"西山 伸彦,丸山 武男,大礒 義孝,雨宮 智宏,岩崎孝之,波多野 睦子","磁気センサの大型化を可能とする導波路集積型ダイヤモンドセンサ構造の提案","第67回応用物理学会春季学術講演会","第67回応用物理学会春季学術講演会予稿集",,,,,2020,Mar.
"S. Arai,N. Nishiyama,T. Maruyama,T. Okumura","GaInAsP/InP Membrane Lasers for Optical Interconnects",,"IEEE J. Sel. Top. Quantum Electron.","IEEE","Vol. 17","No. 5","pp. 1381 - 1389",2011,Sept.
"Tadashi Okumura,Munetaka Kurokawa,Mizuki Shirao,daisuke kondo,Hitomi Ito,Nobuhiko Nishiyama,Takeo Maruyama,SHIGEHISA ARAI","Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits",,"Opt. Express",,"Vol. 17","No. 15","pp. 12564-12570",2009,July
"Nobuhiko NISHIYAMA,Takeo MARUYAMA,Shigehisa ARAI","III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI","IPRM 2009",,"IEEE",,,"  WB1.1",2009,May
"SHIGEHISA ARAI,Takeo Maruyama","GaInAsP/InP Quantum-Wire Lasers",,"IEEE J. Select. Topics in Quantum Electron.","IEEE","Vol. 15","No. 3","pp. 731-742",2009,May
"西山伸彦,丸山武男,荒井滋久","シリコン基板上半導体レーザ・発光デバイスの現状","2009年電子情報通信学会総合大会",,,,,"  CI-2-4",2009,Mar.
"Tadashi Okumura,Takeo Maruyama,HIDENORI YONEZAWA,Nobuhiko Nishiyama,SHIGEHISA ARAI","Injection-type GaInAsP-InP-Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate",,"IEEE Photonics Technol. Lett.",,"Vol. 21","No. 5","pp. 283-285",2009,Mar.
"Keita Inoue,Dhanorm Plumwongrot,Nobuhiko Nishiyama,Shinichi Sakamoto,Haruki Enomoto,Shigeo Tamura,Takeo Maruyama,Shigehisa Arai","Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60",,"Jpn. J. Appl. Phys.",,"vol. 48","no. 3","p. 030208",2009,Mar.
"荒井滋久,丸山武男,西山伸彦,奥村忠嗣,黒川宗高,白尾瑞基,米澤英徳,近藤大介,伊藤瞳","シリコンフォトニクス光源","シリコンフォトニクス技術分科会","シリコンフォトニクス技術分科会","JEITA（社 電子情報技術産業協会）",,,,2008,Dec.
"荒井滋久,丸山武男,西山伸彦,奥村忠嗣,黒川宗高,白尾瑞基,米澤英徳,近藤大介,伊藤瞳","SOI上の半導体薄膜レーザ",,"電子情報通信学会シリコンフォトニクス研究会","電子情報通信学会","  東京","  SiPH2008-15","pp. 19?24",2008,Nov.
"Keita Inoue,Dhanorm Plumuwongrot,Nobuhiko Nishiyama,Shinichi Sakamoto,Haruki Enomoto,Shigeo Tamura,Takeo Maruyama,Shigehisa Arai","Loss Reduction of SiWireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60","The IEEE Nanotechnology Materials and Devices Conference 2008","IEEE NMDC2008",,,,,2008,Oct.
"Keita Inoue,Nobuhiko Nishiyama,Haruki Enomoto,Shigeo tamura,Takeo Maruyama,Shigehisa Arai","Evaluation of Si Wire Waveguide Fabricated by Parallel Plate RIE Process using Double Layered EB Resist Containing C60","iNOW 2008","Digest of iNOW2008",,,"No. 3-P24",,2008,Aug.
