"田中雅明,Pham Nam Hai,中根了昌,大矢忍,吉田博","強磁性量子ヘテロ構造による物性機能の創出と不揮発・低消費電力スピンデバイスへの応用","CREST研究領域第5回領域会議「量子状態の高度な制御に基づく革新的量子技術基盤の創成」",,,,,,2020,Dec.
"R. Nakane,Y. Shuto,H. Sukegawa,Z.C. Wen,S. Yamamoto,S. Mitani,M. Tanaka,K. Inomata,S. Sugahara","Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip",,"Solid-State Electronics","Elsevier","Vol. 102",,"pp. 52-58",2014,Dec.
"Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai,Ryosyo Nakane","(Invited) Spintronics materials and devices - ferromagnetic semiconductors and hetero structures","2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)",,,,,,2012,Dec.
"Y. Takamura,K. Hayashi,Y. Shuto,R. Nakane,S. Sugahara","Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors",,"J. Electron. Mater.","Springer","vol. 41","no. 5","pp. 954-958",2012,Apr.
"Masaaki Tanaka,Shinobu Ohya,Ryosyo Nakane,Pham Nam Hai,Shinsuke Yada,Ryota Akiyama,Yoshisuke Ban,Shoichi Sato,Iriya Muneta,Ryohei Okazaki,Le Duc Anh","Spintronics: Materials and Devices: A New Spin on Semiconductors - Spintronics Research Opens the Way to New Semiconductor Technology","International Symposium on Secure-Life Electronics",,,,,,2012,Jan.
"Y. Takamura,T. Sakurai,R. Nakane,Y. Shuto,S. Sugahara","Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing",,"J. Appl. Phys.","American Institute of Physics","Vol. 109","no. 7","pp. 07B768/1-3",2011,Apr.
"Y. Takamura,T. Sakurai,R. Nakane,Y. Shuto,S. Sugahara","Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing","55th Annual Conference on Magnetism and Magnetic Materials (MMM2010)",,,"  paper CV-02",,"  p. 114 (program)",2010,Nov.
"櫻井 卓也,高村 陽太,中根 了昌,周藤 悠介,菅原 聡","RTAによるフルホイスラー合金Co2FeGe薄膜のエピタキシャル形成","第71回応用物理学会学術講演会",,,"  paper 14p-F-7","  p.73","  10-018(DVD)",2010,Sept.
"Y. Shuto,R. Nakane,W. H. Wang,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET","The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors",,,,,,2010,Aug.
"Y. Takamura,R. Nakane,S. Sugahara","Disordered structures in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing","The 6th International Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)",,,,,"  paper P2-21",2010,Aug.
"T. Sakurai,Y. Takamura,R. Nakane,Y. Shuto,S. Sugahara","Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing","The 6th International Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)",,,,,"  paper P2-22",2010,Aug.
"Y. Takamura,R. Nakane,S. Sugahara","Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources",,"J. Appl. Phys.","American Institute of Physics","Vol. 107",,"pp. 09B111/1-3",2010,Apr.
"K. Hayashi,Y. Takamura,R. Nakane,S. Sugahara","Formation of Co2FeSi/SiOxNy/Si tunnel junctions for Si-based spin transistors",,"J. Appl. Phys.","American Institute of Physics.","Vol. 107",,"pp. 09B104/1-3",2010,Apr.
"周藤悠介,中根了昌,Wenhong Wang,介川裕章,山本修一郎,田中雅明,猪俣浩一郎,菅原 聡","擬似スピンMOSFETの作製と評価","2010年春季 第57回応用物理学関係連合講演会",,,,,,2010,Mar.
"林建吾,高村陽太,中根了昌,菅原聡","Co2FeSi/SiOxNy/Siトンネル接合の形成とその構造評価","第57回応用物理学関係連合講演会",,,"  17a-ZH-5",,,2010,Mar.
"田中 雅明,大矢 忍,中根 了昌,ファム ナム ハイ,矢田 慎介,秋山 了太,國谷 瞬,佐藤 彰一,宗田 伊理也","スピン偏極電流制御デバイスと材料物性の研究","特定領域研究「スピン流の創出と制御」平成21年度成果報告会",,,,,,2010,Jan.
