"T. Ohashi,K. Suda,S. Ishihara,N. Sawamoto,S. Yamaguchi,K. Matsuura,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai,A. Ogura,H. Wakabayashi","Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs",,"Japan Journal of Applied Physics",,"Vol. 54","No. 4S",,2015,Mar.
""Mokh Hadi","Shinichi Kano","Kuniyuki Kakushima","Yoshinori Kataoka","Akira Nishiyama","Nobuyuki Sugii","Hitoshi Wakabayashi","Kazuo Tsutsui","Kenji Natori","Hiroshi Iwai"","A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer",,"Semiconductor Science and Technology",,"Vol. 29","No. 11",,2014,Oct.
"T. Shoji,K. Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Effect of Surface Potential Control and Interface States for Silicon Nanowire Solar Cells","29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014)",,,,,,2014,Sept.
""Y. Wu","H. Hasegawa","K. Kakushima","K. Ohmori","T. Watanabe","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","Y. Kataoka","K. Natori","K. Yamada","H. Iwai"","A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability",,"Microelectronics Reliability",,"Vol. 54","No. 5","pp. 899-904",2014,May
""Chunmeng Dou","Tomoya Shoji","Kazuhiro Nakajima","Kuniyuki Kakushima","Parhat Ahmet","Yoshinori Kataoka","Akira Nishiyama","Nobuyuki Sugii","Hitoshi Wakabayashi","Kazuo Tsutsui","Kenji Natori","Hiroshi Iwai"","Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement",,"Microelectronics Reliability",,"Vol. 54",,"pp. 725-729",2014,Apr.
"M. Motoki,K. Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H.Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Effect of Annealing Temperature on Sheet Resistance of Ni Germanide Formed by Multi-Layered Ni and Ge Films","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39, Yokohama",,,,,,2014,Feb.
"T. Kato,T.Inamura,A.Sasaki,K.Aoki,K.Kakushima,Y.Kataoka,A. Nishiyama,N. Sugii,H.Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Thickness-dependent electrical characterization of β‐FeSi2","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Y. Ito,H. Hori,K. Tsutsui,K. Kakushima,H. Wakabayashi,Y.Kataoka,A.Nishiyama,N. Sugii,K. Natori,H. Iwai","Proposal of junction formation process for solar cells made of silicon microstructures","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"Y. Nakamura,K. Kakushima,Y. Kataoka,A. Nishiyama,H. Wakabayashi,N. Sugii,K. Tsutsui,K. Natori,H. Iwai","Measurement of flat-band voltage shift using multi-stacked dielectric film","The Workshop on Future Trend of Nanoelectronics: WIMNACT",,,,,,2014,Feb.
""T. Kawanago","K. Kakushima","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","H. Iwai"","Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT",,"IEEE Transaction on Electron Devices(T-ED)",,"Vol. 61","No. 3","pp. 785-791",2014,Feb.
"Chunmeng Dou,Kakushima,Y. Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Determination of oxide traps distribution in high-k/InGaAs MOS capacitor by capacitance-voltage measurement","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"T. Ohashi,H. Wakabayashi,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai","Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
"H. Hasegawa,Y.Wu,J.Song,K. Kakushima,Y.Kataoka,A. Nishiyama,N. Sugii,H. Wakabayashi,K. Tsutsui,K. Natori,H. Iwai","Improvement of tunnel FET performance using narrow bandgap semiconductor silicide /Si hetero-structure source electrod","The Workshop on Future Trend of Nanoelectronics: WIMNACT 39",,,,,,2014,Feb.
""K. Tuokedaerhan","K. Kakushima","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","H. Iwai"","Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain",,"Applied Physics Letters (APL)",,"Vol. 104","No. 2",,2014,Jan.
