"T. Nakayama,Kuniyuki KAKUSHIMA,O. Nakatsuka,Y. Machida,S. Sotome,T. Matsuki,Kenji Ohmori,HIROSHI IWAI,S. Zaima,’m‹ž–L—T,Kenji Shiraishi,Keisaku Yamada","Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature","2010 IEDM",,,,,,2010,Dec.
"Miyuki Kouda,Naoto Umezawa,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Ahmet Parhat,Kenji Shiraishi,’m‹ž–L—T,Keisaku Yamada,HIROSHI IWAI","Charged defects reduction in gate insulator with multivalent materials","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Takahiro Nagata,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,’m‹ž–L—T,HIROSHI IWAI","On the thermal stability of nicket silicides","Future Trends in Microelectronics(FTM-2009) Workshop",,,,,,2009,June
"Naoto Umezawa,Kenji Shiraishi,Kuniyuki KAKUSHIMA,Kenji Ohmori,Keisaku Yamada,’m‹ž–L—T,HIROSHI IWAI","Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning","ECS 213th Meeting",,,,,,2008,May
"ƒp�[ƒ‹ƒnƒbƒg ƒAƒwƒ�ƒg,“›ˆäˆê�¶,Šp“ˆ–M”V,�™ˆä �M”V,’m‹ž –L—T,•ž•”Œ’—Y,’·“c ‹M�O,Šâˆä—m","�‚”Z“xn+-Si ‹y‚Ñp+-SiŠî”Â�ã‚ÌNiƒVƒŠƒTƒCƒh‚Ì”MˆÀ’è�«‚̈Ⴂ","�t‹G‘æ55‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï","�t‹G‘æ55‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï—\�e�W",,,"No. 0","pp. 896",2008,Mar.
"Kentaro Doi,Yutaka Mikazuki,Shinya Sugino,Tatsuki Doi,Pawel Szarek,Masato Senami,Kenji Shiraishi,HIROSHI IWAI,Naoto Umezawa,’m‹ž–L—T,Keisaku Yamada,Akitomo Tachibana","Electronic structure study of local dielectric properties of lanthanoid oxide, clusters",,"JAPANESE JOURNAL OF APPLIED PHYSICS",,"Vol. 47",,"pp. 205-211",2008,Jan.