"K. Tsutsui,M. Watanabe,Y. Nakagawa,T. Matsuda,Y. Yoshida,E. Ikenaga,K. Kakushima,P. Ahmet,H. Nohira,T. Maruizumi,A. Ogura,T. Hattori,H. Iwai","New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-Ray Photoelectron Spectroscopy","the 38th European Solid-State Device Research Conference (ESSDERC2008)",,,,,,2008,Sept.
"KAZUO TSUTSUI,T Matsuda,M Watanabe,Cheng-Guo Jin,���X�ؗY��N,Bunji Mizuno,E Ikenaga,Kuniyuki KAKUSHIMA,Ahmet Parhat,T Maruizumi,Hiroshi Nohira,takeo hattori,HIROSHI IWAI","Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements",,"Journal of Applied Physics",,"Vol. 104",,"  093709",2008,