki,K. Takeuchi,K. Kakushima,T. Hoshii,K. Tsutsui,H. Iwai,S. Nishizawa,I. Omura,T. Hiramoto","Turn-Off Loss Improvement by IGBT Scaling","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,May
"K. Sasaki,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer","235th ECS Meeting",,,,,,2019,May
"K. Hisatsune,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,K. Kakushima","Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors","235th ECS Meeting",,,,,,2019,May
"濱田 拓也,向井 勇人,高橋 言緒,井手 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","FinFET応用に向けた選択成長GaNチャネルの電気特性","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"筒井 一生,松下 智裕,名取 鼓太?,小川 達博,室 隆桂之,森川 良忠,星井 拓也,角嶋 邦之,若林 整,林 好一,松井 文彦,木下 豊彦","光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"Takeya Inoue,Takuya Hoshii,Takuo Kikuchi,Hidehiko Yabuhara,Kazuyuki Ito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Junichi Tonotani,Kazuo Tsutsui","Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices","3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)",,,,,,2019,Mar.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing","3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)",,,,,,2019,Mar.
"筒井 一生,松下 智裕,名取 鼓太?,室 隆桂之,森川 良忠,星井 拓也,角嶋 邦之,若林 整,林 好一,松井 文彦,木下 豊彦","光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"松浦 賢太朗,濱田 昌也,坂本 拓朗,谷川 晴紀,宗田 伊理也,石原 聖也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"筒井一生,松下智裕,室隆桂之,森川良忠,名取鼓太郎,小川達博,星井拓也,角嶋邦之,若林整,林好一,松井文彦,木下豊彦","光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析","応用物理学会シリコンテクノロジー分科会第216回研究集会",,,,,,2019,Feb.
"松浦賢太朗,清水淳一,外山真矢人,大橋匠,坂本拓朗,宗田伊理也,石原聖也,角嶋邦之,筒井一生,小椋厚志,若林整","大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用","応用物理学会シリコンテクノロジー分科会第216回研究集会",,,,,,2019,Feb.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Magnetic property in sputtered MoS2 thin film on growth temperature","第23回 半導体におけるスピン工学の基礎と応用（PASPS-23)",,,,,,2018,Dec.
"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohashi,T. Hiramoto","Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss","International Electron Devices Meeting (IEDM2018)",,,,,,2018,Dec.
"K. Sasaki,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Minority Carrier Lifetime Measurement for SiC Epitaxial Layer","The 5th Meeting on Advanced Power Semiconductors",,,,,,2018,Nov.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout",,"Journal of the Electron Devices Society (J-EDS)",,"vol. 8",,"pp. 1244-1250",2018,Nov.
"Takuya Hoshii,Shuma Tsuruta,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"Takuya Hamada,Hayato Mukai,Tokio Takahashi,Toshihide Ide,Mitsuaki Shimizu,Hiroki Kuroiwa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Kazuo Tsutsui","Electrical properties of selectively grown GaN channel for FinFETs","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 6",,"pp. 1251 - 1257",2018,Nov.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi,N. Ikarashi","Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing",,"Journal of the Electron Devices Society",,"Vol. 7","No. 1","p. 2",2018,Oct.
"Toyohiko Kinoshita,Tomohiro Matsushita,Takayuki Muro,Takuo Ohkochi,Hitoshi Osawa,Kouichi Hayashi,Fumihiko Matsui,Kazuo Tsutsui,Kotaro Natori,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Aya Taked,Kensei Terashim,Wataru Hosoda,Tetsuji Fukura,Yuukou Yano,Hirohkazu Fujiwara,Masanori Sunagawa,Hiromitsu Kato,Tamio Oguchi,Takanori Wakita,Yuuji Muraoka,Takayoshi Yokoya","Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites","14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)",,,,,,2018,Oct.
"M. Hamada,K. Matsuura,T. Sakamoto,H. Tanigawa,T. Ohashi,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film","2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"T. Sakamoto,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,Y. Suzuki,N. Ikarashi,H. Wakabayashi","Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy","IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography","International Conference on Solid-State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"Kazuya Hisatsune,Yoshihisa Takaku,Kohei Sasa,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors","Int. Conf. on Sold State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Growth temperature dependence of magnetic property of sputtered MoS2 thin film","The 79th JSAP Autumn meeting",,,,,,2018,Sept.
"松浦 賢太朗,清水 淳一,外山 真矢人,大橋 匠,宗田 伊理也,石原 聖也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"小川 達博,名取 鼓太郎,星井 拓也,仲武 昌史,渡辺 義夫,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,角嶋 邦之,若林 整,筒井 一生","フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"谷川 晴紀,松浦 賢太朗,濱田 昌也,坂本 拓朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"向井 勇人,濱田 拓也,高橋 言緒,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"五十嵐 智,松浦 賢太朗,濱田 昌也,谷川 晴紀,坂本 拓朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"佐々木 杏民,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響",,,,,,,2018,Sept.
