"Y. Wu,Hiroki Hasegawa,Kuniyuki KAKUSHIMA,‘å–Ñ—˜Œ’Ž¡,T. Watanabe,Hitoshi Wakabayashi,KAZUO TSUTSUI,�¼ŽR�²,Nobuyuki Sugii,•Ð‰ª�D‘¥,Kenji Natori,Keisaku Yamada,HIROSHI IWAI","Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance","2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCINCE AND TECHNOLOGY-",,,,,,2014,
"Y. Wu,â…�t–G,F. Wei,Kuniyuki KAKUSHIMA,‘å–Ñ—˜Œ’Ž¡,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,T. Watanabe,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Keisaku Yamada,•Ð‰ª�D‘¥,takeo hattori,HIROSHI IWAI","Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability",,"Japanese Journal of Applied Physics",,"Vol. 52","No. 4S","pp. 04CC28-1-04CC28-5",2013,Apr.
"‘v  ?Š¿,�¬ŽR�«‰›,Kazuki Matsumoto,Kuniyuki KAKUSHIMA,’†’Ë—�,‘å–Ñ—˜Œ’Ž¡,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Keisaku Yamada,HIROSHI IWAI","Atomically flat Ni-silicide/Si interface using NiSi2 sputtering","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"�¬ŽR�«‰›,Naoto Shigemori,Kenji Ozawa,Kiichi Tachi,Kuniyuki KAKUSHIMA,O. Nakatsuka,‘å–Ñ—˜Œ’Ž¡,KAZUO TSUTSUI,�¼ŽR�²,Nobuyuki Sugii,Keisaku Yamada,HIROSHI IWAI","Si/Ni-Silicide Schottky Junctions with Atomically Flat Interfaces Using NiSi2 Source","41st European Solid-State Device Research Conference",,,,,,2013,
"‘å–Ñ—˜Œ’Ž¡,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"‘å–Ñ—˜Œ’Ž¡,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"‘å–Ñ—˜Œ’Ž¡,W. Feng,R. Hettiarachchi,Yeonghun Lee,Soshi Sato,Kuniyuki KAKUSHIMA,M. Sato,K. Fukuda,M. Niwa,K. Yamabe,Kenji Shiraishi,HIROSHI IWAI,Keisaku Yamada","Low-frequency noise reduction in Si Nanowire MOSFETs","ECS 221st Meeting","ECS Transactions",,"Vol. 45","No. 3","pp. 437-442",2012,
"ŸNˆä—uŽq,‘å–Ñ—˜Œ’Ž¡,Keisaku Yamada,Kuniyuki KAKUSHIMA,T. Tayagaki,HIROSHI IWAI,Y. Kanemitsu,K. Asakawa,Kenji Shiraishi,S. Nomura","Photoluminescence Properties of Si Nanolayers and Si Nanowires","Tsukuba Nanotechnology Symposium 2012(TNS�f12)",,,,,,2012,
"�²“¡‘nŽu,Šp“ˆ–M”V,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,‘å–Ñ—˜Œ’Ž¡,–¼ŽæŒ¤“ñ,ŽR“cŒ[�ì,Šâˆä—m","Effects of corners of channel cross-section on electrical performance of silicon nanowire field-effect transistors","ƒQ�[ƒgƒXƒ^ƒbƒNŒ¤‹†‰ï?�Þ—¿¥ƒvƒ�ƒZƒX�E•]‰¿‚Ì•¨—�?�i‘æ16‰ñŒ¤‹†‰ï�j",,,,,,2011,
"Y. Wu,Kuniyuki KAKUSHIMA,‘å–Ñ—˜Œ’Ž¡,Akira Nishiyama,HIROSHI IWAI,Keisaku Yamada","A Study on Fabrication and Analytic Modeling of novel Schottky contact tunneling Transistors","Tsukuba Nanotechnology Symposium(TNS�f11)",,,,,,2011,
"ŸNˆä —uŽq,‘å–Ñ—˜Œ’Ž¡,Keisaku Yamada,Kenji Shiraishi,Kuniyuki KAKUSHIMA,HIROSHI IWAI,S. Nomura","Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires","ECS 220th Meeting",,,,,,2011,
"�²“¡‘nŽu,�Vˆä‰p˜N,Šp“ˆ–M”V,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,‘å–Ñ—˜ Œ’Ž¡,–¼ŽæŒ¤“ñ,Šâˆä—m,ŽR“cŒ[�ì","Siƒiƒmƒ�ƒCƒ„ƒgƒ‰ƒ“ƒWƒXƒ^‚Ì“d‹C“Á�«‚Ì’f–ÊŒ`�óˆË‘¶�Ç","‘æ57‰ñ‰ž—p•¨—�ŠwŠÖŒW˜A�‡�u‰‰‰ï","‘æ57‰ñ‰ž—p•¨—�ŠwŠÖŒW˜A�‡�u‰‰‰ï�u‰‰—\�e�W",,,,"pp. 13-270",2010,Apr.