"Y. Shuto,R. Nakane,W. H. Wang,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET",,"Appl. Phys. Exp.",,"vol. 3","no. 1","pp. 013003/1-3",2010,
"Y. Shuto,R. Nakane,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","Fabrication and characterization of pseudo-spin-MOSFETs","Intl. Conf. Silicon Nano Devices in 2030",,,,"  paper P-49","pp. 148-149",2009,Oct.
"K. Hayashi,Y. Takamura,R. Nakane,S. Sugahara","Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films","IEEE International Magnetics Conference (INTERMAG 09)",,,,,"  paper ES-08",2009,May
"Y. Takamura,R. Nakane,S. Sugahara","Analysis of L2<sub>1</sub>-ordering in full-Heusler Co<sub>2</sub>FeSi alloy thin films formed by rapid thermal annealing",,"J. Appl. Phys.","American Institute of Physics","vol. 105","no. 7","pp. 07B109/1-3.",2009,Apr.
"林建吾,高村陽太,中根了昌,菅原聡","極薄絶縁膜上へのフルホイスラー合金Co2FeSiの形成とその評価","第56回応用物理学関連連合講演会",,,"  1a-Q-5",,,2009,Mar.
"高村陽太,中根了昌,周藤悠介,菅原聡","不純物偏析技術を用いたCo2FeSiソース/ドレインMOSFETの作製と評価","第56回応用物理学関連連合講演会",,,"  1p-TB-9",,,2009,Mar.
"林建吾,高村陽太,中根了昌,菅原聡","非晶質絶縁膜上へのフルホイスラー合金Co2FeSiの形成と評価","第13回半導体スピン工学の基礎と応用 (PASPS-13)",,,"  B-3",,"p. 9",2009,Jan.
"田中 雅明,中根 了昌,大矢 忍,A. M. ナズムル,ファム ナム ハイ,矢田 慎介,遠藤 裕幸","スピン偏極電流制御デバイスと材料物性の研究","特定領域研究「スピン流の創出と制御」平成20年度成果報告会",,,,,,2009,Jan.
"Y. Takamura,R. Nakane,S. Sugahara","Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing",,"53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)",,"  DD-03",,"pp. 230-231",2008,Nov.
"Y.  Takamura,A. Nishijima,Y. Nagahama,R. Nakane,S. Sugahara","Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors",,"ECS Trans.","The Electrochemical Society","vol. 16","no. 10","pp. 945-952",2008,Oct.
"Y. Takamura,Y. Nagahama,A. Nishijima,R. Nakane,S. Sugahara","Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors",,"Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)",,,"  session E15-E23","  paper 2480",2008,Oct.
"菅原 聡,高村 陽太,中根 了昌,周藤悠介,山本 修一郎","スピンMOSFET を用いたスピントランジスタ・エレクトロニクス","第69回応用物理学会学術講演会",,,,,"  paper 3p-E-3",2008,Sept.
"?村陽太,中根了昌,菅原聡","RTAによって作製したフルホイスラー合金Co<sub>2</sub>FeSiの規則度","第69回応用物理学会学術講演会",,,,,"  paper 2a-ZR-6",2008,Sept.
"中根了昌,原田智之,杉浦邦晃,菅原聡,田中雅明","シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用","第69回応用物理学会学術講演会",,,,,"  paper 3p-CA-3",2008,Sept.
"林健吾,高村陽太,中根了昌,菅原聡","非晶質絶縁膜上に形成したフルホイスラー合金Co2FeSiの結晶構造評価","第69回応用物理学会学術講演会",,,,,"pp. 2a-ZR-7",2008,Sept.
"ファム ナム ハイ,大矢忍,中根了昌,A.M. ナズムル,矢田慎介,原田智之,遠藤裕幸,田中雅明","スピン偏極電流制御デバイスとその材料物性の研究：閃亜鉛鉱型MnAs微粒子を含む半導体ナノ構造における巨大な磁気抵抗効果とスピン起電力","第２回特定領域研究「スピン流」成果報告会",,,,,,2008,July
"Y. Takamura,A. Nishijima,Y. Nagahama,R. Nakane,S. Sugahara","Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs","The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)","The 4th Intl. Nanotechnology Conf. on Communication and Cooperation (INC4)",,,,"  paper P-19",2008,Apr.