"佐々 康平,久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","酸化セリウムを挿入したMIMキャパシタの充放電特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"岩塚 春樹,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","Siを導入したHfO2のMIMキャパシタの容量特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久永 真之佑,渡部 拓巳,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"鶴田 脩真,星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"清水 孝,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","TMAHによる表面処理のp型GaN/金属コンタクト特性への影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"井上 毅哉,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"神林 郁哉,星井 拓也,角嶋 邦之,若林 整,筒井 一生","Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Masahiro Watanabe,Naoyuki Shigyo,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Sinichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately","44th European Solid-State Circuits Conference (ESSDERC2018)",,,,,,2018,Sept.
"I. Muneta,Danial B. Z.,N. Hayakawa,K. Kakushima,K. Tsutsui,H. Wakabayashi","Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate","International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS)",,,,,,2018,Aug.
"濱田拓也,向井勇人,高橋言緒,井手利英,清水三聡,星井拓也,角嶋邦之,若林整,岩井洋,筒井一生","FinFET応用に向けた選択成長GaNチャネルの電気特性","第82回半導体・集積回路シンポジウム",,,,,,2018,Aug.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing",,"JPN J APPL PHYS",,"  57",,"  07MA04",2018,June
"K. Kakushima,T. Hoshii,M. Watanabe,N. Shigyo,K. Furukawa,T. Saraya,T. Takakura,K. Itou,M. Fukui,S. Suzuki,K. Takeuchi,I. Muneta,H. Wakabayashi,Y. Numasawa,A. Ogura,S. Nishizawa,K. Tsutsui,T. Hiramoto,H. Ohashi,H. Iwai","New methodology for evaluating minority carrier lifetime for process assessment","Symp. On VLSI Technology (VLSI2018)",,,,,,2018,June
"D. Saito,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Reliability of SiC Schottky Diodes with Mo2C Electrode","ECS Meeting",,,,,,2018,May
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakaw,Kuniyuki Kakushima","Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing",,"Microelectronics Reliability",,"vol. 84",,"pp. 226-229",2018,May
"C. Y. Su,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3","ECS Meeting",,,,,,2018,May
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakawa,Kuniyuki Kakushima","Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors",,"Microelectronics Reliability",,"vol. 84",,"pp. 248-252",2018,May
"H. Kataoka,H. Iwai,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","A Defect Density Profile Extraction Method for GaN Epi-Wafers","ECS Meeting",,,,,,2018,Apr.
"Akira Nakajima,Shunsuke Kubota,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Shin-ichi Nishizawa,Hiromichi Ohashi","GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform",,"IET Power Electronics",,"Vol. 11","No. 4","pp. 689-694",2018,Apr.
"Zulkornain Bin Danial,宗田 伊理也,早川 直希,角嶋 邦之,筒井 一生,若林 整","Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"坂本 拓朗,大橋 匠,松浦 賢太朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減",,,,,,,2018,Mar.
"大橋 匠,坂本 拓朗,松浦 賢太朗,清水 淳一,外山 真矢人,石原 聖也,日比野 祐介,宗田 伊理也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","Migration制御したスパッタリング法による2次元層状MoS2成膜","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"Chen-Yi Su,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3","65th JSAP Spring meeting",,,,,,2018,Mar.
"Suguru Tatsunokuchi,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,HIROSHI IWAI,K. Kakushima","Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure","China Semiconductor Technology International Conference (CSTIC2018)",,,,,,2018,Mar.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique","Intnational Workshop on Junction Technology (IWJT2018)",,,,,,2018,Mar.
"N. Hayakawa,Iriya Muneta,Takumi Ohashi,Kenntarou Matsuura,Junnichi Shimizu,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control",,"Japan Journal of Applied Physics","IOP Publishing","Vol. 57",,"  04FP13",2018,Mar.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate","2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",,,,"pp. 104-106",2018,Mar.
"安重 英祐,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"K. Matsuura,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization",,"Journal of Electrical Materials","Springer US","Vol. 47","No. 7","pp. 3497",2018,Mar.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout","The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018)",,,,,,2018,Mar.
"Kotaro Natori,Tatsuhiro Ogawa,Takuya Hoshii,Tomohiro Matsushia,Takayuki Muro,Toyohiko Kinoshita,Yoshitada Morikawa,Kuniyuki Kakushima,Fumihiko Matsui,Kouichi Hayashi,Hitoshi Wakabayashi,Kazuo Tsutsui","Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography","11th Int. Symp. on Atomic Level Characterization (ALC'17)",,,,,,2017,Dec.
