"Kiyohisa Funamizu,Takashi Kanda,Y.C.Lin,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,���R��,Nobuyuki Sugii,E.Y.Chang,KENJI NATORI,takeo hattori,HIROSHI IWAI","Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.