"Shuhei Hosoda,Kamale Tuokedaerhan,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,Kenji Natori,takeo hattori,HIROSHI IWAI","Atomically flat interface of La-silicate/Si with W2C gate electrodes","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"wei li,佐々木亮人,大図秀行,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Resistivity Measurement of Monoclinic Thin Tungsten Oxide Film Due to Annealing Processesn","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"K. Tuokedaerhan,Shuhei Hosoda,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39","K. Tuokedaerhan, S. Hosoda, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Mobility Improvement of La-silicate MOSFET by W2C Gate Electrode”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,2014,
"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,片岡好則,Kenji Natori,HIROSHI IWAI","Influence of structure parameter on Mg2Si-Si Hetero-junction Tunneling FET","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"unknown unknown,竇春萌,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A study on Resistive Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode with CeOx Buffer Layer","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"DARYOUSH ZADEH,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Low DitHigh-k/In0.53Ga0.47As Gate Stack with CET down to 0.73 nm and Thermally Stable Silicide Contact by Suppression of Interfacial Reaction","IEDM 2013",,,,,,2014,
"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,大毛利健治,T. Watanabe,Hitoshi Wakabayashi,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,片岡好則,Kenji Natori,Keisaku Yamada,HIROSHI IWAI","Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance","2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-",,,,,,2014,
"K. Tuokedaerhan,Shuhei Hosoda,Yoshinori Nakamura,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Influence of Carbon Incorporation in W Gate Electrode for La-silicate Gate Dielectrics","2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY",,,,,,2014,
"T. Ohashi,K. Suda,S. Ishihara,N. Sawamoto,S. Yamaguchi,K. Matsuura,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai,A. Ogura,Hitoshi Wakabayashi","Multi-Layered MoS2 Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs","International Conference on Solid State Devices and Materials","Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials",,,,"  1074",2014,
"伊藤勇磨,堀隼人,筒井一生,角嶋邦之,若林整,片岡好則,西山彰,杉井信之,名取研二,岩井洋","微細Si構造を利用した太陽電池に適した接合プロセスの提案","第61回応用物理学会春季学術講演会",,,,,,2014,
"堀隼人,伊藤勇磨,筒井一生,角嶋邦之,若林整,片岡好則,西山彰,杉井信之,名取研二,岩井洋","薄膜SOI太陽電池の発電特性への基板バイアス効果","第61回応用物理学会春季学術講演会",,,,,,2014,
"松川佳弘,岡本真里,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,齋藤渉","AlGaN/GaN上のTi/C/TiN電極のコンタクト抵抗：Ti/C膜厚及び比率依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"雷 一鳴,宗清修,角嶋邦之,川那子高暢,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,古橋 壮之,三浦 成久,山川 聡","ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析","第61回応用物理学会春季学術講演会",,,,,,2014,
"劉 璞誠,竇春萌,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","コンダクタンス法によるAlGaN/GaNヘテロ接合界面トラップに関する研究","第61回応用物理学会春季学術講演会",,,,,,2014,
"譚錫昊,川那子高暢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究","第61回応用物理学会春季学術講演会",,,,,,2014,
"元木雅章,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","NiとGe積層薄膜によって形成したNiGe膜のシート抵抗と熱処理温度の関係","第61回応用物理学会春季学術講演会（2014年3月17日?3月20日）",,,,,,2014,
"長谷川明紀,呉研,宋 ?漢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Mg/Si極薄膜積層の熱処理を用いて作製したMg2Siの赤外線吸収特性評価","第61回応用物理学会春季学術講演会",,,,,,2014,
"小路智也,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Siナノワイヤー曲面における保護膜界面準位密度の研究","第61回応用物理学会春季学術講演会",,,,,,2014,
"岡本真里,松川佳弘,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,大橋弘通,岩井洋,齋藤渉","TiB2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化","第61回応用物理学会春季学術講演会",,,,,,2014,
"今村浩章,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","積層シリサイド化スパッタプロセスにより作成したNiシリサイドショットキーダイオードの評価","第61回応用物理学会春季学術講演会",,,,,,2014,
"吉原亮,元木雅章,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Pを導入したNiSi2/n-Geコンタクトの電気特性と不純物拡散の様子","第61回応用物理学会春季学術講演会",,,,,,2014,
"細田修平,Tuokedaerhan Kamale,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","W2C電極導入によるLa-silicate/Siにおける平坦な界面の実現","第61回応用物理学会春季学術講演会",,,,,,2014,
"関拓也,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Si(110),(111)基盤上で熱処理による界面反応で形成したLa-silicateゲート絶縁膜の物理的理解に関する研究","第61回応用物理学会春季学術講演会",,,,,,2014,
"大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,西山彰,杉井信之,片岡好則,若林整,筒井一生,名取研二,岩井洋","La2O３/ InGaAs界面ラフネスに及ぼすALDプロセスの影響","第61回応用物理学会春季学術講演会",,,,,,2014,
"稲村太一,嘉藤貴史,佐々木亮人,青木克明,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","β-FeSi2の抵抗率熱処理依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"LiWei,佐々木亮人,大図 秀行,青木克明,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","単斜晶WO3薄膜抵抗率の熱処理依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"陳江寧,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,齋藤渉","La2O３ゲート絶縁膜を用いたAlGaN/GaNデバイスのプロセス依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"呉研,長谷川明紀,角嶋邦之,渡辺  孝信,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Mg2Si-Siヘテロ接合トンネルFET特性の構造依存性","第61回応用物理学会春季学術講演会",,,,,,2014,