"HIDENORI YONEZAWA,Takeo Maruyama,Tadashi Okumura,Nobuhiko Nishiyama,SHIGEHISA ARAI","Injection Type GaInAsP/InP DFB Lasers",,"2008 International Nano-Optoelectronics Workshop",,,"No. session4-P16",,2008,Aug.
"奥村忠嗣,丸山武男,米澤英徳,西山伸彦,荒井滋久","SOI基板への直接貼り付け法によるGaInAsP/InP DFBレーザ",,"電子情報通信学会レーザ・量子エレクトロニクス研究会.",,"Vol. 東京","No. LQE2008-29","pp. pp. 45-50",2008,June
"PDHANORM,Takeo Maruyama,Anisul Haque,Yagi Hideki,Koji Miura,Yoshifumi Nishimoto,SHIGEHISA ARAI","Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures",,"Jpn. J. Appl. Phys.",,"Vol. 47","No. 5","pp. 3735-3741",2008,May
"Munetaka Kurokawa,Plum Wongrot Dhanorm,Koji Ozawa,Takeo Maruyama,Nobuhiko Nishiyama,Shigehisa Arai","RIE-plasma Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures","The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008)","Digest of IPRM2008",,,"No. WeP39",,2008,May
"Tadashi Okumura,Takeo Maruyama,HIDENORI YONEZAWA,Nobuhiko Nishiyama,SHIGEHISA ARAI","Injection Type GaInAsP/InP/Si DFB Lasers Directly Bonded on SOI Substrate",,"The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008)",,"Vol. Versaille, France","No. TuA1-6",,2008,May
"SHIGEHISA ARAI,PDHANORM,Takeo Maruyama,Anisul Haque,Yagi Hideki,Koji Miura,Yoshifumi Nishimoto","Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures",,"Jpn. J. Appl. Phys.",,"Vol. 47","No. 5","pp. 3735-3741",2008,May
"井上敬太,プルームウォンロート･タノーム,西山伸彦,阪本真一,榎本晴基,田村茂雄,丸山武男,荒井滋久","C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上","第55回応用物理学関係連合講演会","第55回応用物理学関係連合講演会","応用物理学会","Vol. 千葉","No. 29p-ZG-15",,2008,Mar.
"プルームウォンロート・タノーム,小沢浩二,黒川宗高,田村茂雄,丸山武男,西山伸彦,荒井滋久","低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減","第55回応用物理学関係連合講演会","第55回応用物理学関係連合講演会","応用物理学会","Vol. 千葉","no. 28p-E-18",,2008,Mar.
"奥村忠嗣,丸山武男,米澤英徳,西山伸彦,荒井滋久","直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ","第55回応用物理学関係連合講演会","第55回応用物理学関係連合講演会","応用物理学会","Vol. 千葉","no. 29p-ZQ-4",,2008,Mar.
"黒川宗高,プルームウォンロート・タノーム,小沢浩二,丸山武男,西山伸彦,荒井滋久","GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復","第55回応用物理学関係連合講演会","第55回応用物理学関係連合講演会","応用物理学会","Vol. 千葉","No. 28p-P9-7",,2008,Mar.
"D. Plumwongrot,M. Kurokawa,T. Okumura,Y. Nishimoto,T. Maruyama,N. Nishiyama,S. Arai","Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths","OPTO2008 (part of SPIE Photonics West 2008)","OPTO2008 (part of SPIE Photonics West 2008)","SPIE","Vol. San Jose (USA)","No. 6909-11",,2008,Jan.
"SHIGEHISA ARAI,SAEED MAHMUD ULLAH,SeungHun Lee,PDHANORM,Munetaka Kurokawa,Shinichi Sakamoto,Hideyuki Naitoh,Tadashi Okumura,Takeo Maruyama,Nobuhiko Nishiyama","GaInAsP/InP Distributed Feedback and Distributed Reflector Lasers with Fine Wirelike Active Regions","Photonics WEST Optoelectronics 2008","OPTO2008 (part of SPIE Photonics West 2008)","SPIE","Vol. Photonics WEST Optoelectronics 2008","No. San Jose (USA)","pp. 6902-04",2008,Jan.
