"Byung-Eun Park,Hiroshi Ishiwara","Formation of (Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> films on Si(100) substratres using LaAlO<sub>3</sub> buffer layers",,"Ferroelectrics (to be published)",,,,,2002,
"Byung-Eun Park,Hiroshi Ishiwara","Fabrication of MFIS Diodes Using BLT(Bi,La)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> and LaAlO<sub>3</sub> Buffer Layers",,"Ext. Abst. of 13th IEEE International Symposium on the Applications of Ferroelectrics (to be published)",,,,,2002,
"Byung-Eun PARK,Hiroshi ISHIWARA","Electrical properties of LaAlO<sub>3</sub>/Si and Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub>/LaAlO<sub>3</sub>/Si structures",,"Appl. Phys. Lett.",,"Vol. 79","No. 6","pp. 806",2001,
"Byung-Eun Park,Hiroshi Ishiwara","Fabrication of MFIS Diodes Using Sol-Gel Derived SBT Films and LaAlO<sub>3</sub> Buffer Layers",,"Integrated Ferroelectrics",,"Vol. 40",,"  201-209",2001,
"Byung-Eun PARK,Hiroshi ISHIWARA","Fabrication of PZT Films on Si Substrates by Sol-Gel Method Using Y<sub>2</sub>O<sub>3</sub> Buffer Layers",,"Integrated Ferroelectrics",,"Vol. 33","No. 1-4","pp. 1161",2001,
"–pàzšµ","Fabrication of PbZr<sub>x</sub>Ti<sub>1-x</sub>O<sub>3</sub>(PZT) films on Si substrates and their device application",,,,,,,1999,
"Byung-Eun PARK,Shogo IMADA,Eisuke TOKUMITSU,Hiroshi ISHIWARA","Annealing Effect of the CeO2 Buffer Layers for PZT/CeO2 /Si(111) Structures",,"Journal of the Korean Physical Society",,"Vol. 32",,"pp. S1390-S1392",1998,Feb.