"Y. Takamura,R. Nakane,H. Munekata,S. Sugahara","Characterization of Half-Metallic L2<sub>1</sub>-Phase Co<sub>2</sub>FeSi Full-Heusler Alloy Thin Films Formed by Rapid Thermal Annealing",,"J. Appl. Phys.","American Institute of Physics","vol. 103","no. 7","pp. 07D719/1-3",2008,Apr.
"森井清仁,Sanjeewa Dissanayake,田辺聡,中根了昌,竹中充,菅原聡,高木信一","メタルソース・ドレインnチャネルGOI MOSFETのチャネル電子移動度測定","第55回応用物理学関係連合講演会",,,,,"  paper 29a-P11-15",2008,Mar.
"田辺聡,中北要佑,原田智之,Sanjeewa Dissanayake,中根了昌,竹中充,菅原聡,高木信一","GOI pMOSFETの正孔反転層における移動度の評価","第55回応用物理学関係連合講演会",,,,,"  paper 28p-ZR-9",2008,Mar.
"高村陽太,長浜陽平,西島輝,中根了昌,宗片比呂夫,菅原聡","RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造","第55回応用物理学会関連連合講演会",,,"  28a-F-4",,,2008,Mar.
"S. Takagi,T. Irisawa,T. Tezuka,T. Numata,S. Nakaharai,N. Hirashita,Y. Moriyama,K. Usuda,E. Toyoda,S. Dissanayake,M. Shichijo,R. Nakane,S. Sugahara,M. Takenaka,N. Sugiyama","Carrier-transport-enhanced channel CMOS for improved power consumption and performance",,"IEEE Trans. Electron Devices",,"Vol. 55","No. 1","pp. 21-39",2008,Jan.
"高村陽太,西島輝,長浜陽平,中根了昌,宗片比呂夫,菅原聡","Rapid Thermal Annealingを用いたフルホイスラー合金の作製と評価","第12回半導体スピン工学の基礎と応用 (PASPS-12)",,,,,"  P6",2007,Dec.
"S. Takagi,H. Matsubara,M. Nishikawa,T. Sasada,R. Nakane,S. Sugahara,M. Takenaka","Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation","The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)","The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)",,,,"pp. 65-66, paper OA2-1",2007,Nov.
"Y. Takamura,R. Nakane,H. Munekata,S. Sugahara","Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing","52nd Annual Conference on Magnetism and Magnetic Materials (MMM2007)",,,,,"p. 116 paper BQ-05",2007,Nov.
"S. Takagi,T. Uehara,S. Tanabe,H. Matsubara,R. Nakane,M. Takenaka,S. Sugahara","Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs","4th International Symposium on Compound Semiconductors (ISCS2007)","34th International Symposium on Compound Semiconductors (ISCS2007)",,,,"p. 132",2007,Oct.
"中根了昌,田中雅明,菅原聡","Siキャップ層による強磁性Fe3Si薄膜形成温度の低温化","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,,,"p. 5a-S-9",2007,Sept.
"高村陽太,長浜陽平,中根了昌,宗片比呂夫,菅原聡","RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,"  5a-S-1",,,2007,Sept.
"星井拓也,出浦桃子,杉山正和,中根了昌,菅原聡,竹中充,中野義昭,高木信一","微小孔を介したSi 基板上InGaAs 成長におけるモフォロジー向上","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,,,"p. 7p-E-13",2007,Sept.
"M. Shichijo,R. Nakane,S. Sugahara,S. Takagi","Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 9A,","pp. 5930?5934",2007,Sept.
"高村陽太,西島輝,中根了昌,宗片比呂夫,菅原聡","Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価","第68回応用物理学会学術講演会","第68回応用物理学会学術講演会",,,,"p. 5a-S-2",2007,Sept.
"高村陽太,中根了昌,宗片比呂夫,菅原聡","Silicon-on-insulator (SOI) 基板を用いたホイスラー合金の作製とその磁性評価","第54回応用物理学関係連合講演会","第54回応用物理学関係連合講演会",,,,"p. 28a-ZT-9",2007,Mar.
"田中 雅明,周藤 悠介,矢田 慎介,杉浦 邦晃,ファム ナム ハイ,横山 正史,大矢 忍,中根 了昌,菅原 聡","半導体スピントロニクス・ヘテロ構造電子デバイスの研究","文部科学省科学研究費補助金特定領域研究「半導体ナノスピントロニクス」平成17年度成果報告会",,,,,,2006,Jan.