"D. Plumwongrot,Yousuke Tamura,Y. Nishimoto,M. Kurokawa,T. Maruyama,N. Nishiyama,S. Arai","Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process","OPTO2008 (part of SPIE Photonics West 2008)","OPTO2008 (part of SPIE Photonics West 2008)",,,"No. 6902-4",,2008,Jan.
"Tadashi Okumura,Takeo Maruyama,Masaki Kanemaru,Shinichi Sakamoto,SHIGEHISA ARAI","Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 48","pp. L1206-L1208",2007,Dec.
"T. Okumura,T. Maruyama,M. Kanemaru,S. Sakamoto,S. Arai","Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure",,"Jpn. J. Appl. Phys.",,"vol. 46","no. 48","pp. L1206-L1208",2007,Dec.
"D. Plumwongrot,Y. Tamura,T. Maruyama,N. Nishiyama,S. Arai","Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures","The 20th International Microprocesses and Nanotechnology Conference (MNC2007)","Digest of MNC2007",,,"no. 6A-4-51",,2007,Nov.
"S. Sakamoto,H. Naitoh,M. Ohtake,Y. Nishimoto,T. Maruyama,N. Nishiyama,S. Arai","85°C Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer",,"Jpn. J. Appl. Phys.",,"vol. 46","no. 47","pp. L1155-L1157",2007,Nov.
"H. Naitoh,S. Sakamoto,Mamoru Otake,T. Okumura,T. Maruyama,N. Nishiyama,S. Arai","GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure",,"Jpn. J. Appl. Phys.",,"vol. 46","no. 47","pp. L1158-L1160",2007,Nov.
"D. Plumwongrot,Y. Nishimoto,S. M. Ullah,Y. Tamura,M. Kurokawa,T. Maruyama,N. Nishiyama,S. Arai","Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions",,"Jpn. J. Appl. Phys.",,"vol. 46","no. 45","pp. L1090-L1092",2007,Nov.
"D. Plumwongrot,M. Kurokawa,T. Okumura,Y. Nishimoto,T. Maruyama,N. Nishiyama,S. Arai","Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths","The 34th International Symposium on Compound Semiconductors (ISCS2007)","The 34th International Symposium on Compound Semiconductors (ISCS2007)",,,"no. ThC-P9",,2007,Sept.
"Dhanorm Plumwongrot,田村洋介,西本頼史,黒川宗高,丸山武男,西山伸彦,荒井滋久","Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会","応用物理学会","Vol. 札幌","no. 7a-N-11","p. 1421",2007,Sept.
"奥村忠嗣,丸山武男,金丸正樹,荒井滋久","直接貼付法によるSOI基板上GaInAsP/InP-LED","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,"Vol. 札幌","no. 7a-C-13","p. 1160",2007,Sept.
"黒川宗高,Dhanorm Plumwongrot,西本頼史,丸山武男,西山伸彦,荒井滋久","2段階OMVPE成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会","応用物理学会","Vol. 札幌","no. 7p-C-6","p. 1162",2007,Sept.
"丸山武男,奥村忠嗣,荒井滋久","シリコン上レーザ実現への展望","電子情報通信学会エレクトロニクスソサィエティ大会","電子情報通信学会エレクトロニクスソサィエティ大会","電子情報通信学会","Vol. 鳥取","no. CK-1-8","pp. SS14-SS15",2007,Sept.
"S. Sakamoto,Y. Nishimoto,S. Tamura,T. Maruyama,N. Nishiyama,S. Arai","Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating",,"IEEE J. Select. Top. in Quantum Electron.","IEEE","vol. 13","no. 5","pp. 1135-1141",2007,Sept.
