""Y. Wu","H. Hasegawa","K. Kakushima","K. Ohmori","T. Watanabe","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","Y. Kataoka","K. Natori","K. Yamada","H. Iwai"","A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability",,"Microelectronics Reliability",,"Vol. 54","No. 5","pp. 899-904",2014,May
"Wu Yan","A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface",,,,,,,2014,Mar.
"呉研","ショットキー及びヘテロシリサイド・シリコン接合トンネルFETのプロセス及び構造因子に関する研究",,,,,,,2014,Mar.
"Wu Yan","A Study on Process and Device Structure for Schottky and Heterojunction Tunnel FETs using Silicide-Silicon interface",,,,,,,2014,Mar.
"H. Hasegawa,Y.Wu,J.Song,K. Kakushima,Y.Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.