"Y.Tabuchi,K. Aizawa,T. Tamura,K. Takahashi,H. Hoko,K. Kato,Y. Arimoto,H. Ishiwara","Characterization of (Bi,Nd)4Ti3O12/HfO2/p-Type Si Structures for MFIS-FeRAM Application",,"Integrated Ferroelectrics",,"Vol. 79",,"pp. 211-218",2006,
"Koji Aizawa,Byung-Eun Park,Yoshihito Kawashima,Kazuhiro Takahashi,Hiroshi Ishiwara","Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors",,"Appl. Phys. Lett.",,"Vol. 85","No. 15","pp. 3199-3201",2004,
"Koji AIZAWA,Sota KOBAYASHI,Hiroshi ISHIWARA,Kazuyuki SUZUKI,Kazumi KATO","Ferroelectric-gate field effect transistors using (Y,Yb)MnO3/Y2O3/Si(111) structures for 1T-type FeRAMs",,"The 16^th^ International Symposium on Integrated Ferroelectrics (ISIF2004), Gyeongju",,,"No. 11-10-C",,2004,
"T. Takahashi,B-E Park,K. Aizawa,H. Ishiwara","30-day-long data retention in ferroelectric-gate FET's with HfO2 buffer layers",,"Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials",,,"No. D-1-2","pp. 52-53",2004,
"Koji Aizawa,Byung-Eun Park,Yoshihito Kawashima,Kazuhiro Takahashi,Hiroshi Ishiwara","Effect of ferroelectric/HfO2/Si structures on electrical properties of ferroelectric-gate FETs",,"Abstracts of 2004 Mat. Res. Soc. Fall Meeting (Sympo. D ; Materials and Processes for Nonvolatile Memories), Boston",,,"No. D2.9","pp. 84",2004,
"Koji AIZAWA,Hiroshi ISHIWARA","Low Voltage Operation of Ferroelectric Capacitors using Sr-deficient and Praseodymium-substituted Strontium Bismuth Tantalate Ultra Thin Films",,"Integrated Ferroelectrics",,"Vol. 62",,"pp. 211-214",2004,
"會澤康治,川島良仁,高橋憲弘,朴炳垠,石原宏","SBT/HfO2構造を用いたMFIS DiodeおよびFETの作製と評価",,"第51回応用物理学関係連合講演会講演予稿集",,"Vol. 第二分冊","No. 30p-ZL-19","pp. 620",2004,
"高橋憲弘,朴炳垠,川島良仁,田渕良志明,會澤康治,石原宏","(Bi,La)4Ti3O12/HfO2構造を用いたMFISダイオード及び1T型FETの電気的特性評価",,"第51回応用物理学関係連合講演会講演予稿集",,"Vol. 第二分冊","No. 30p-ZL-18","pp. 619",2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの作製とデーター保持特性の評価",,"第51回応用物理学関係連合講演会講演予稿集",,"Vol. 第二分冊","No. 31p-ZL-1","pp. 621",2004,
"會澤康治,高橋憲弘,田村哲朗,有本由弘,石原宏","CVD HfO2薄膜をバッファ層に用いたSBT/HfO2/p-Si構造の作製と評価",,"第65回応用物理学会学術講演会講演予稿集",,"Vol. 第二分冊","No. 4a-Y-8","pp. 496",2004,
"高橋憲弘,會澤康治,田村哲朗,有本由弘,石原宏","(Bi,La)4Ti3O12/CVD HfO2構造を用いたMFISダイオードの電気的特性評価",,"第65回応用物理学会学術講演会講演予稿集",,"Vol. 第二分冊","No. 4a-Y-10","pp. 497",2004,
"田渕良志明,朴炳垠,會澤康治,川島良仁,高橋憲弘,田村哲朗,鉾宏真,加藤一実,有本由弘,石原宏","(Bi,Nd)4Ti3O12/HfO2/Si(100)構造MFIS型強誘電体メモリの特性評価",,"第65回応用物理学会学術講演会講演予稿集",,"Vol. 第二分冊","No. 4a-Y-9","pp. 496",2004,
"Koji AIZAWA,Hiroshi ISHIWARA","Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1V",,"Jpn. J. Appl. Phys.",,"Vol. 42","No. 7B","pp. L840",2003,
"Koji AIZAWA,Hiroshi ISHIWARA","Evaluation of ferroelectric/silicon interface state density in ferroelectric-gate transistors using a charge pumping method",,"Ferroelectrics",,"Vol. 293",,"pp. 119",2003,
"會澤康治,石原宏","Pr-SrBi2Ta2O9薄膜の作製と電気的特性評価",,"第50回応用物理学関係連合講演会講演予稿集",,"Vol. 二分冊","No. 27p-Q-10","pp. 576",2003,