"Takeo Maruyama,Tadashi Okumura,Masaki Kanemaru,Shinichi Sakamoto,shigeo tamura,SHIGEHISA ARAI","Thermal characteristics of GaInAsP/InP membrane DFB lasers on SOI substrate integrated with rib-waveguide",,"The 12th Opto-Electronics and Communications Conference",,"  12D1-3",,,2007,July
"T. Maruyama,T. Okumura,M. Kanemaru,S. Sakamoto,S. Tamura,S. Arai","GaInAsP/InP Membrane DFB Lasers Directly Boded on SOI Substrate with Rib-waveguide Structure","12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007)","12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007)",,"Vol. Yokohama (Japan)","no. 12D1-3","pp. 390-391",2007,July
"内藤秀幸,阪本真一,大竹守,奥村忠嗣,丸山武男,西山伸彦,荒井滋久","エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ","電子情報通信学会レーザ・量子エレクトロニクス研究会","電子情報通信学会レーザ・量子エレクトロニクス研究会","電子情報通信学会","Vol. 東京","no. LQE2007-21","pp. 19-22",2007,June
"Tadashi Okumura,Takeo Maruyama,Masaki Kanemaru,Shinichi Sakamoto,shigeo tamura,SHIGEHISA ARAI","Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration",,"The 19th Indium Phosphide and Related Material",,"  TuB2-2",,,2007,May
"Hideyuki Naitoh,Shinichi Sakamoto,Mamoru Otake,Tadashi Okumura,Takeo Maruyama,Nobuhiko Nishiyama,SHIGEHISA ARAI","80 ?C CW Operation of GaInAsP/InP Membrane BH-DFB Laser With Air-Bridge Structure",,"The 19th Indium Phosphide and Related Material (IPRM 2007)",,"Vol. Matsue (Japan)","No. ThB1-2",,2007,May
"内藤秀幸,阪本真一,大竹守,奥村忠嗣,丸山武男,西山伸彦,荒井滋久","エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ","第54回応用物理学関係連合講演会","第54回応用物理学関係連合講演会",,"Vol. 神奈川","No. 28p-SG-11","p. 1225",2007,Mar.
"S. Sakamoto,H. Kawashima,H. Naitoh,S. Tamura,T. Maruyama,S. Arai","Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers with Polymer Cladding Layers",,"IEEE Photonics Technology Letters",,"Vol. 19","No. 5","pp. 291-293",2007,Mar.
"プルームウォンロート・タノーム,田村洋介,西本頼史,黒川宗高,丸山武男,荒井滋久","Plasma Induced Material Composition Alteration in GaInAsP/InP Quantum-Well Structure","第54回応用物理学関係連合講演会","第54回応用物理学関係連合講演会","応用物理学会","Vol. 神奈川","no. 27a-SM-9","p. 1483",2007,Mar.
"丸山武男,奥村忠嗣,金丸正樹,阪本真一,荒井滋久","導波路集積型SOI基板上GaInAsP/InP薄膜DFBレーザ",,"第54回応用物理学関係連合講演会",,"Vol. 神奈川","No. 28a-SG-11",,2007,Mar.
"Y. Nishimoto,K. Miura,H. Yagi,D. Plumwongrot,K. Ohira,T. Maruyama,S. Arai","Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes",,"Jpn. J. Appl. Phys.",,"vol. 46","no. 2","pp. L34-L36",2007,Feb.
"Y. Nishimoto,K. Miura,H. Yagi,D. Plumwongrot,K. Ohira,T. Maruyama,S. Arai","Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes",,"Japanese Journal of Applied Physics",,"Vol. 46","No. 2","pp. L34-L36",2007,Feb.
"S. Sakamoto,H. Naitoh,H. Kawashima,M. Ohtake,S. Tamura,T. Maruyama,N. Nishiyama,S. Arai","85℃ continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene","10th International Symposium on Contemporary Photonics Technology (CPT 2007)","10th International Symposium on Contemporary Photonics Technology (CPT 2007)",,"Vol. Tokyo (Japan)","no. G-6",,2007,Jan.
