"Eisuke TOKUMITSU,Gen FUJII,Hiroshi ISHIWARA","Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Film and SrTa<sub>2</sub>O<sub>6</sub>/SiON Buffer Layer",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 4B","pp. 2125-2130",2000,Apr.
"E.Tokumitsu,Gen Fujii,Hiroshi Ishiwara","Nonvolatile ferroelectric-gate FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/SrTa<sub>2</sub>O<sub>6</sub>/SiON/Si structures",,"Appl. Phys. Lett.",,"Vol. 75","No. 4","pp. 575-577",1999,July