"筒井一生,角嶋邦之,星井 拓也,中島 昭,西澤 伸一,若林整,宗田伊理也,佐藤 克己,末代 知子,齋藤 渉,更屋 拓哉,伊藤 一夫,福井 宗利,鈴木 慎一,小林 正治,高倉 俊彦,平本 俊郎,小椋 厚志,沼沢 陽一郎,大村 一郎,大橋 弘通,岩井洋","三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)",,"電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan","電気学会","Vol. 2017","No. 74","pp. 1-6",2017,Nov.
"Suguru Tatsunokuchi,Iriya Muneta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Photovoltaic Properties of Lateral Si Nano Wall Solar Cells","2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017)",,,,,,2017,Nov.
"Kazuo Tsutsui,Tomohiro Matsushita,Kotaro Natori,Takayuki Muro,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography",,"Nano Letters",,"Vol. 17",,"pp. 7533-7538",2017,Nov.
"K. Tsutsui,K. Kakushima,T. Hoshii,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)","ASICON2017","Proceedings of International Conference on ASIC",,"Vol. 2017-October",,"pp. 1137-1140",2017,Oct.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing","Advanced Metallization Conference 2017: 27th Asian Session",,,,,,2017,Oct.
"Takuya Hoshii,Rumi Takayama,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate","International Conference on Solid-State Devices and Materials (SSDM2017)",,,,,,2017,Sept.
"N. Hayakawa,I. Muneta,T. Ohashi,K. Matsuura,J. Shimizu,K. Kakushima,K. Tsutsui,H. Wakabayashi","Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure","International Conference on Solid State Devices and Materials",,,,,,2017,Sept.
"Yueh Chin Lin,Yu Xiang Huang,Gung Ning Huang,Chia Hsun Wu,Jing Neng Yao,Chung Ming Chu,Shane Chang,Chia Chieh Hsu,Jin Hwa Lee,Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,Edward Yi Chang","Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application",,"IEEE Electron Device Letters",,"Vol. 38","No. 8","pp. 1101-1104",2017,Aug.
""K. Kakushima","T. Seki","H. Wakabayashi","K. Tsutsui","H. Iwai"","Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates",,"Vacuum",,"Vol. 149",,"pp. 14-18",2017,June
"K. Kakushima,Yuta Ikeuchi,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,T. Kikuchi,S. Ishikawa","Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"岡田 泰典,山口 晋平,大橋 匠,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas","International Workshop on Junction Technology",,,,,,2017,June
"S. Hirano,J. Shimizu,K. Matsuura,T. Ohashi,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films","2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 234-235",2017,June
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi","Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET","IEEE Electron Device Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 222-223",2017,June
"K. Kakushima,T. Suzuki,T. Hoshii,I. Muneta,H. Wakabayashi,HIROSHI IWAI,Y. Aoki,H. Nohira Aoki,KAZUO TSUTSUI","Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"篠原 健朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Takumi Ohashi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness",,"Applied Physics Express","IOP Publishing","Vol. 10",,,2017,Mar.
"早川直希,宗田伊理也,大橋匠,松浦賢太朗,清水淳一,角嶋邦之,筒井一生,若林整","トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"外山 真矢人,大橋 匠,松浦 賢太朗,清水 淳一,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"龍口 傑,星井 拓也,宗田 伊理也,若林 整,筒井 一生,岩井 洋,角嶋 邦之","横型Siナノウォール太陽電池の発電特性に関する検討","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
""Jun’ichi Shimizu","Takumi Ohashi","Kentaro Matsuura","Iriya Muneta","Kuniyuki Kakushima","Kazuo Tsutsui","Hitoshi Wakabayashi"","High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 56","No. 4S",,2017,
"Y. Ikeuchi,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,S.Ishikawa","Characteristics of Fe/pGaN Contact upon Annealing Process","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"Y. M. Lei,T. Kaneko,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima,M. Furuhashi,S. Tomohisa,S. Yamakawa","Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"K. Kakushima,T. Hoshii,K. Tsutsui,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT","62th International Electron Devices Meeting (IEDM2016)",,,,,"p. 268",2016,Dec.
"Tomoyuki Suzuki,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Hiroshi Nohira,Kuniyuki Kakushima","Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode","47th IEEE Semiconductor Interface Specialists Conference (SISC2016)",,,,,,2016,Dec.
"安重 英祐,大橋 匠,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
""R. Miyazawa","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells",,"International Journal of High Speed Electronics and Systems (IJHSES)",,"Vol. 25","No. 1-2","Page 1640008(7pages)",2016,Sept.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC","International Conference on Solid State Devices and Materials",,,,,,2016,Sept.
""M.S. Hadi","N. Sugii","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes",,"Microelectronics Reliability",,"Vol. 63",,"pp. 42-45",2016,Aug.