"Tuokedaerhan Kamale,Shuhei Hosoda,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","W2Cゲート電極によるLa-silicate MOSFETの移動度改善","第61回応用物理学会春季学術講演会",,,,,,2014,
"ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,大嶺洋,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","低界面準位とsub-nm CETを有するLa2O３/ In0.53Ga0.47Asゲートスタックの実現","第61回応用物理学会春季学術講演会",,,,,,2014,
"小路智也,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","立体Si構造における局所的な界面準位密度の抽出","ゲートスタック研究会 ―材料・プロセス・評価の物理―（第19回研究会）",,,,,,2014,
"Atsushi Takemasa,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characteristics of n-type diamond contacts with Ti, Ni, NiSi2 and Ni3P electrodes","China Semiconductor Technology International Conference (CSTIC) 2014",,,,,,2014,
"Takumi Ohashi,Hitoshi Wakabayashi,Kuniyuki KAKUSHIMA,Nobuyuki Sugii,Akira Nishiyama,Yoshinori Kataoka,Kenji Natori,KAZUO TSUTSUI,HIROSHI IWAI","Performance Prediction on n-MOSFET using Single-Layer MoS2 Channel","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Hayato Hori,Yuuma Itou,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI","Effects of substrate back bias on solar cells formed on thin SOI structures","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Yuuma Itou,Hayato Hori,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI","Schottky barrier height reduction process for silicide/Si interfaces","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Yoshihiro Matsukawa,Mari Okamoto,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","An Ohmic Contact Process for AlGaN/GaN Structures using TiCElectrode","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Takafumi Katou,Taichi Inamura,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characteristic of b-FeSi2","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"雷 一鳴,Shu Munekiyo,Kuniyuki KAKUSHIMA,Takamasa Kawanago,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,M. Furuhashi,N. Miura,S. Yamakawa","Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,,2014,
"Masaaki Motoki,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Dependence between Sheet Resistance and Annealing Temperature of Ni Germanide Formed by Multi-Layered Ni and Ge Films","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Hiroki Hasegawa,Y. Wu,宋 ?漢,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Tomoya Shoji,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Silicon Nanowire Solar Cells: Surface Passivation and Interface Analysis","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Hiroaki Imamura,Taichi Inamura,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Characterization of Thin NiSi2 Films by Stacked Silicidation Sputtering Process with Kr Gas","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"宋 ?漢,Kazuki Matsumoto,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films","J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai, “Reduction of the resistivities of Ni Silicide formed by the reaction of Si nanowire and Ni thin films”, The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,,2014,
"吉原亮,Masaaki Motoki,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Interface control process toward un-pinned metal/germanium Schottky contact","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Atsushi Takemasa,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characteristics of Ti, Ni, NiSi2 and Ni3P/n-diamond contacts","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"関拓也,Kuniyuki KAKUSHIMA,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Physical understanding of La-silicate gate dielectrics thermally formed by interface reaction on Si(110) and (111)","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Hiroshi Oomine,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,Akira Nishiyama,Nobuyuki Sugii,片岡好則,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Effect of pretreatment for high-/k//InGaAs interface property","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Taichi Inamura,Takafumi Katou,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A study on silicide semiconductors for high efficiency thin film photovoltaic devices","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Jiangning Chen,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,齋藤渉","Electrical characteristics of AlGaN/GaN HEMT with La2O3 gate dielectricsn","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,
"Taichi Inamura,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A stacked sputtered process for β-FeSi2 formation","ECS 224nd Meeting","ECS Transactions",,,,,2013,Oct.
