"Kiyohisa Funamizu,Y.C. Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,E.Y. Chang,takeo hattori,HIROSHI IWAI","Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 265-270",2009,Oct.