"丸山武男,奥村忠嗣,金丸正樹,阪本真一,荒井滋久","SOI基板上導波路集積型BH-DFB半導体薄膜レーザ",,"電子情報通信学会シリコンフォトニクス研究会",,"Vol. 東京","No. SiPH2006-11","pp. 49-52",2007,Jan.
"奥村忠嗣,丸山武男,阪本真一,西本頼史,荒井滋久","直接貼り付け法によるSOI基板上GaInAsP/InP半導体薄膜レーザ",,"電子情報通信学会レーザ・量子エレクトロニクス研究会",,"Vol. 東京","No. LQE2006-104","pp. 7-12",2006,Dec.
"T. Maruyama,T. Okumura,S. Arai","Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate",,"Japanese Journal of Applied Physics",,"Vol. 45","No. 11","pp. 8717-8718",2006,Nov.
"Takeo Maruyama,Tadashi Okumura,SHIGEHISA ARAI","Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate",,"Jpn. J. Appl. Phys",,"Vol. 45","No. 11","pp. L8717-L8718",2006,Nov.
"Takeo Maruyama,Tadashi Okumura,Shinichi Sakamoto,Koji Miura,Yoshifumi Nishimoto,SHIGEHISA ARAI","GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate",,"Opt. Express",,"Vol. 16","No. 14","pp. 8814-8818",2006,Sept.
"T. Maruyama,T. Okumura,S. Sakamoto,K. Miura,Y. Nishimoto,S. Arai","GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate",,"Optics Express",,"Vol. 14","No. 18","pp. 8184-8188",2006,Sept.
"丸山武男,奥村忠嗣,阪本真一,荒井滋久","直接貼付法によるSOI基板上GaInAsP/InP薄膜DFBレーザ",,"第67回応用物理学会学術講演会",,"Vol. 滋賀","No. 29a-ZT-15","p. Digest III-p. 1049",2006,Aug.
"Takeo Maruyama,Tadashi Okumura,Shinichi Sakamoto,Koji Miura,Yoshifumi Nishimoto,SHIGEHISA ARAI","GaInAsP/InP long-wavelength membrane BH-DFB lasers directly bonded on SOI Substrate",,"The 11th Opto-Electronics and Communications Conferen",,"Vol. Kaohsiung (Taiwan)","No. 5E1-3",,2006,July
"Takeo Maruyama,Tadashi Okumura,Shinichi Sakamoto,Koji Miura,Yoshifumi Nishimoto,SHIGEHISA ARAI","Direct bonding of GaInAsP/InP membrane structure on SOI wafer","The 18th Indium Phosphide and Related Materials Conference (IPRM2006)","The 18th Indium Phosphide and Related Materials Conference",,"Vol. WP-2",,,2006,May
"丸山武男,奥村忠嗣,荒井滋久","SOI 基板上へのGaInAsP/InP 薄膜直接貼り付け",,"第53回応用物理学関係連合講演会",,"Vol. 東京","No. 24a-B-6",,2006,Mar.
"H. Yagi,K. Miura,Y. Nishimoto,D. Plumwongrot,K. Ohira,T. Maruyama,S. Arai","Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions",,"Japanese Journal of Applied Physics",,"Vol. 87","No. 22","pp. 223120-1-223120-3",2005,Nov.
"H. Yagi,T. Sano,K. Ohira,D. Plumwongrot,T. Maruyama,A. Haque,S. Tamura,S. Arai","GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes",,"Japanese Journal of Applied Physics",,"Vol. 43","No. 6A","pp. 3401-3409",2004,June
"新山勇樹,横山毅,村田奉之,丸山武男,渡辺正裕","BeMgZnSe 系紫外線量子井戸レーザの理論解析 ? クラッド層Mg 含有量依存性 ?","第64回応用物理学会学術講演会",,,"  30p-B-13","  1","  251",2003,Aug.