"Taichi Inamura,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A stacked sputtered process for β-FeSi2 formation","ECS 224nd Meeting","ECS Transactions",,,,,2013,Oct.
"Shuhei Hosoda,Kamale Tuokedaerhan,Kuniyuki Kakushima,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kenji Natori,Hiroshi Iwai","Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode","224th ECS Meeting in San Francisco",,,,,,2013,Oct.
"Hiroshi Oomine,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 385-389",2013,Oct.
"宋 ?漢,Kazuki Matsumoto,Kuniyuki KAKUSHIMA,片岡好則,西山彰,杉井信之,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 87-91",2013,Oct.
"Shuhei Hosoda,K. Tuokedaerhan,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 61-64",2013,Oct.
""K. Tuokedaerhan","R. Tan,K. Kakushima","P. Ahmet","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","T. Hattori","H. Iwai"","Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application",,"Applied Physics Letters (APL)",,"Vol. 103",,,2013,Sept.
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,takeo hattori,Kenji Natori,HIROSHI IWAI","Comparative study of electrical characteristics in(100) and (110)surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure",,"Solid-State Electronics",,"Vol. 84",,"pp. 53-57",2013,June
"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Hiroshi Nohira,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,"Solid-State Electronics",,"Vol. 82",,"pp. 29-33",2013,Apr.
"Y. Wu,竇春萌,F. Wei,Kuniyuki KAKUSHIMA,大毛利健治,パールハットアヘメト,T. Watanabe,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Keisaku Yamada,片岡好則,takeo hattori,HIROSHI IWAI","Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability",,"Japanese Journal of Applied Physics",,"Vol. 52","No. 4S","pp. 04CC28-1-04CC28-5",2013,Apr.
"T. Seki,T. Kawanago,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Electrical and Infrared Absorption Studies on La-silicate/Si Interface","IEEE 2nd Int. Symp. on Next Generation Electronics (ISNE 2013)",,,,,,2013,Feb.
"Jiangning Chen,鹿 国強,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"shinichi kano,竇春萌,unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Transient Switching Characteristics of Ce-oxide Resistive Switching Devices","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"田中祐樹,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface controlled metal contact for n-type diamonds","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yuta Tamura,吉原亮,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Stacked Ni-Silicidation Process for Schottky Barrier FET","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Kana Tsuneishi,Jiangning Chen,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A Robust Ohmic Contact Process for AlGaN/GaN using Ti-silicide electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Michihiro Hosoda,Kuniyuki KAKUSHIMA,Kenji Natori,S. Yamasaki,H. Ohashi,HIROSHI IWAI","Carrier transport modeling in diamonds","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Size dependent resistivity change of Ni-silicides in nano-region","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yang Zhao,マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Separation of bulk and interface traps of La-silicate on Si(100) surface","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yang Zhao,マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Separation of bulk and interface traps of La-silicate on Si(100) surface","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Yang Zhao,マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Separation of bulk and interface traps of La-silicate on Si(100) surface","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Taichi Inamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Formation of Fe-silicides using Multi-Stacking Sputtering Process","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Taichi Inamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Formation of Fe-silicides using Multi-Stacking Sputtering Process","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"関拓也,Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Infrared absorption study of La-silicate gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Atsushi Takemasa,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of Surface Treatments for Metal Contact on p-type Diamonds","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Shuhei