"H Wong,B.L. Yang,S. Dong,HIROSHI IWAI,Kuniyuki KAKUSHIMA,Ahmet Parhat","Current conduction and stability of CeO2/La2O3 stacked gate dielectric",,"APPLIED PHYSICS LETTERS",,"Vol. 101",,"  233507",2012,Dec.
"B.L. Yang,H Wong,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Improving the electrical characteristics of MOS transistors with CeO2/ La2O3 stacked gate dielectric",,"Microelectronics Realiability",,"Vol. 52",,"pp. 1613-1616",2012,Aug.
"S.-L. Siu,W.-S. Tam,H Wong,C.-W. Kok,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors",,"Microelectronics Realiability",,"Vol. 52",,"pp. 1606-1609",2012,Aug.
"H Wong,B.L. Yang,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI","Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics",,"Vacuum",,"Vol. 86","No. 7","pp. 990-993",2012,Feb.
"H Wong,B.L. Yang,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI","Effects of aluminum doping on lanthanum oxide gate dielectric films",,"Vacuum",,"Vol. 86","No. 7","pp. 929-932",2012,Feb.
"B Sen,H Wong,B.L. Yang,P.K. Chu,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation",,"Solid-State Electronics",,"Vol. 53",,"pp. 355-358",2009,