"新山勇樹,丸山武男,渡辺正裕","GaP(001)基板上BeMgZnSe-BeZnSe DH構造における紫外線PL発光","第63回応用物理学会学術講演会",,,"  26p-YE-7","  1","  272",2002,Sept.
"T. Maruyama,N. Nakamura,M. Watanabe","Crystal Growth of BeZnSe on CaF<sub>2</sub>/Si(111) Subtrate",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 8A","pp. L876-L877",2002,Aug.
"Y. Niiyama,T. Maruyama,N. Nakamura,M. Watanabe","Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 7A","pp. L751-L753",2002,July
"Takeo Maruyama,Naoto Nakamura,Masahiro Watanabe","Crystal growth of BeZnSe on CaF2/Si(111) substrate",,"Japanese Journal of Applied Physics",,"Vol. 41",,"pp. L876-L877",2002,
"丸山武男","Study of Light Emitting Devices Using Heterostructures Lattice-Matched to Silicon",,,,,,,2002,
"中村尚人,丸山武男,新山勇樹,渡辺正裕","GaP(001)基板上へのBeMgZnSeエピタキシャル成長","第62回応用物理学会学術講演会",,,"  11a-P1-3","  1","  207",2001,Sept.
"丸山武男,中村尚人,新山勇樹,渡辺正裕","GaP(001)基板上に成長したBeZnSeからの室温紫外線PL発光","第62回応用物理学会学術講演会",,,"  11a-P1-2","  1","  207",2001,Sept.
"丸山武男,中村尚人,渡辺正裕","CaF<sub>2</sub>/Si(111)基板上へのBeZnSeエピタキシャル成長","第48回応用物理学会関係連合講演会",,,"  28p-K-13","  1","  319",2001,Mar.
"丸山武男,中村尚人,渡辺正裕","CaF<sub>2</sub>/Si(111)基板上へのBeSe成長","第61回応用物理学会学術講演会",,,"  4p-Z-8","  1","  236",2000,Sept.
"T. Maruyama,N. Nakamura,M. Watanabe","Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF<sub>2</sub> on Si(111) Substrate Prepared by Rapid Thermal Annealling",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 4B","pp. 1996-2000",2000,Apr.
"Takeo MARUYAMA,Naoto NAKAMURA,Masahiro WATANABE","Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2 on Si(111) Substrate Prepared by Rapid Thermal Annealing",,"Japanese Journal of Applied Physics",,"Vol. 39",,"pp. 1996-2000",2000,
"T. Maruyama,N. Nakamura,M. Watanabe","Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF<sub>2</sub> Epilayers on Si(111) with Rapid Thermal Anneal","The 1999 International Conference on Solid State Devices and Materials",,,"  D-11-1",,"  426-427",1999,Sept.
"中村尚人,丸山武男,渡辺正裕","CaF<sub>2</sub>/Si(111)薄膜中Si微結晶からのEL発光","第60回応用物理学会学術講演会",,,"  3p-ZN-15","  2","  768",1999,Sept.
"T. Maruyama,N. Nakamura,M. Watanabe","Visible electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF<sub>2</sub>/Si(111) with Rapid Thermal Anneal",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 8B","pp. L904-L906",1999,Aug.
"Takeo MARUYAMA,Naoto NAKAMURA,Masahiro WATANABE","Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystyalline CaF_2/Si(111) with Rapid Thermal Anneal",,"Japanese Journal of Applied Physics",,"Vol. 38",,"pp. L904-L906",1999,
"M. Watanabe,T. Maruyama,S. Ikeda","Light emission from Si nanocrystals embedded in CaF<sub>2</sub> epilayers on Si(111): effect of rapid thermal annealing",,"J. Luminescence",,"Vol. 80","No. 253","pp. 253-256",1999,
"丸山武男,中村尚人,渡辺正裕","CaF<sub>2</sub>/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルのRTA雰囲気依存性","第59回応用物理学会学術講演会",,,"  16a-ZE-8","  2","  795",1998,Sept.