Hosoda,K. Tuokedaerhan,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Improvenents in interface, states with W-carbide metal gate for La2O3/si MOS Capacitor","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A Novel Ohmic Contact Process for n-Ge Substrates","R. Yoshihara, Y. Tamura, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “A Novel Ohmic Contact Process for n-Ge Substrates”, Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Mari Okamoto,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Extraction of Energy Band Diagram of AlGaN/GaN with SiO2 Capped Annealing using X-ray Photoelectron Spectroscopy","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37), February 18, 2013, , Japan",,,,,,2013,
"関拓也,Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","International Symposium on Next-Generation Electronics(ISNE 2013)","International Symposium on Next-Generation Electronics(ISNE 2013)",,,,,,2013,
"Michihiro Hosoda,Kuniyuki KAKUSHIMA,Kenji Natori,S. Yamasaki,H. Ohashi,HIROSHI IWAI","On the electron conduction in n-diamond","International Symposium on Next-Generation Electronics(ISNE 2013)",,,,,,2013,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Analyses of Nickel Silicide Formed on Si Nanowires with 10-nm-width","International Symposium on Next-Generation Electronics(ISNE 2013)",,,,,,2013,
"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,,,,,,2013,
"Wei Li,中島一裕,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Extraction of Interface State Density of 3-dimensional Si channel","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface properties of La-silicate gate dielectrics on Si(110)surface","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT","ESSDERC 2013",,,,,,2013,
"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"石川昂,小路智也,角嶋邦之,若林整,片岡好則,西山彰,杉井信之,筒井一生,名取研二,岩井洋","チャージポンピング法を用いた三次元Si構造の界面準位密度測定","第74回応用物理学会秋季学術講演会",,,,,,2013,
"大橋匠,若林整,角嶋邦之,杉井信之,西山彰,片岡好則,名取研二,筒井一生,岩井洋","単層MoS2チャネルを用いたn-MOSFETの性能見積もり","[第74回応用物理学会秋季学術講演会",,,,,,2013,
"松川佳弘,岡本真里,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,齋藤渉","AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"嘉藤貴史,稲村太一,佐々木 亮人,青木 克明,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究","第74回応用物理学会秋季学術講演会",,,,,,2013,
"劉 璞誠,米澤宏昭,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","AlGaNのドライエッチングへのBcl3の影響に関する研究","第74回応用物理学会秋季学術講演会",,,,,,2013,
"譚錫昊,岡本真里,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"元木雅章,吉原亮,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"宗清修,川那子高暢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,
"長谷川明紀,呉研,宋 ?漢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上","第74回応用物理学会秋季学術講演会",,,,,,2013,
"中村嘉基,細田修平,Tuokedaerhan Kamale,角嶋邦之,片岡好則,西山彰,若林整,杉井信之,筒井一生,名取研二,岩井洋","W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価","第74回応用物理学会秋季学術講演会",,,,,,2013,
"小路智也,石川昂,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定","第74回応用物理学会秋季学術講演会",,,,,,2013,
"岡本真里,松川佳弘,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化","第74回応用物理学会秋季学術講演会",,,,,,2013,
"今村浩章,稲村太一,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価","第74回応用物理学会秋季学術講演会",,,,,,2013,
"鹿国強,大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,西山彰,杉井信之,片岡好則,若林整,筒井一生,名取研二,岩井洋","ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,
"宋 ?漢,松本一輝,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,服部健雄,岩井洋","Niシリサイドナノワイヤ抵抗率のNi膜厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"K. Tuokedaerhan,Shuhei Hosoda,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Work Function Extraction of W,Ta and Ti Carbides Formed by Multi Stacked Process","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive Switching Device using Ce-oxide with Ni-silicide Electrodes","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface properties of La-silicate gate dielectrics on Si(110)surface","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,鹿 国強,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"shinichi kano,竇春萌,unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,片岡好則,Kenji Natori,Miranda Enrique,takeo hattori,HIROSHI IWAI","Influence electrode materials on CeOx based resistive switching","CSTIC 2012",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Ryuji Hosoi,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation","15th International Conference on Thin Films",,,,,,2013,
"Takamasa Kawanago,Yeonghun Lee,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure","15th International Conference on Thin Films",,,,,,2013,