"Akira Nakajima,Shunsuke Kubota,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Sin-ichi Nishizawa,Hiromichi Ohashi","Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs","13th International Seminar on Power Semiconductors (ISPS)",,,,,,2016,Aug.
""J. Chen","H. Wakabayashi","K. Tsutsui","H. Iwai","K. Kakushima"","Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current",,"Microelectronic Reliability",,"Vol. 63",,"pp. 52-55",2016,Aug.
""Tomoyuki Suzuki","Hitoshi Wakabayashi","Kazuo Tsutsui","Hiroshi Iwai","Kuniyuki Kakushima"","Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics",,"IEEE Electron Device Letters (EDL)",,"Vol. 37","No. 5","pp. 618-620",2016,May
"Yusuke Takei,Kazuo Tsutsui,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai","Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 4",,2016,Apr.
"K. Matsuura,T. Ohashi,I. Muneta,S. Ishihara,N. Sawamoto,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film",,"Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC)",,,,,2016,
""J. Chen","T. Kawanago","H. Wakabayashi","K. Tsutsui","H. Iwai","D. Nohata","H. Nohira","K. Kakushima"","La2O3 gate dielectrics for AlGaN/GaN HEMT",,"Microelectronics Reliability",,"Vol. 60",,"pp. 16-19",2016,
"Shunsuke Kubota,Rei Kayanuma,Akira Nakajima,Shin-ichi Nishizawa,Shin-ichi Nishizawa,Hiromichi Ohashi,Hitoshi Wakabayashi,Kazuo Tsutsui","P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation","2015 Material Research Society (MRS) Fall Meeting",,,,,,2015,Nov.
"Yusuke Takei,Tomohiro Shimoda,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai","Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns","2015 Material Research Society (MRS) Fall Meeting",,,,,,2015,Nov.
"A. Nakajima,S. Kubota,R. Kayanuma,K. Tsutsui,K. Kakushima,H. Wakabayashi,H. Iwai,S. Nishizawa,H. Ohashi","An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform","2015 IEEE Compound Semiconductor IC Symposium (CSICS2015)",,,,,,2015,Oct.
"Akira Nakajima,Shin-Ichi Nishizawa,Hiromichi Ohashi,Rei Kayanuma,Kazuo Tsutsui,Shunsuke Kubota,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai","GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform","The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015)",,,,,,2015,May
"T. Ohashi,K. Suda,S. Ishihara,N. Sawamoto,S. Yamaguchi,K. Matsuura,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai,A. Ogura,H. Wakabayashi","Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs",,"Japan Journal of Applied Physics",,"Vol. 54","No. 4S",,2015,Mar.
""Yusuke Takei","Masayuki Kamiya","Kazuo Tsutsui","Wataru Saito","Kuniyuki Kakushima","Hitoshi Wakabayashi","Yoshinori Kataoka","Hiroshi Iwai"","Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers",,"Physica Status Solidi A",,"Vol. 212","No. 5","pp. 1104-1109",2015,Feb.
"M. Okamoto,K. Kakushima,Y. Kataoka,K. Natori,H. Wakabayashi,K. Tsutsui,H. Iwai,W. Saito","Dependence of Ti/C Ratio on Ohmic contact with TiC electrode for AlGaN/GaN structure","WiPDA",,,,,,2014,Oct.
""Mokh Hadi","Shinichi Kano","Kuniyuki Kakushima","Yoshinori Kataoka","Akira Nishiyama","Nobuyuki Sugii","Hitoshi Wakabayashi","Kazuo Tsutsui","Kenji Natori","Hiroshi Iwai"","A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer",,"Semiconductor Science and Technology",,"Vol. 29","No. 11",,2014,Oct.
"N. Nishizawa,T. Kawanago,K. Kakushima,H. Munekata","Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa","18th International Conference on Molecular Beam Epitaxy","Abstracts",,,,"p. 44",2014,Sept.
"T. Shoji,K. Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells","29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014)",,,,,,2014,Sept.
"Kazuo Tsutsui,Masayuki Kamiya,Yusuke Takei,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Yoshinori Kataoka,Hiroshi Iwai","Low-resistive Contact Formation on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers","The International Workshop on Nitride Semiconductors (IWN2014)",,,,,,2014,Aug.
""Y. Wu","H. Hasegawa","K. Kakushima","K. Ohmori","T. Watanabe","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","Y. Kataoka","K. Natori","K. Yamada","H. Iwai"","A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability",,"Microelectronics Reliability",,"Vol. 54","No. 5","pp. 899-904",2014,May
"Y. Takei,M. Okamoto,W. Saito,K. Tsutsui,K. Kakushima,H. Wakabayashi,Y. Kataoka,H. Iwai","Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures","225th ECS Meeting",,,,,,2014,May