"M. Watanabe,T. Maruyama,S. Ikeda","Light Emission from Nanocrystal Si Embedded in CaF<sub>2</sub> Epilayers on Si(111): Effect of Rapid Thermal Annealing","E-MRS 1998 Spring Meeting",,,"  B-II/P.10",,"  B-29",1998,June
"M. Watanabe,T. Matsunuma,T. Matsunuma,T. Maruyama,Y. Maeda","Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si",,,,"Vol. 37","No. 5B","pp. L591-L593",1998,May
"M. Watanabe,T. Matsunuma,T. Maruyama,Y. Maeda","Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF<sub>2</sub>/Si(111)",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 5B","pp. L591-L593",1998,May
"丸山武男,池田総太郎,渡辺正裕","CaF<sub>2</sub>/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルの成長条件依存性","第45回応用物理学会関係連合講演会",,,"  29a-p-8","  2","  838",1998,Mar.
"MASAHIRO WATANABE,W. Saitoh,K. Mori,H. Sugiura,T. Maruyama,M. Asada","Reduction of Electrical Resistance of Nanometer-Thick CoSi<sub>2</sub> Film on CaF<sub>2</sub> by pseudomorphic growth of CaF<sub>2</sub> on Si(111)",,"Jpn. J. Appl. Phys.",,"Vol. 36","No. 7A","pp. 4470-4471",1997,July
"M. Watanabe,T. Matsunuma,T. Maruyama,M. Asada","Electroluminescence from silicon nanoparticles embedded in CaF<sub>2</sub> on Si(111)","Phantoms Strategic Domain Meetings (PHASDOM97)",,,"  D2.23c",,,1997,Mar.
"Masahiro WATANABE,Takeshi MATSUNUMA,Takeo MARUYAMA,Masahiro ASADA","Visible light emission from nanocrystalline silicon embedded in CaF<sub>2</sub> layers on Si(111)","3rd International Symposium on Quantum Effect Electronics",,,,"  11","p. 48",1996,Nov.
"M. Watanabe,T. Matsunuma,T. Maruyama,M. Asada","Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF<sub>2</sub> on Si(111)","Second International Symposium on Control of Semiconductor Interfaces",,,"  A3-6",,,1996,Oct.
"MASAHIRO WATANABE,Y. Miyamoto, K,T. Maruyama,M. Asada","Detection of hot electron current with scanning hot electron microscopy",,"Appl. Phys. Lett",,"Vol. 69","No. 15","pp. 2196-2198",1996,Oct.
"齋藤渉,森郁,杉浦秀和,丸山武男,渡辺正裕,浅田雅洋","CaF<sub>2</sub>上極薄膜CoSi<sub>2</sub>電気抵抗のCaF<sub>2</sub>結晶依存性","第57回応用物理学会学術講演会",,,"  8p-ZE17","  1","  200",1996,Sept.
"松沼健司,丸山武男,渡辺正裕,浅田雅弘","CaF<sub>2</sub>ナノクリスタルシリコンからのEL発光スペクトル","第57回応用物理学会学術講演会",,,"  8p-V15","  2","  679",1996,Sept.
"F. Vazquez,D. Kobayashi,I. Kobayashi,K. Furuya,Y. Miyamoto,T. Maruyama,M. Watanabe,M. Asada","Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM)","the 1996 International Conference on Solid State Devices and Materials",,,"  Sympo. IV-7",,"  187-189",1996,Aug.
"松沼健司,丸山武男,渡辺正裕,浅田雅洋","CaF<sub>2</sub>ナノクリスタルシリコンからのEL発光の成長条件依存性","第43回応用物理学会関係連合講演会",,,"  26aZF5","  1","  214",1996,Mar.