"Yuta Tamura,吉原亮,Kuniyuki KAKUSHIMA,中塚理,パールハットアヘメト,Hiroshi Nohira,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si(100)","15th International Conference on Thin Films",,,,,,2013,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"中島一裕,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Dependence of Interface-State Density on Three Dimensional Silicon Structure Measured by Charge-Pumping Method","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 293-298",2013,
"Tasuku Kaneda,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Influence of Flash Lamp Annealing on Electrical Characteristics of MOS Device with Si/ La2O3/n-Si Structure","ECS 220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 157-164",2013,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characterization of atomically flat NiSi2 Schottky diode","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Kazuki Matsumoto,小山将央,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si fin and nanowire structures","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Michihiro Hosoda,Yeonghun Lee,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Size dependent phonon limited electron mobility of Si nanowire","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Yuta Tamura,吉原亮,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel Ni silicidation technology for Schottky diode formation","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"田中祐樹,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"shinichi kano,竇春萌,unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive switching properties of Ce oxides","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Ryuji Hosoi,Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"中島一裕,Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"中島一裕,Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"来山大祐,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","[Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"K.Tuokedaerhan,金田翼,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of annealing ambient for La2O3/Si capacitor","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","An analytical model of a tunnel FET with Schottky junction","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"DARYOUSH ZADEH,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of metal Schottky junction for InGaAs substrate","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"unknown unknown,A. Ablimit,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electron transport in ballistic diodes: influence of phonon generation in drain region","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"マイマイティ マイマイティレャアティ,関拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Takamasa Kawanago,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET","41st European Solid-State Device Research Conference",,,,,,2013,
"Jiangning Chen,鹿 国強,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Y. Tanaka,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,S. Yamasaki,H. Iwai","TiC Electrode Formed by Multi-Stacking Process for Diamond Contact Metal","PRiME 2012",,,,,,2012,Oct.
"T. Kamale,R. Tan,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","PRiME 2012",,,,,,2012,Oct.
"Takamasa Kawanago,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs",,"Solid-State Electronics",,"Vol. 74",,"pp. 2-6",2012,Aug.
"マイマイティ マイマイティレャアティ,久保田透,関拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,片岡好則,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors",,"Microelectronics Reliability",,"Vol. 52","No. 6","pp. 1039-1042",2012,June
"unknown unknown,W. Yasenjiang,Kuniyuki KAKUSHIMA,Ahmet Parhat,M. Geni,Kenji Natori,HIROSHI IWAI","Influence of strained drain on performance of ballistic channel devices",,"Semiconductor Science and Technology",,"Vol. 27","No. 5","pp. 055001-1-5",2012,May
"C. Dou,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer",,"Microelectronics Reliability",,"Vol. 32","No. 4","pp. 688-691",2012,Apr.
"Yeonghun Lee,Kuniyuki KAKUSHIMA,Kenji Natori,HIROSHI IWAI","Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs",,"IEEE Transactions on Electron Deviices",,"Vol. 59","No. 4","pp. 1037-1045",2012,Apr.
"S. Kano,C. Dou,M. Hadi,K. Kakushima,P. Ahmet,A. Nishiyama,N. Sugii,K. Tsutsui,Y. Kataoka,K. Natori,E. Miranda,T. Hattori,H. Iwai","Influence of Electrode Material for CaOx Based Resistive Switching","China Semiconductor Technology International Conference (CSTIC)",,,,,,2012,Mar.