"會澤康治,石原宏","Bi過剰前駆体溶液を用いたゾルゲルSBT極薄膜の形成と分極特性",,"第64回応用物理学会学術講演会講演予稿集",,"Vol. 二分冊","No. 30a-V-6","pp. 478",2003,
"會澤康治,小林宗太,石原宏","SBT系強誘電体／Al2O3/Si構造MFISダイオードの電気的特性評価",,"2002年秋季 第63回応用物理学会学術講演会",,"Vol. 2分冊","No. 24p-P4-6","pp. 444",2002,
"會澤康治,石原宏","Ferroelectric BaMgF4 Thin Films on Si Substrates : Characterization and Application to Memory Devices",,"2002年秋季 第63回応用物理学会学術講演会",,"Vol. 0分冊","No. 26a-ZE-5","pp. 60",2002,
"Koji AIZAWA,Hiroshi ISHIWARA","Memory effect in ferroelectric-gate field effect transistors using 0.1μm-thick silicon-on-insulator substrates",,"Ferroelectrics",,"Vol. 271",,"pp. 173",2002,
"會澤康治,川島良仁,石原宏","Charge pumping法による強誘電体／Si構造の界面準位密度評価",,"2002年春季 第49回応用物理学関係連合講演会",,"Vol. 2分冊","No. 30a-ZA-8","pp. 540",2002,
"會澤康治,石原宏","薄膜SOI基板上に作製した強誘電体ゲートFETの評価",,"第48回応用物理学関係連合講演会 講演予稿集",,"Vol. 2","No. 28p-ZX-3","pp. 539",2001,
"會澤康治,川島良仁,木島健,石原宏","新規強誘電体材料を用いた強誘電体ゲートFET",,"第62回応用物理学会学術講演会 講演予稿集",,"Vol. 2","No. 11p-T-4","pp. 379",2001,
"Koji Aizawa,Hiroshi ISHIWARA","Ferroelectric BaMgF4 Thin Films on Si Substrates: Growth, Characterization and Application to Memory Devices",,"Japanese Research Review for Pioneering, Ternary and Multinary Compounds in the 21st Century","Japanese Research Review for Pioneering, Ternary and Multinary Compounds in the 21st Century","Vol. IPAP BOOK 1",,"pp. 168",2001,
"Eisuke Tokumitsu,Koji Aizawa,Kojiro Okamoto,Hiroshi Ishiwara","Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films",,"Appl. Phys. Lett.",,"Vol. 76","No. 18","pp. 2609-2611",2000,Mar.
"Koji AIZAWA,Hiroshi ISHIWARA","Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films",,"Japanese Journal of Applied Physics",,"Vol. 39","No. 11B","pp. L1191-L1193",2000,
"會澤康治,岡本浩次郎,徳光永輔,石原宏","face-to-face annealing法によるゾルゲルSBT薄膜の形成と評価",,"第47回応用物理学関係連合講演会講演予稿集",,"Vol. 2","No. 30aP11-7","pp. 527",2000,
"會澤康治,石原宏","face-to-face annealing法によるゾルゲルSBT薄膜のTEM観察",,"第61回応用物理学会学術講演会講演予稿集",,"Vol. 2","No. 7pG-5","pp. 458",2000,
"Koji AIZAWA,Eisuke TOKUMITSU,Kojiro OKAMOTO,Hiroshi ISHIWARA","Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films",,"Applied Physics Letters",,"Vol. 76","No. 18","pp. 2609-2611",2000,
"會澤康治,岡本浩次郎,天野敦弘,徳光永輔,石原宏","強誘電体ゲートFETのパルスdisturb特性(II)",,"第60回応用物理学会学術講演会講演予稿集",,"Vol. 2","No. 3pA-13","pp. 458",1999,
"會澤康治,西山 淳,徳光永輔,石原 宏","強誘電体ゲートFETのパルスdisturb特性",,"第46回応用物理学関係連合講演会講演予稿集",,"Vol. 2","No. 31pK-6","pp. 600",1999,
"Koji AIZAWA,Hiroshi ISHIWARA","Fabrication and characterization of MFSFET arrays using Al/BaMgF4/Si(111) structures",,"Integrated Ferroelectrics",,"Vol. 27",,"pp. 1-8",1999,
"Koji AIZAWA,Eisuke TOKUMITSU,Shigenori OHTAKE,Hiroshi ISHIWARA","C-V Characteristics of Al/BaMgF4/Si(111) Diodes Fabricated by Dry Etching Process",,"Journal of the Korean Physical Society",,"Vol. 32",,"pp. S1192-S1194",1998,Feb.
"會澤康治","半導体基板上への常誘電性および強誘電性弗化物薄膜の形成とデバイス応用に関する研究",,,,,,,1996,Feb.