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"DARYOUSH ZADEH,Ryuji Hosoi,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Characterization and improvement of high-k/InGaAs devices","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Yeonghun Lee,Kuniyuki KAKUSHIMA,Kenji Natori,HIROSHI IWAI","Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Influence of Heat Generation within Drain Region on Transport of Hot Electrons","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"マイマイティ マイマイティレャアティ,関拓也,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of oxide traps in La based oxides for direct high-k/Si capacitor","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Nitrogen incorporated La-silicate gate dielectric with high scalability","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"T. Kawanago,K. Kakushima,P. Ahmet,Y. Kataoka,A. Nishiyama,N. Sugii,K. Tsutsui,K. Natori,T. Hattori,H. Iwai","(100)- and (110)-Oriented nMOSFETs with Highly Scaled EOT in La-Silicate/Si Interface for Multi-Gate Architecture","42nd European Solid-State Device Research Conference (ESSDERC 2012)",,,,,,2012,
"K. Tuokedaerhan,Tasuku Kaneda,マイマイティ マイマイティレャアティ,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of Annealing Ambient for La2O3/Si Capacitor","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by conductance method","Interface state density measurements of 3D silicon channel by conductance method",,,,,,2012,
"Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","An analytical model of a tunnel FET with Schottky junction","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI,takeo hattori","Si nanowire FET with asymmetric channel","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Jiangning Chen,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure","ECS 222nd Meeting, ECS Transactions, Vol.50, No.3, pp., October 11, 2012,","ECS Transactions",,"Vol. 50","No. 3","pp. 447-450",2012,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,
"Jiangning Chen,Kana Tsuneishi,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 3","pp. 353-357",2012,
"Tohtarhan Kamal,R. Tan,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Properties of La-silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 281-284",2012,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Thermally stable NiSi2 for Ge contact with Schottky barrirer height modulation capability","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 9","pp. 217-221",2012,
"Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 145-150",2012,
"Yuta Tamura,吉原亮,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A Proposal of Schottky Barrire Height Tuning Method with Interface Controlled Ni/Si Stacked Silicidation Process","ECS 222nd Meeting","ECS Transactions",,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture","ESSDERC 2012",,,,,,2012,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture","ESSDERC 2012",,,,,,2012,
"Wei Li,中島一裕,竇春萌,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,片岡好則,Kenji Natori,takeo hattori,HIROSHI IWAI","Evaluation of Interfacial State Density of MOS Capacitor with Three-Dimensional Channel by Conductance Method","CSTIC 2012",,,,,,2012,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates","CSTIC 2012",,,,,,2012,
"吉原亮,Yuta Tamura,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characterization of atomically flat NiSi2 Schottky diode”, Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kana Tsuneishi,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical properties of Tm2O3 gate dielectric and its scaling issues","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Michihiro Hosoda,Yeonghun Lee,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,HIROSHI IWAI","Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kazuki Matsumoto,小山将央,Y. Wu,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Ni silicidation for Si Fin and nanowire strucures","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"田中祐樹,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Y. Tanaka, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai, “Impact of annealing on structural change in amorphous carbon: effect of Fe catalyst","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"shinichi kano,竇春萌,unknown unknown,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of metal electrode material on resistive swirching properties of Ce oxides","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"中島一裕,Wei Li,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface state density measurements of 3D silicon channel by charge pumping method","[550]	K. Nakajima, W. Li, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Interface state density measurements of 3D silicon channel by charge pumping method”, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Daisuke Kitayama,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of Silicate Formation at Metal Gate/High-k Interface on Electrical Characteristics of La2O3 gated MOS Devices","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Properties of Rare-Earth oxides and La2O3 Stacked Gate Dielectrics","ECS  220th Meeting,ECS Transactions","ECS Transactions",,"Vol. 41","No. 7","pp. 119-124",2011,
"竇春萌,Soshi Sato,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Si nanowire FET with asymmetric channel","Tsukuba Nanotechnology Symposium(TNS’11)",,,,,,2011,
"D. Kitayama,T. Koyanagi,K. Kakushima,P. Ahmet,K. Tsutsui,A. Nishiyama,N. Sugii,K. Natori,T. Hattori,H. Iwai","TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT","218th ECS Meeting",,,,,,2010,Oct.